TPS7H6025-SEP
- Radiation performance:
- Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 1.3A peak source, 2.5A peak sink current
- Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
- Selectable input interlock protection in independent input mode
- Split outputs for adjustable turn-on and turn-off times
- 30ns typical propagation delay in independent input mode
- 5.5ns typical delay matching
- Plastic packages outgas tested per ASTM E595
- Available in military temperature range (–55°C to 125°C)
The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), the TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs, which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.
The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers datasheet (Rev. C) | PDF | HTML | 2025/4/11 | ||
| * | 輻射及可靠性報告 | TPS7H6005-SP/-SEP, TPS7H6015-SP/-SEP, TPS7H6025-SP/-SEP Neutron Displacement Damage Characterization Report (Rev. B) | 2025/12/5 | |||
| * | 輻射及可靠性報告 | TPS7H6025-SEP Total Ionizing Dose (TID) Report | 2025/4/29 | |||
| * | 輻射及可靠性報告 | TPS7H60X5-SEP Single-Event Effects (SEE) Report | PDF | HTML | 2024/11/14 | ||
| * | VID | TPS7H6025-SEP VID TPS7H6025-SEP V62-24632 | 2025/4/30 | |||
| 選擇指南 | TI Space Products (Rev. L) | 2026/3/27 | ||||
| 技術文章 | 如何為具有電子電源系統的下一代衛星最佳化 SWaP (Rev. A) | PDF | HTML | Download English Version (Rev.A) | PDF | HTML | 2025/3/20 | |
| 應用說明 | Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) | PDF | HTML | 2022/9/15 | |||
| 電子書 | Radiation Handbook for Electronics (Rev. A) | 2019/5/21 |
設計與開發
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TPS7H6025EVM — TPS7H6025 評估模組
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TIDA-050088 — 適用於 Versal AI Edge 的耐輻射電源參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| HTSSOP (DCA) | 56 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。