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隔離式閘極驅動器

UCC21750

現行

適用於 IGBT/SiCFET 且具 DESAT 和內部米勒鉗位的 5.7kVrms ± 10A、單通道絕緣式閘極驅動器

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產品規格表

UCC21750

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program

The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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功能相同，但針腳輸出與所比較的裝置不同。
UCC21710 現行 適用於 IGBT/SiC 且具 OC 偵測、內部箝位的 5.7kVrms ± 10A、單通道絕緣式閘極驅動器 Supports internal Miller clamp; only supports Soft Turn-OFF
UCC21732 現行 適用於 IGBT/SiC FET 且具 2 段式關閉功能的 5.7kVrms、±10A 單通道絕緣式閘極驅動器 Supports external Miller clamp; supports two-level Soft Turn-OFF

技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC21750 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. C) PDF | HTML 2023/1/12
證書 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026/7/15
EVM User's guide UCC2181xx, UCC217xx, and ISO5x5x Evaluation Module (Rev. A) PDF | HTML 2026/6/8
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024/12/11
應用說明 Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024/7/19
Application brief Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. C) PDF | HTML 2023/9/8
證書 UCC217xx/-Q1 CQC Certificate of Product Certification 2023/6/7
技術文章 Misconceptions about EV charging PDF | HTML 2022/2/24
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021/12/16
證書 FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance 2021/10/26
電子書 E-book: An engineer’s guide to industrial robot designs 2020/2/12
應用說明 Performance of the Analog PWM Channel in Smart Gate Drivers 2020/1/16
設計指南 SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 2019/12/18
使用指南 UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 2019/9/9
技術文章 Searching for the newest innovations in power? Find them at APEC PDF | HTML 2019/2/9
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 2019/1/30

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC21750QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板

UCC21750QDWEVM-025 是一款精巧的單通道絕緣式閘極驅動器電路板，可提供 SiC MOSFET 和 Si IGBT 電源模組所需的驅動、偏電壓、去飽和功能式保護和診斷功能，採用 150 x 62 x 17mm 和 106 x 62 x 30mm 封裝。此 TI EVM 是以 SOIC-16DW 封裝，沿面距離與電氣間隙為 8.0mm 的 5.7 kVrms 強化型隔離驅動器 UCC21750 為基礎。EVM 包括 SN6505B 架構的隔離式 DC-DC 變壓器偏壓電源供應器。
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開發板

UCC21750QDWEVM-054 — 適用 Wolfspeed® 1,200V SiC 平台的 UCC21750 評估模組

UCC21750QDWEVM-054 是精巧型半橋閘極驅動器評估模組，由兩個單通道及隔離式閘極驅動器組成。該評估模組針對數種不同 Wolfspeed® 碳化矽 (SiC) MOSFET 模組和離散式 SiC MOSFET，以及具備類似接腳配置的其他絕緣柵極雙極電晶體 (IGBT) 或 SiC MOSFET 模組，提供驅動所需的供應電壓、驅動、保護與監控功能。 

使用指南: PDF | HTML
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模擬型號

UCC21750 PSpice Transient Model

SLUM680.ZIP (90 KB) - PSpice 模型
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模擬型號

UCC21750 TINA-TI Reference Design

SLUM887 (2184 KB) - TINA-TI 參考設計
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模擬型號

UCC21750 Unencrypted PSPICE Transient Model

SLUM718.ZIP (6 KB) - PSpice 模型
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模擬型號

UCC21750DWR PSPICE Model

SLUM736.ZIP (6 KB) - PSpice 模型
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計算工具

SLUC695 — UCC217xx XL Calculator Tool

Calculator enable customer design in terms of switching frequency and OC/DESAT, STO timing
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參考設計

PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計

此參考設計展示 UCC21732 柵極驅動器與 UCC14xxx 系列偏壓電源的組合。此設計可用於驅動各種電源開關，其中包括直接連接至 Wolfspeed 碳化矽 (SiC) 場效應電晶體 (FET) 模組。此參考設計也可做為高側或低側驅動器，或是可以用電容模擬負載進行測試。

UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品，每個元件都具備不同的目標輸入電壓和輸出功率。

UCC14xxx-Q1 資訊：

  • UCC14240-Q1
    • 隔離：基本
    • 輸入電壓 (V)：24 (21 至 27)
    • 輸出電壓 (V)：25 (18 至 25)
    • 功率輸出 (...)
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參考設計

TIDA-01599 — TÜV SÜD 評估工業驅動器的安全扭矩關閉 (STO) 參考設計 (IEC 61800-5-2)

本參考設計概述具有 CMOS 輸入隔離式 IGBT 閘極驅動器的三相逆變器的安全扭矩關閉 (STO) 子系統。STO 子系統採用雙通道架構 (1oo2)，硬體容錯範圍爲 1 (HFT=1)。實作時遵循去能脫扣概念。當雙 STO 輸入 (STO_1 和 STO_2) 變低電位作動時，六個隔離 IGBT 柵極驅動器的一次和二次側對應電源供電將透過負載開關切斷。如此可消除控制馬達並為馬達通電的可能性。STO 參考設計 (1oo2) 已由 TÜV SÜD 進行評估，一般適用於 SIL 3 和 PL e/Cat。3.
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