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UCC27211A

現行

具有 8V UVLO 和負電壓處理的 120V 4.5A 半橋閘極驅動器

產品詳細資料

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
VSON (DRM) 8 16 mm² (4 mm × 4 mm)
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible inputs
  • 8V to 17V VDD operating range, (20V ABS MAX)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns delay matching
  • Symmetrical undervoltage lockout for high-side and low-side driver
  • Industry standard package available
    • 4mm × 4mm SON-8
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible inputs
  • 8V to 17V VDD operating range, (20V ABS MAX)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns delay matching
  • Symmetrical undervoltage lockout for high-side and low-side driver
  • Industry standard package available
    • 4mm × 4mm SON-8

The UCC27211A device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27211A (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27211A device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27211A (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC27211A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO datasheet (Rev. D) PDF | HTML 2024/7/18
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML 2026/3/2
應用說明 Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML 2026/2/27
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
技術文章 For efficiencies’ sake – how to integrate bidirectional power flow into your UPS design (part 1) PDF | HTML 2024/1/11
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Understanding and comparing peak current capability of gate drivers PDF | HTML 2021/3/30
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
白皮書 Power Electronics in Motor Drives: Where is it? (Rev. A) 2019/10/1
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29
技術文章 How to achieve higher system efficiency- part one: high-current gate drivers PDF | HTML 2016/11/16

設計與開發

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模擬型號

UCC27211 PSpice Transient Model

SLUM245.ZIP (31 KB) - PSpice 模型
支援產品和硬體
模擬型號

UCC27211 TINA-TI Transient Reference Design

SLUM304.TSC (107 KB) - TINA-TI 參考設計
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模擬型號

UCC27211 TINA-TI Transient Spice Model

SLUM305.ZIP (9 KB) - TINA-TI Spice 模型
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模擬型號

UCC27211 Unencrypted PSpice Transient Model

SLUM504.ZIP (1 KB) - PSpice 模型
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計算工具

SLURB12 — UCC272xx-UCC273xx Schematic Review Template

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參考設計

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此 TI 參考設計為汽車電壓升壓轉換器模組。此模組的目的在於透過升壓操作,於電壓驟降事件(例如引擎啟動)期間,為車輛電子設備提供穩定的電壓。此設計以 C2000 即時微控制器為基礎,透過 12V 汽車電池系統提供高達 400 瓦特的功率。  此解決方案支援 6V-16V 的持續運作輸入電壓,並對 36V 負載突降提供防護,以提供穩定的 12V 輸出供應與反向電池保護。

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參考設計

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