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UCC27200-Q1

現行

Automotive, 120V 3A/3A half-bridge gate driver with 8V UVLO and CMOS inputs

產品詳細資料

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -18 Features Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Noninverting
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -18 Features Integrated bootstrap diode, Negative Voltage Handling on Input TI functional safety category Functional Safety-Capable Driver configuration Noninverting
HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm)
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching
  • AEC-Q100 qualified for automotive applications: device temperature grade 1
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Maximum boot voltage: 120V
  • Maximum VDD voltage: 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise and 7ns fall time with 1000pF load
  • 1ns delay matching

The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27200-Q1 has high-noise-immune CMOS input thresholds.

The device is offered in the 8-pin SO PowerPAD™ (DDA) package.

The UCC27200-Q1 high frequency N-channel MOSFET drivers includes a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.

The UCC27200-Q1 has high-noise-immune CMOS input thresholds.

The device is offered in the 8-pin SO PowerPAD™ (DDA) package.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC27200-Q1 Automotive 120V, 3A/3A Half-Bridge Driver with 8V UVLO datasheet (Rev. D) PDF | HTML 2024/7/18
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML 2026/3/2
應用說明 Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML 2026/2/27
功能安全資訊 UCC27200-Q1, UCC2720xA-Q1, and UCC2721xA-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. C) PDF | HTML 2025/11/6
應用說明 Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024/3/25
應用說明 Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024/1/24
應用說明 Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023/9/8
應用說明 Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 2022/2/17
應用說明 Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021/4/7
應用說明 Understanding and comparing peak current capability of gate drivers PDF | HTML 2021/3/30
應用說明 Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020/5/12
Application brief External Gate Resistor Selection Guide (Rev. A) 2020/2/28
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020/2/28
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019/10/22
應用說明 Maximizing DC/DC converter designs with UCC27282 2019/1/18
應用說明 UCC27282 Improving motor drive system robustness 2019/1/11
更多文件說明 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018/10/29
應用說明 PFC Design Choice for On Board Charger Designs 2018/5/24
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles 2018/3/27

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開發板

UCC27288EVM — UCC27288 100-V、3-A、8-V UVLO 半橋閘極驅動器評估模組

UCC27288EVM 專為評估 UCC27288D 而設計,這是一款具備 2.5-A 峰值電流源和 3.5-A 峰值汲極電流能力的 100-V 半橋閘極驅動器。此 EVM 可做為驅動功率 MOSFET 的參考設計,驅動電壓高達 20-V。
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計算工具

SLURB12 — UCC272xx-UCC273xx Schematic Review Template

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