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電源保護開關與控制器
eFuse（整合式熱插拔）

TPS7H2201-SEP

現行

Radiation-tolerant, 1.5V to 7V input 6A eFuse

立即訂購
產品規格表

TPS7H2201-SEP

現行
產品規格表 立即訂購

產品詳細資料

Vabsmax_cont (V) 7.5 Vin (max) (V) 7 Vin (min) (V) 1.5 Current limit (max) (A) 7.5 Current limit (min) (A) 0.5 Features Current monitoring, Overcurrent protection, Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Overcurrent response Circuit breaker, Current limiting Fault response Auto-retry Ron (typ) (mΩ) 20 Overvoltage response Cut-off Rating Space Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.0058 Quiescent current (Iq) (max) (A) 0.008 Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125
Vabsmax_cont (V) 7.5 Vin (max) (V) 7 Vin (min) (V) 1.5 Current limit (max) (A) 7.5 Current limit (min) (A) 0.5 Features Current monitoring, Overcurrent protection, Overvoltage protection, Reverse current blocking always, Soft-start, Thermal shutdown Overcurrent response Circuit breaker, Current limiting Fault response Auto-retry Ron (typ) (mΩ) 20 Overvoltage response Cut-off Rating Space Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.0058 Quiescent current (Iq) (max) (A) 0.008 Device type eFuses and hot swap controllers Operating temperature range (°C) -55 to 125
HTSSOP (DAP) 32 89.1 mm² (11 mm × 8.1 mm)
  • Standard micro circuit available, SMD 5962R17220
  • Vendor item drawing available, VID V62/23608
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to TID 100krad(Si)
    • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • SEFI/SET characterized to LET = 75MeV-cm2/mg
  • Integrated single channel eFuse
  • Input voltage range: 1.5V to 7V
  • Low on-resistance (RON) of:
    • 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
    • 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
  • 6A maximum continuous switch current
  • Low control input threshold enables use of 1.2, 1.8, 2.5, and 3.3V logic
  • Configurable rise time (soft start)
  • Reverse current protection
  • Programmable and internal current limiting (fast-trip)
  • Programmable fault timer (current limit and retry modes)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad
  • Standard micro circuit available, SMD 5962R17220
  • Vendor item drawing available, VID V62/23608
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to TID 100krad(Si)
    • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • SEFI/SET characterized to LET = 75MeV-cm2/mg
  • Integrated single channel eFuse
  • Input voltage range: 1.5V to 7V
  • Low on-resistance (RON) of:
    • 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
    • 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
  • 6A maximum continuous switch current
  • Low control input threshold enables use of 1.2, 1.8, 2.5, and 3.3V logic
  • Configurable rise time (soft start)
  • Reverse current protection
  • Programmable and internal current limiting (fast-trip)
  • Programmable fault timer (current limit and retry modes)
  • Thermal shutdown
  • Ceramic and plastic package with thermal pad

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.

The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to 125°C.

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.

The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to 125°C.
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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse datasheet (Rev. G) PDF | HTML 2025/12/2
* 輻射及可靠性報告 TPS7H2201-SEP Production Flow and Reliability Report PDF | HTML 2023/9/29
* 輻射及可靠性報告 TPS7H2201-SEP TID Radiation Report (Rev. A) PDF | HTML 2023/9/18
* 輻射及可靠性報告 TPS7H2201-SEP Neutron Displacement (NDD) Characterization Report PDF | HTML 2023/8/29
* 輻射及可靠性報告 Single Event Effects Report of the TPS7H2201-SEP eFuse and Load Switch PDF | HTML 2023/8/24
* VID TPS7H2201-SEP VID V62-23608 2024/5/1
選擇指南 TI Space Products (Rev. L) 2026/3/27
技術文章 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML Download English Version (Rev.A) PDF | HTML 2024/1/11
證書 TPS7H2201EVM EU Declaration of Conformity (DoC) 2023/6/19
應用說明 Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022/9/15
技術文章 Simplifying radiation-hardened power-supply design with eFuses PDF | HTML 2020/7/14
應用說明 Failure Containment in Spacecraft Point-of-Load Power Supplies PDF | HTML 2020/4/30
電子書 Radiation Handbook for Electronics (Rev. A) 2019/5/21
技術文章 When failure isn’t an option: power up your next satellite with integrated functio PDF | HTML 2019/4/30

設計與開發

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開發板

TPS7H2201EVM — 適用 1.5-V 至 7-V 輸入、6-A 負載開關/eFuse 的 TPS7H2201 評估模組

TPS7H2201EVM 展示單一 TPS7H2201 eFuse (耐輻射/強化塑膠) 的運作情況。電路板提供可裝入其他元件的元件封裝，以便進行自訂配置測試，例如平行或備援 eFuse。
使用指南: PDF | HTML
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模擬型號

TPS7H2201-SP PSpice Transient Model

SLVMCY9.ZIP (214 KB) - PSpice 模型
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模擬型號

TPS7H2201-SP Unencrypted PSpice Transient Model (Rev. A)

SLVMCY8A.ZIP (4 KB) - PSpice 模型
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