UCC21750QDWEVM-025

适用于 SiC 和 IGBT 晶体管及电源模块的驱动和保护评估板

UCC21750QDWEVM-025

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概述

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC21750 in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.

特性
  • 10-A peak, split output drive current with programmable drive voltages
  • Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
  • Short circuit protection using desat signal with soft turn OFF and Miller clamp with internal FET
  • Robust noise-immune solution with CMTI > 100 V/ns

  • Power modules not included

隔离栅极驱动器
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变压器驱动器
SN6505B 适用于隔离电源的低噪声、1A、420kHz 变压器驱动器

 

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TPS709 150-mA, 30-V, ultra-low-IQ, low-dropout voltage regulator with reverse current protection and enable

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评估板

UCC21750QDWEVM-025 – Driving and protection evaluation board for SiC and IGBT transistors and power modules

设计工具

UCC217xxEVM Design Files – SLURAZ2.ZIP (5113KB)

应遵守 TI 的评估模块标准条款与条件.

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