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TPS1212-Q1

現行

具有雙向電流監控、I2t 與診斷功能的車用 74V 低 IQ 高壓側驅動器

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產品規格表

TPS1212-Q1

現行
產品規格表 立即訂購

產品詳細資料

FET External Number of channels 1 Rating Automotive Operating voltage (max) (V) 74 Operating voltage (min) (V) 3.5 Features Adjustable current limit, Bidirectional, Current monitoring, Fault Diagnostic, I2T, Overtemperature protection, Precharge FET driver, Reverse polarity protection, Second Gate Drive, Short-circuit protection, UVLO Current sense accuracy +/-2% at 30-mV VSNS Operating temperature range (°C) -40 to 125
FET External Number of channels 1 Rating Automotive Operating voltage (max) (V) 74 Operating voltage (min) (V) 3.5 Features Adjustable current limit, Bidirectional, Current monitoring, Fault Diagnostic, I2T, Overtemperature protection, Precharge FET driver, Reverse polarity protection, Second Gate Drive, Short-circuit protection, UVLO Current sense accuracy +/-2% at 30-mV VSNS Operating temperature range (°C) -40 to 125
VQFN (RGE) 23 16 mm² 4 x 4

  • AEC-Q100 automotive qualified for grade 1 temperature
  • Functional Safety-Capable
  • 3.5V to 73V input range (74V absolute maximum)
  • Reverse input and output protection down to –65V
  • Integrated 12V charge pump
  • Low IQ = 20µA in low power mode (LPM = Low)
  • Low 1µA shutdown current (EN/UVLO = Low)
  • Dual gate drive: GATE: 0.5A src/2A sink, G: 100µA src/0.39A sink
  • Accurate I2t overcurrent protection (IOC) with adjustable circuit breaker timer (I2t)
  • Accurate and fast (5µs) short-circuit protection
  • Fast transition (5µs) from low power mode to active mode using adjustable load wakeup threshold or LPM trigger with WAKE indication
  • Accurate analog bi-directional current monitor output (IMON, I_DIR): ±2% at 30mV VSNS
  • NTC based overtemperature sensing (TMP) and monitoring output (ITMPO)
  • Fault indication (FLT) during short circuit fault, I2t, charge pump UVLO, overtemperature
  • TPS12120-Q1 (I2t enabled), TPS12121-Q1 (I2t disabled)
  • Accurate (±2%) and adjustable undervoltage lockout (UVLO)

  • AEC-Q100 automotive qualified for grade 1 temperature
  • Functional Safety-Capable
  • 3.5V to 73V input range (74V absolute maximum)
  • Reverse input and output protection down to –65V
  • Integrated 12V charge pump
  • Low IQ = 20µA in low power mode (LPM = Low)
  • Low 1µA shutdown current (EN/UVLO = Low)
  • Dual gate drive: GATE: 0.5A src/2A sink, G: 100µA src/0.39A sink
  • Accurate I2t overcurrent protection (IOC) with adjustable circuit breaker timer (I2t)
  • Accurate and fast (5µs) short-circuit protection
  • Fast transition (5µs) from low power mode to active mode using adjustable load wakeup threshold or LPM trigger with WAKE indication
  • Accurate analog bi-directional current monitor output (IMON, I_DIR): ±2% at 30mV VSNS
  • NTC based overtemperature sensing (TMP) and monitoring output (ITMPO)
  • Fault indication (FLT) during short circuit fault, I2t, charge pump UVLO, overtemperature
  • TPS12120-Q1 (I2t enabled), TPS12121-Q1 (I2t disabled)
  • Accurate (±2%) and adjustable undervoltage lockout (UVLO)

TPS1212-Q1 is a family of low IQ smart high side drivers with protection and diagnostics. With wide operating voltage range of 3.5V to 73V, 74V absmax the device is suitable for 12V, 24V, and 48V automotive system designs.

The devices have two integrated gate drives with 0.5A/2A (GATE) and 100µA/0.39A (G). With LPM low, the low power path is kept ON and the main FETs are turned OFF with IQ of 20µA (typ). The auto load wakeup threshold is adjusted using RBYPASS resistor placed across DRN and CS2–. IQ reduces to 1µA (typ) with EN/UVLO low.

The device has accurate bi-directional current sensing (±2%) output (IMON) with adjustable I2t based overcurrent and short circuit protection using an external RSNS resistor and FLT indication. Auto-retry and latch-off fault behavior can be configured. The device also has NTC based temperature sensing (TMP) and monitoring output (ITMPO) output for overtemperature detection of external FETs.

The TPS1212-Q1 is available in 23-pin VQFN package.

TPS1212-Q1 is a family of low IQ smart high side drivers with protection and diagnostics. With wide operating voltage range of 3.5V to 73V, 74V absmax the device is suitable for 12V, 24V, and 48V automotive system designs.

The devices have two integrated gate drives with 0.5A/2A (GATE) and 100µA/0.39A (G). With LPM low, the low power path is kept ON and the main FETs are turned OFF with IQ of 20µA (typ). The auto load wakeup threshold is adjusted using RBYPASS resistor placed across DRN and CS2–. IQ reduces to 1µA (typ) with EN/UVLO low.

The device has accurate bi-directional current sensing (±2%) output (IMON) with adjustable I2t based overcurrent and short circuit protection using an external RSNS resistor and FLT indication. Auto-retry and latch-off fault behavior can be configured. The device also has NTC based temperature sensing (TMP) and monitoring output (ITMPO) output for overtemperature detection of external FETs.

The TPS1212-Q1 is available in 23-pin VQFN package.
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重要文件 類型 標題 格式選項 日期
* Data sheet TPS1212-Q1 Low IQ Automotive High-Side Switch Controller With Bi-directional IMON, Low Power Mode, Load Wakeup, I2t, and Diagnostics datasheet PDF | HTML 2025年 4月 14日
Application note Basics of High-Side Switches and Controllers PDF | HTML 2026年 3月 31日

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開發板

TPS1214Q1EVM — TPS1214-Q1 評估模組

TPS1214-Q1 評估模組 (EVM) 可對 TPS1214-Q1 智慧型高壓側驅動器進行參考電路評估。此 EVM 可完整配置高壓側驅動器，以及各種參數，例如過電流保護、短路保護和可配置 I2T 控制。此 EVM 可從跨接器設定各種閾值，以便在不同閾值和配置設定間輕鬆切換。
使用指南: PDF | HTML
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計算工具

TPS4812-Q1-CALC — TPS4812-Q1 design calculator

The design calculator allows customer to size the external peripheral components while designing with TPS4812-Q1, TPS1212-Q1, or TPS1214-Q1 controllers.
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參考設計

TIDA-020094 — 48V 區域參考設計

此參考設計展示了進階車用 48V 低電壓軌架構的趨勢。此設計包括 48V 骨幹架構和 48V 至 12V 電源轉換。參考設計重點介紹關鍵產品的 48V 負載驅動器。這些產品包括高壓側開關 (HSS) 和控制器 (HSSC)、智慧 eFuse 和馬達驅動器 (MD)。
Design guide: PDF
參考設計

PMP41150 — 1000W、48V 切換式電容器轉換器參考設計

此參考設計採用無電感器開關電容器轉換拓撲結構，實現高功率密度和精巧功率級 (70mm × 55mm × 2.85mm)。利用 TLC555 - Q1 定時器的簡易控制方案可實現具有 4:1 或 3:1 轉換比的固定轉換率輸出，並可針對不同配電需求進行設定。對於 4:1 轉換比，全負載效率為 96.7%，而峰值效率則為 98.5% (Iout = 30A)。對於 3:1 轉換比，全負載效率為 97.6%，而峰值效率則為 98.7% (Iout = 25A)。
Test report: PDF
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