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TPS7H2211-SP

現行

Radiation-hardened, QML-P and QML-V, 4.5V to 14V input 3.5A eFuse

產品詳細資料

Vabsmax_cont (V) 16 Vin (max) (V) 14 Vin (min) (V) 4.5 Features Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Overcurrent response Circuit breaker Fault response Auto-retry Ron (typ) (mΩ) 54 Overvoltage response Cut-off Rating Space Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.0058 Quiescent current (Iq) (max) (A) 0.008 Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125
Vabsmax_cont (V) 16 Vin (max) (V) 14 Vin (min) (V) 4.5 Features Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Overcurrent response Circuit breaker Fault response Auto-retry Ron (typ) (mΩ) 54 Overvoltage response Cut-off Rating Space Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.0058 Quiescent current (Iq) (max) (A) 0.008 Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125
CFP (HKR) 16 105.6 mm² (— mm × — mm) DIESALE (KGD) See data sheet HTSSOP (DAP) 32 89.1 mm² (11 mm × 8.1 mm)
  • Total ionizing dose (TID) characterized to 100krad(Si)
    • Radiation hardness assurance availability of 100krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg*
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 75MeV-cm2/mg*
  • Integrated single channel eFuse
  • Input voltage range: 4.5V to 14V
  • Low on-resistance (RON) of 60mΩ maximum at 25°C and VIN = 12V
  • 3.5A maximum continuous switch current
  • Low control input threshold aids in use of 1.2, 1.8, 2.5, and 3.3V logic
  • Configurable rise time (soft start)
  • Reverse current protection (RCP)
  • Overvoltage protection (OVP)
  • Internal current limit (fast-trip)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad
  • Available in military (–55°C to 125°C) temperature range
  • Total ionizing dose (TID) characterized to 100krad(Si)
    • Radiation hardness assurance availability of 100krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg*
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 75MeV-cm2/mg*
  • Integrated single channel eFuse
  • Input voltage range: 4.5V to 14V
  • Low on-resistance (RON) of 60mΩ maximum at 25°C and VIN = 12V
  • 3.5A maximum continuous switch current
  • Low control input threshold aids in use of 1.2, 1.8, 2.5, and 3.3V logic
  • Configurable rise time (soft start)
  • Reverse current protection (RCP)
  • Overvoltage protection (OVP)
  • Internal current limit (fast-trip)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad
  • Available in military (–55°C to 125°C) temperature range

The TPS7H2211 is a single channel eFuse (integrated FET load switch with additional features) that provides reverse current protection, overvoltage protection, and a configurable rise time to minimize inrush current, soft start. The device contains P-channel MOSFETs that operate over an input voltage range of 4.5V to 14V and supports a maximum continuous current of 3.5A.

The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. Overvoltage protection and soft start are programmable with few external components through the OVP and SS pins. The TPS7H2211 is available in a ceramic and plastic package with an exposed thermal pad allowing for improved thermal performance. A standard microcircuit drawing (SMD) is available for the QML 5962R1822001VXC. A vendor item drawing (VID) is available for the -SEP variant, V62/23609.

The TPS7H2211 is a single channel eFuse (integrated FET load switch with additional features) that provides reverse current protection, overvoltage protection, and a configurable rise time to minimize inrush current, soft start. The device contains P-channel MOSFETs that operate over an input voltage range of 4.5V to 14V and supports a maximum continuous current of 3.5A.

The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. Overvoltage protection and soft start are programmable with few external components through the OVP and SS pins. The TPS7H2211 is available in a ceramic and plastic package with an exposed thermal pad allowing for improved thermal performance. A standard microcircuit drawing (SMD) is available for the QML 5962R1822001VXC. A vendor item drawing (VID) is available for the -SEP variant, V62/23609.

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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse datasheet (Rev. F) PDF | HTML 2024/3/6
* 輻射及可靠性報告 TPS7H2211-QMLP Total Ionizing Dose (TID) Radiation Report PDF | HTML 2023/12/6
* 輻射及可靠性報告 Single-Event-Effects Test Report of the TPS7H2211-SP Load Switch (Rev. A) 2023/12/6
* 輻射及可靠性報告 TPS7H2211-SP Neutron Displacement Damage (NDD) Characterization 2021/11/8
* SMD TPS7H2211-SP SMD 5962-18220 2021/9/2
選擇指南 TI Space Products (Rev. L) 2026/3/27
應用說明 Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form (Rev. A) PDF | HTML 2025/11/5
設計指南 Radiation-Hardened Space Battery Management System (BMS) Reference Design PDF | HTML 2025/7/30
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 2025/6/17
應用說明 Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 2025/6/10
更多文件說明 TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 2025/2/20
應用說明 QML flow, its importance, and obtaining lot information (Rev. C) 2023/8/30
證書 TPS7H2211EVM EU Declaration of Conformity (DoC) 2023/6/21
應用說明 Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022/10/19
應用說明 DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020/8/21
技術文章 Simplifying radiation-hardened power-supply design with eFuses PDF | HTML 2020/7/14
應用說明 Failure Containment in Spacecraft Point-of-Load Power Supplies PDF | HTML 2020/4/30
技術文章 4 trends in space-grade power management PDF | HTML 2020/2/12
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21
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設計與開發

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開發板

TPS7H2211EVM — 航太級強化型產品、4.5-V 至 14-V 輸入、3.5-A、負載開關和 eFuse 評估模組

TPS7H2211EVM 展示單一 TPS7H2211 eFuse 航太級強化型產品的運作情況。電路板提供可裝入其他元件的元件封裝,以便進行自訂配置測試,例如平行或備援 eFuse。

使用指南: PDF | HTML
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開發板

TPS7H2211EVM-CVAL — 適用於 4.5-V 至 14-V 輸入、3.5-A 負載開關和 eFuse 的 TPS7H2211-SP 評估模組

TPS7H2211EVM-CVAL 是 TPS7H2211-SP 的評估模組 (EVM)。其可實現負載開關運作,並測試提供的反向電流保護、過電壓保護及可配置上升時間,以將 TPS7H2211-SP 的突波電流 (緩啟動) 降到最低。

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模擬型號

TPS7H2211-SP PSpice Transient Model

SLVMDN6.ZIP (27 KB) - PSpice 模型
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模擬型號

TPS7H2211-SP PSpice Worst-Case Analysis (WCA) Model

SLVMDQ4.ZIP (24 KB) - PSpice 模型
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計算工具

TVS-RECOMMENDATION-CALC — TVS diode recommendation tool

This tool suggests suitable TVS for given system parameters and abs max voltage rating of the device.
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參考設計

TIDA-010931 — 抗輻射航太電池管理系統 (BMS) 參考設計

此參考設計展示航太級電池管理系統。電路可量測串聯的八顆電池芯,以監控電池健康狀態、充電狀態與溫度。
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封裝 針腳 CAD 符號、佔位空間與 3D 模型
CFP (HKR) 16 Ultra Librarian
DIESALE (KGD) Ultra Librarian
HTSSOP (DAP) 32 Ultra Librarian

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