ZHCSQM2 May   2022 AMC1333M10

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Timing Diagrams
    12. 6.12 Insulation Characteristics Curves
    13. 6.13 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input
      2. 7.3.2 Modulator
      3. 7.3.3 Isolation Channel Signal Transmission
      4. 7.3.4 Digital Output
        1. 7.3.4.1 Output Behavior in Case of a Full-Scale Input
        2. 7.3.4.2 Output Behavior in Case of a Missing High-Side Supply
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filter Design
        2. 8.2.2.2 Bitstream Filtering
      3. 8.2.3 Application Curve
    3. 8.3 What to Do and What Not to Do
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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6.9 Electrical Characteristics

minimum and maximum specifications apply from TA = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V, INP = –1 V to +1 V, and INN = AGND = 0 V; typical specifications are at TA = 25°C, AVDD = 5 V, DVDD = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
RIN Single-ended input resistance INN = AGND 0.1 2.4 GΩ
RIND Differential input resistance 0.1 3 GΩ
IIB Input bias current INP = INN = AGND,
IIB = (IINP + IINN) / 2		 –10 ±3 10 nA
TCIIB Input bias current temperature drift –7 pA/°C
IIO Input offset current IIO = IINP – IINN –5 ±1 5 nA
CIN Single-ended input capacitance INN = AGND 2 pF
CIND Differential input capacitance 2 pF
CMTI Common-mode transient immunity |AGND – DGND| = 1 kV 100 150 kV/µs
CMRR Common-mode rejection ratio INP = INN, fIN = 0 Hz,
VCM min ≤ VCM ≤ VCM max		 –104 dB
INP = INN, fIN = 10 kHz,
–0.5 V ≤ VIN ≤ 0.5 V		 –89
PSRR Power-supply rejection ratio PSRR vs AVDD, at DC –86 dB
PSRR vs AVDD, 100-mV and
10-kHz ripple		 –86
DC ACCURACY
EO Offset error(1)(2)
INP = INN = AGND, TA = 25°C		 –0.5 ±0.04 0.5 mV
TCEO Offset error temperature drift(3) –4 ±0.6 4 µV/°C
EG Gain error(2) TA = 25°C –0.2% ±0.03% 0.2%
TCEG Gain error temperature drift(4) –40 ±20 40 ppm/°C
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
INL Integral nonlinearity(3) Resolution: 16 bits –5 ±1.6 5 LSB
AC ACCURACY
THD Total harmonic distortion(6) VIN = 2 VPP, fIN = 1 kHz,
single-ended input (AINN = AGND)		 –91 –82 dB
DIGITAL OUTPUT (CMOS)
CLOAD Output load capacitance 15 pF
VOH High-level output voltage IOH = –20 µA DVDD – 0.1 V
IOH = –4 m DVDD – 0.4
VOL Low-level output voltage IOL = 20 µA 0.1 V
IOL = 4 m 0.4
POWER SUPPLY
AVDDUV AVDD undervoltage detection threshold AVDD rising 2.1 2.65 V
AVDD falling 1.95 2.5
DVDDUV DVDD undervoltage detection threshold DVDD rising 2.2 2.45 2.65 V
DVDD falling 1.8 2.2 V
IAVDD High-side supply current 3 V ≤ AVDD ≤ 3.6 V 5.8 7.6 mA
4.5 V ≤ AVDD ≤ 5.5 V 6.4 8.4
IDVDD Low-side supply current 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF		 4 5.1 mA
4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF		 4.4 5.8
(1) This parameter is input referred.
(2) The typical value includes one sigma statistical variation.
(3) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(4) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCEO = (EO,MAX – EO,MIN) / TempRange where EO,MAX and EO,MIN refer to the maximum and minimum EO values measured within the temperature range (–40 to 125℃).
(5) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %) measured within the temperature range (–40 to 125℃).
(6) THD is the ratio of the rms sum of the amplitudes of first five higher harmonics to the amplitude of the fundamental.