Robust Gate Driver Solution for High-Power-Density xEV Chargers using Silicon Carbide (SiC) MOSFETs
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2018 年 9 月 18 日
xEV Chargers can achieve high efficiency and high power density by using SiC MOSFETs. This presentation will cover the SiC MOSFET characteristics, its advantages, and why to use it for xEV chargers. The video will also provide an introduction of TIDA-01604 Design.