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電壓轉換器及電平移位器
電壓轉換器

TXB0108-Q1

現行

具有自動方向感測和 +/15-kV ESD 防護的 8 位元雙向電壓位準轉換器

立即訂購
產品規格表

TXB0108-Q1

現行
產品規格表 立即訂購

產品詳細資料

Bits (#) 8 Data rate (max) (Mbps) 100 Topology Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.2 Vin (max) (V) 3.6 Vout (min) (V) 1.65 Vout (max) (V) 5.5 Applications GPIO, I2S, JTAG, PCM, SPI, UART Features Edge rate accelerator, Output enable, Partial power down (Ioff), Vcc isolation Prop delay (ns) 4 Technology family TXB Supply current (max) (mA) 0.011 Rating Automotive Operating temperature range (°C) -40 to 125
Bits (#) 8 Data rate (max) (Mbps) 100 Topology Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.2 Vin (max) (V) 3.6 Vout (min) (V) 1.65 Vout (max) (V) 5.5 Applications GPIO, I2S, JTAG, PCM, SPI, UART Features Edge rate accelerator, Output enable, Partial power down (Ioff), Vcc isolation Prop delay (ns) 4 Technology family TXB Supply current (max) (mA) 0.011 Rating Automotive Operating temperature range (°C) -40 to 125
TSSOP (PW) 20 41.6 mm² (6.5 mm × 6.4 mm)
  • 1.2V to 3.6V on A Port and 1.65 V to 5.5V on B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Low Power Consumption, 4µA Max ICC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2000V Human-Body Model (A114-B)
      • 1000V Charged-Device Model (C101)
    • B Port
      • ±15kV Human-Body Model (A114-B)
      • 1000V Charged-Device Model (C101)
  • 1.2V to 3.6V on A Port and 1.65 V to 5.5V on B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Low Power Consumption, 4µA Max ICC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2000V Human-Body Model (A114-B)
      • 1000V Charged-Device Model (C101)
    • B Port
      • ±15kV Human-Body Model (A114-B)
      • 1000V Charged-Device Model (C101)

This 8-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2V to 3.6V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65V to 5.5V. This allows for universal low-voltage bidirectional translation between any of the 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0108-Q1 is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power-up or power-down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This 8-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2V to 3.6V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65V to 5.5V. This allows for universal low-voltage bidirectional translation between any of the 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0108-Q1 is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power-up or power-down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TXB0108-Q1 8-Bit Bidirectional Voltage-Level Translator with Auto-Direction Sensing and ±15kV ESD Protection datasheet (Rev. A) PDF | HTML 2025/2/10
應用說明 Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 2023/9/29
應用說明 Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 2023/6/28

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