TXS0101

現行

適用開汲極和推拉式應用的 1 位元雙向電壓位準移位器

立即訂購

產品規格表

document-pdfAcrobat TXS0101 1-Bit Bidirectional Level-Shifting, Voltage-Level Translator With Auto-Direction-Sensing for Open-Drain and Push-Pull Applications datasheet (Rev. F) (英文) PDF | HTML

TXS0101

現行

立即訂購

產品詳細資料

Bits (#)

1

Data rate (max) (Mbps)

50

Topology

Open drain, Push-Pull

Direction control (typ)

Auto-direction

Vin (min) (V)

1.2

Vin (max) (V)

3.6

Vout (min) (V)

1.65

Vout (max) (V)

5.5

Applications

GPIO

Features

Edge rate accelerator, Output enable, Partial power down (Ioff), Vcc isolation

Prop delay (ns)

165

Technology family

TXS

Supply current (max) (mA)

0.025

Rating

Catalog

Operating temperature range (°C)

-40 to 85

Bits (#)

1

Data rate (max) (Mbps)

50

Topology

Open drain, Push-Pull

Direction control (typ)

Auto-direction

Vin (min) (V)

1.2

Vin (max) (V)

3.6

Vout (min) (V)

1.65

Vout (max) (V)

5.5

Applications

GPIO

Features

Edge rate accelerator, Output enable, Partial power down (Ioff), Vcc isolation

Prop delay (ns)

165

Technology family

TXS

Supply current (max) (mA)

0.025

Rating

Catalog

Operating temperature range (°C)

-40 to 85

USON (DRY)

6

1.45 mm² (1.45 mm × 1 mm)

SOT-SC70 (DCK)

6

4.2 mm² (2 mm × 2.1 mm)

SOT-23 (DBV)

6

8.12 mm² (2.9 mm × 2.8 mm)

SOT-5X3 (DRL)

6

2.56 mm² (1.6 mm × 1.6 mm)

DSBGA (YZP)

6

2.1875 mm² (— mm × — mm)

Latch-up performance exceeds 100mA per JESD 78, class II
ESD protection exceeds JESD 22:
- A Port:
  - 2500V Human-Body Model (A114-B)
  - 200V Machine Model (A115-A)
  - 1500V Charged-Device Model (C101)
- B port:
  - 8kV Human-Body Model (A114-B)
  - 200V Machine Model (A115-A)
  - 1500V Charged-Device Model (C101)
No direction-control signal needed
Maximum data rates:
- 24Mbps (push pull)
- 2Mbps (open drain)
Available in the Texas Instruments NanoFree™ package
1.65V to 3.6V on A port and 2.3V to 5.5V on B port ( VCCA ≤ VCCB)
VCC isolation feature – if either VCC input is at GND, both ports are in the high-impedance state
No power-supply sequencing required – either VCCA or VCCB can be ramped first
Ioff supports partial-power-down mode operation

Latch-up performance exceeds 100mA per JESD 78, class II
ESD protection exceeds JESD 22:
- A Port:
  - 2500V Human-Body Model (A114-B)
  - 200V Machine Model (A115-A)
  - 1500V Charged-Device Model (C101)
- B port:
  - 8kV Human-Body Model (A114-B)
  - 200V Machine Model (A115-A)
  - 1500V Charged-Device Model (C101)
No direction-control signal needed
Maximum data rates:
- 24Mbps (push pull)
- 2Mbps (open drain)
Available in the Texas Instruments NanoFree™ package
1.65V to 3.6V on A port and 2.3V to 5.5V on B port ( VCCA ≤ VCCB)
VCC isolation feature – if either VCC input is at GND, both ports are in the high-impedance state
No power-supply sequencing required – either VCCA or VCCB can be ramped first
Ioff supports partial-power-down mode operation

This one-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.65V to 3.6V. VCCA must be less than or equal to VCCB . The B port is designed to track VCCB. VCCB accepts any supply voltage from 2.3V to 5.5V. This allows for low voltage bidirectional translation between any of the 1.8V, 2.5V, 3.3V, and 5V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

To put the device in the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the current-sourcing capability of the driver determines the minimum value of the resistor.

This one-bit non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.65V to 3.6V. VCCA must be less than or equal to VCCB . The B port is designed to track VCCB. VCCB accepts any supply voltage from 2.3V to 5.5V. This allows for low voltage bidirectional translation between any of the 1.8V, 2.5V, 3.3V, and 5V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

To put the device in the high-impedance state during power up or power down, tie OE to GND through a pull-down resistor; the current-sourcing capability of the driver determines the minimum value of the resistor.

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重要文件	類型	標題	格式選項
*	資料表	TXS0101 1-Bit Bidirectional Level-Shifting, Voltage-Level Translator With Auto-Direction-Sensing for Open-Drain and Push-Pull Applications datasheet (Rev. F)	PDF \| HTML	2025/9/4
	應用說明	Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators	PDF \| HTML	2024/7/12
	應用說明	Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A)	PDF \| HTML	2024/7/3
	Application brief	Integrated vs. Discrete Open Drain Level Translation	PDF \| HTML	2024/1/9
	應用說明	Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters	PDF \| HTML	2023/9/29
	應用說明	Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato	PDF \| HTML	2023/6/28
	選擇指南	Voltage Translation Buying Guide (Rev. A)		2021/4/15
	應用說明	Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A)		2018/3/28
	應用說明	Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices		2017/11/19
	應用說明	Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators		2017/10/30
	應用說明	A Guide to Voltage Translation With TXS-Type Translators		2010/6/29