ZHCSCP0 July   2014

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 应用电路原理图
  5. 5 修订历史记录
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 Handling Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Overvoltage Protection
      2. 9.3.2 Undervoltage Lockout (UVLO)
      3. 9.3.3 External NTC Monitoring (TS)
      4. 9.3.4 50 mA LDO (LDO)
      5. 9.3.5 Charge Status Indicator (CHG)
      6. 9.3.6 Input Current Limit Control (EN)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Charging Operation
        1. 9.4.1.1 Charger Operation with Minimum System Voltage Mode Enabled
        2. 9.4.1.2 Precharge Mode (V(BAT) ≤ V(LOWV))
        3. 9.4.1.3 Fast Charge Mode
      2. 9.4.2 Programmable Input Current Limit (ISET)
      3. 9.4.3 Thermal Regulation and Thermal Shutdown
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selection of Input and Output Capacitors
        2. 10.2.2.2 Thermal Considerations
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

13 器件和文档支持

13.1 Trademarks

All other trademarks are the property of their respective owners.

13.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.3 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。