ZHCSH42A November   2017  – January 2021 BQ25122

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Ship Mode
        1. 9.3.1.1 Ship Mode Entry and Exit
      2. 9.3.2  High Impedance Mode
      3. 9.3.3  Active Battery Only Connected
      4. 9.3.4  Voltage Based Battery Monitor
      5. 9.3.5  Sleep Mode
      6. 9.3.6  Input Voltage Based Dynamic Power Management (VIN(DPM))
      7. 9.3.7  Input Overvoltage Protection and Undervoltage Status Indication
      8. 9.3.8  Battery Charging Process and Charge Profile
      9. 9.3.9  Dynamic Power Path Management Mode
      10. 9.3.10 Battery Supplement Mode
      11. 9.3.11 Default Mode
      12. 9.3.12 Termination and Pre-Charge Current Programming by External Components (IPRETERM)
      13. 9.3.13 Input Current Limit Programming by External Components (ILIM)
      14. 9.3.14 Charge Current Programming by External Components (ISET)
      15. 9.3.15 Safety Timer and Watchdog Timer
      16. 9.3.16 External NTC Monitoring (TS)
      17. 9.3.17 Thermal Protection
      18. 9.3.18 Typical Application Power Dissipation
      19. 9.3.19 Status Indicators ( PG and INT)
      20. 9.3.20 Chip Disable ( CD)
      21. 9.3.21 Buck (PWM) Output
      22. 9.3.22 Load Switch / LDO Output and Control
      23. 9.3.23 Manual Reset Timer and Reset Output ( MR and RESET)
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Serial Interface Description
      2. 9.5.2 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1  Status and Ship Mode Control Register
      2. 9.6.2  Faults and Faults Mask Register
      3. 9.6.3  TS Control and Faults Masks Register
      4. 9.6.4  Fast Charge Control Register
      5. 9.6.5  Termination/Pre-Charge
      6. 9.6.6  Battery Voltage Control Register
      7. 9.6.7  SYS VOUT Control Register
      8. 9.6.8  Load Switch and LDO Control Register
      9. 9.6.9  Push-Button Control Register
      10. 9.6.10 ILIM and Battery UVLO Control Register
      11. 9.6.11 Voltage Based Battery Monitor Register
      12. 9.6.12 VIN_DPM and Timers Register
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Default Settings
        2. 10.2.2.2 Choose the Correct Inductance and Capacitance
        3. 10.2.2.3 Calculations
          1. 10.2.2.3.1 Program the Fast Charge Current (ISET)
          2. 10.2.2.3.2 Program the Input Current Limit (ILIM)
          3. 10.2.2.3.3 Program the Pre-charge/termination Threshold (IPRETERM)
          4. 10.2.2.3.4 TS Resistors (TS)
      3. 10.2.3 Application Performance Curves
        1. 10.2.3.1 Charger Curves
        2. 10.2.3.2 SYS Output Curves
        3. 10.2.3.3 Load Switch and LDO Curves
        4. 10.2.3.4 LS/LDO Output Curves
        5. 10.2.3.5 Timing Waveforms Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方产品免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Voltage Based Battery Monitor Register

Memory location 0x0Ah, Reset State: 0xxx xxxx

Figure 9-21 Voltage Based Battery Monitor Register
7 (MSB)6543210 (LSB)
0xxxxxxx
R/WRRRRRRR
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-23 Voltage Based Battery Monitor Register, Memory Location 1010
BitFieldTypeResetDescription
B7 (MSB)VBMON_READR/W0Write 1 to initiate a new VBATREG reading. Read always 0.
B6VBMON_RANGE_1Rx11 – 90% to 100% of VBATREG
10 – 80% to 90% of VBATREG
01 – 70% to 80% of VBATREG
00 – 60% to 70% of VBATREG
B5VBMON_RANGE_0Rx
B4VBMON_TH_2Rx111 – Above 8% of VBMON_RANGE
110 – Above 6% of VBMON_RANGE
011 – Above 4% of VBMON_RANGE
010 – Above 2% of VBMON_RANGE
001 – Above 0% of VBMON_RANGE
B3VBMON_TH_1Rx
B2VBMON_TH_0Rx
B1RxN/A
B0 (LSB)RxN/A
The VBMON registers are used to determine the battery voltage. Before entering a low power state, the device will determine the voltage level by starting at VBMON_RANGE 11 (90% to 100%), and if VBMON_TH of 000 is read, then it will move to VBMON_RANGE 10 (80% to 90%) and continue until a non 000 value of VBMON_TH is found. If this does not happen, then VBMON_RANGE and VBMON_TH will be written with 00 000. The VBMON_READ bit can be used to initiate a new reading by writing a 1 to it. Example: A reading of 10 011 indicated a VBAT voltage of between 84% and 86% of the VBATREG setting.