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UCC21550

現行

Reinforced, 4A/6A dual-channel isolated gate driver w/ disable, programmable deadtime

產品詳細資料

Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 7070 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 7070 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm) SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm)
  • Universal: dual low-side, dual high-side or halfbridge driver

  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing
  • Universal: dual low-side, dual high-side or halfbridge driver

  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 UCC21550x 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver datasheet (Rev. C) PDF | HTML 2024/8/9
證書 VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 2026/7/15
證書 FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance. 2025/5/19
證書 CQC Certificate for UCC21551xx 2024/8/27

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開發板

UCC21520EVM-286 — UCC21520 4A/6A 隔離式雙通道閘極驅動器評估模組

UCC21520EVM-286 專為評估 UCC21520DW 而設計,這是一款具備 4 A 源極和 6-A 汲極峰值電流能力的隔離式雙通道閘極驅動器。此 EVM 可做為驅動功率 MOSFETS、IGBTS 和 SiC MOSFETS 的參考設計,並提供 UCC21520 針腳功能識別、元件選擇指南與 PCB 配置範例。

使用指南: PDF | HTML
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SOIC (DW) 16 Ultra Librarian
SOIC (DWK) 14 Ultra Librarian

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