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UCC27212A-Q1

現行

具有 5V UVLO 的車用 4A 120V 半橋閘極驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 7 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 7 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 5 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Dual inputs
HSOIC (DDA) 8 29.4 mm² 4.9 x 6 SOIC (D) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 5V turn-off Under Voltage Lockout (UVLO)
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible Inputs
  • 7V to 17V VDD operating range, (20V ABS maximum)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns typical delay matching
  • Available in the SOIC8 (PowerPAD) package
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • 5V turn-off Under Voltage Lockout (UVLO)
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible Inputs
  • 7V to 17V VDD operating range, (20V ABS maximum)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns typical delay matching
  • Available in the SOIC8 (PowerPAD) package

The UCC27212A-Q1 device driver is based on the popular UCC27211 MOSFET drivers. In addition, UCC27212A-Q1 offers extended operating range all the way down to 5V which helps lower power losses.

The peak output pullup and pulldown current is 3.7A source and 4.5A sink. This allows for the ability to drive large power MOSFETs with minimized switching losses during the e Miller Plateau of the MOSFET.

The input structure can directly handle –10V, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27212A-Q1 (HS pin) can handle –(24V – VDD) maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27212A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low drive voltage is below the specified threshold.

The UCC27212A-Q1 device driver is based on the popular UCC27211 MOSFET drivers. In addition, UCC27212A-Q1 offers extended operating range all the way down to 5V which helps lower power losses.

The peak output pullup and pulldown current is 3.7A source and 4.5A sink. This allows for the ability to drive large power MOSFETs with minimized switching losses during the e Miller Plateau of the MOSFET.

The input structure can directly handle –10V, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27212A-Q1 (HS pin) can handle –(24V – VDD) maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27212A-Q1 has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low drive voltage is below the specified threshold.

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類型 標題 日期
* Data sheet UCC27212A-Q1 Automotive 120V, 3.7A/4.5A Half-Bridge Driver with 5V UVLO datasheet (Rev. A) PDF | HTML 2024年 7月 17日
Functional safety information UCC27200-Q1, UCC2720xA-Q1, and UCC2721xA-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. C) PDF | HTML 2025年 11月 6日
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications PDF | HTML 2025年 7月 31日
Application note Mapping Application Requirements with the 120V Halfbridge Gate Driver PDF | HTML 2025年 4月 4日
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024年 3月 25日
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024年 1月 24日
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023年 9月 8日
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022年 2月 17日
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021年 4月 7日
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 2021年 3月 30日
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020年 5月 12日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019年 10月 22日
Application note Maximizing DC/DC converter designs with UCC27282 2019年 1月 18日
Application note UCC27282 Improving motor drive system robustness 2019年 1月 11日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Application note PFC Design Choice for On Board Charger Designs 2018年 5月 24日
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018年 3月 27日

設計與開發

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開發板

UCC27212EVM-328 — 具有功率級的 UCC27212 評估模組

UCC272XXEVM-328 專為評估 UCC27212DPR 而設計,這是一款具備 3.7-A 源極和 4.5-A 汲極峰值電流能力的半橋閘極驅動器。此 EVM 的目標是依照產品規格書參數評估驅動器 IC 的性能。EVM 也可當成驅動器 IC 元件選擇指南使用。

使用指南: PDF
TI.com 無法提供
開發板

UCC27288EVM — UCC27288 100-V、3-A、8-V UVLO 半橋閘極驅動器評估模組

UCC27288EVM 專為評估 UCC27288D 而設計,這是一款具備 2.5-A 峰值電流源和 3.5-A 峰值汲極電流能力的 100-V 半橋閘極驅動器。此 EVM 可做為驅動功率 MOSFET 的參考設計,驅動電壓高達 20-V。
使用指南: PDF
TI.com 無法提供
模擬型號

UCC27212 PSpice Transient Model

SLUM588.ZIP (39 KB) - PSpice Model
模擬型號

UCC27212 Unencrypted PSpice Transient Model

SLUM587.ZIP (1 KB) - PSpice Model
計算工具

SLURB12 UCC272xx Schematic Review Template

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產品
半橋式驅動器
UCC27200 120V 3A half-bridge gate driver with 8V UVLO and CMOS inputs UCC27200-Q1 Automotive 120V 3A half-bridge gate driver with 8V UVLO and CMOS inputs UCC27200A 120V 3A half-bridge gate driver with 8V UVLO, negative voltage handling, and CMOS inputs UCC27201 120V 3A half-bridge gate driver with 8V UVLO and TTL inputs UCC27201A 120V 3A half-bridge gate driver with 8V UVLO, negative voltage handling, and TTL inputs UCC27201A-DIE 120V 升壓 3A 峰值電流的高頻、高側/低側驅動器 UCC27201A-Q1 具有 8-V UVLO 和負電壓處理功能的汽車 3-A、120-V 半橋式閘極驅動器 UCC27210 具 8-V UVLO 和 CMOS 輸入的 4-A、120-V 半橋閘極驅動器 UCC27211 具 8-V UVLO 和 TTL 輸入的 4-A、120-V 半橋閘極驅動器 UCC27211A 120V 4.5A half-bridge gate driver with 8V UVLO and negative voltage handling UCC27211A-Q1 120V 4.5A half-bridge gate driver with 8V UVLO and negative voltage handling UCC27212 具 5V UVLO 和負電壓處理功能的 4A 120V 半橋式閘極驅動器 UCC27212A-Q1 具有 5V UVLO 的車用 4A 120V 半橋閘極驅動器 UCC27282 120V 3A half-bridge gate driver with 5V UVLO, interlock, and enable options UCC27282-Q1 Automotive 120V 3A half-bridge gate driver with 5V UVLO, interlock, and enable options UCC27284 120V 3A half-bridge gate driver with 5V UVLO and enable options UCC27284-Q1 Automotive 120V 3A half-bridge gate driver with 5V UVLO and enable options UCC27288 120V 3A half-bridge gate driver with 8V UVLO and no internal bootstrap diode UCC27289 120V 3A half-bridge gate driver with 8V UVLO and enable options
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一,涵蓋我們的類比和電源產品組合,以及特定類比行為模型,且使用無需支付費用。

PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前,建立完整的終端設備設計和解決方案原型,進而縮短上市時間並降低開發成本。 

在 PSpice for TI 設計與模擬工具中,您可以搜尋 TI (...)
參考設計

TIDA-01407 — 車用 400W、48V 電池輸入、12V 輸出電源參考設計

此參考設計為車用 400 瓦相移全橋式轉換器,可從 48V 汽車電池產生 12V 輸出。增強型全橋相移式控制器實作可編程延遲,確保在廣泛運作條件下實現零電壓切換 (ZVS)。輸出執行同步整流,可實現快速暫態回應與高迴路頻寬。系統在無負載狀態下可穩定輸出 12V,待機功耗低於 100mW。透過變壓器實現虛擬隔離,以防止 48V 電池對次級側短路。半橋式閘極驅動器可承受最高 120V 直流開機電壓。
Design guide: PDF
電路圖: PDF
參考設計

PMP20657 — 精巧、高效的單向 48V 至 12V@400W 汽車電源參考設計

PMP20657 參考設計是一款緊湊高效能的單向 48V 轉 12V (400W) 電源轉換器。本設計採用偽隔離架構以保護 12V 負載。相移全橋拓撲結構可實現超過 95% 的峰值效率。輕載模式下,12V 輸出仍能維持完整穩壓,且待機功耗低於 100mW。300kHz/600kHz 開關頻率可實現小型化解決方案。
Test report: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
HSOIC (DDA) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian

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