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UCC21540A-Q1

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具備啟用功能、可編程失效時間的車用增強 4A/6A 雙通道隔離式閘極驅動器

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UCC21540A-Q1 將逐漸停產
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UCC21550-Q1 現行 具有停用功能、可編程失效時間的車用增強型 4A/6A 雙通道隔離式閘極驅動器 Improved CMTI, faster VDD startup

UCC21540A-Q1

最後一次購買
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產品詳細資料

Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5 TI functional safety category Functional Safety Quality-Managed
Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, Programmable dead time Output VCC/VDD (min) (V) 6 Output VCC/VDD (max) (V) 18 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.028 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 5 Fall time (ns) 6 Undervoltage lockout (typ) (V) 5 TI functional safety category Functional Safety Quality-Managed
SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm)

The UCC21540-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4 A peak-source and 6 A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.

The UCC21540-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection.

The UCC21540-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4 A peak-source and 6 A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.

The UCC21540-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection.
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* 資料表 UCC21540-Q1 Reinforced Isolation Dual-Channel Gate Driver datasheet (Rev. D) PDF | HTML 2024/8/23

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