產品詳細資料

Number of channels 1 Vrwm (V) 9 Bi-/uni-directional Bi-directional Package name DFN1006 Peak pulse power (8/20 μs) (max) (W) 90 IO capacitance (typ) (pF) 10 IEC 61000-4-2 contact (±V) 20000 IEC 61000-4-5 (A) 5.5 Clamping voltage (V) 13 Dynamic resistance (typ) 0.5 Interface type Audio, General purpose Breakdown voltage (min) (V) 9.5 IO leakage current (max) (nA) 100 Rating Automotive Operating temperature range (°C) -40 to 125
Number of channels 1 Vrwm (V) 9 Bi-/uni-directional Bi-directional Package name DFN1006 Peak pulse power (8/20 μs) (max) (W) 90 IO capacitance (typ) (pF) 10 IEC 61000-4-2 contact (±V) 20000 IEC 61000-4-5 (A) 5.5 Clamping voltage (V) 13 Dynamic resistance (typ) 0.5 Interface type Audio, General purpose Breakdown voltage (min) (V) 9.5 IO leakage current (max) (nA) 100 Rating Automotive Operating temperature range (°C) -40 to 125
X1SON (DPY) 2 0.6 mm² (1 mm × 0.6 mm)
  • AEC-Q101 qualified
  • IEC 61000-4-2 level 4 ESD protection
    • ±20-kV Contact Discharge
    • ±20-kV Air-Gap Discharge
  • ISO 10605 (330 pF, 330 Ω) ESD protection
    • ±8-kV Contact Discharge
    • ±15-kV Air-Gap Discharge
  • IEC 61000-4-5 surge protection
    • 4.5 A (8/20 µs)
  • I/O capacitance 10 pF (typical)
  • R DYN: 0.5 Ω (typical)
  • DC breakdown voltage ±9.5 V (minimum)
  • Ultra low leakage current 100 nA (maximum)
  • 13-V clamping voltage (typical at I PP = 1 A)
  • Industrial temperature range: –40°C to +125°C
  • Space-saving 0402 footprint
  • AEC-Q101 qualified
  • IEC 61000-4-2 level 4 ESD protection
    • ±20-kV Contact Discharge
    • ±20-kV Air-Gap Discharge
  • ISO 10605 (330 pF, 330 Ω) ESD protection
    • ±8-kV Contact Discharge
    • ±15-kV Air-Gap Discharge
  • IEC 61000-4-5 surge protection
    • 4.5 A (8/20 µs)
  • I/O capacitance 10 pF (typical)
  • R DYN: 0.5 Ω (typical)
  • DC breakdown voltage ±9.5 V (minimum)
  • Ultra low leakage current 100 nA (maximum)
  • 13-V clamping voltage (typical at I PP = 1 A)
  • Industrial temperature range: –40°C to +125°C
  • Space-saving 0402 footprint

The TPD1E10B09-Q1 device is a bidirectional electrostatic discharge (ESD) transient voltage suppression (TVS) diode in a small 0402 industry standard package. This TVS protection diode is convenient for component placement in space-saving applications and features low R DYN and high IEC rating. The TPD1E10B09-Q1 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4) offering ±20-kV contact discharge and ±20-kV IEC air-gap protection. ESD voltages can easily reach 5-kV and during extreme conditions these voltages can be significantly higher, causing damages to many integrated circuits. For example, in a low humidity environment voltages can exceed 20-kV.

The low dynamic resistance (0.5 Ω) and low clamping voltage (13 V at 1-A IPP) allows for system level protection against transient events, providing robust protection on designs that are exposed to ESD events. This device also features a 10-pF IO capacitance making it an excellent choice for audio lines, push buttons, memory interfaces, or GPIOs.

This device is also available without automotive qualification: TPD1E10B09.

The TPD1E10B09-Q1 device is a bidirectional electrostatic discharge (ESD) transient voltage suppression (TVS) diode in a small 0402 industry standard package. This TVS protection diode is convenient for component placement in space-saving applications and features low R DYN and high IEC rating. The TPD1E10B09-Q1 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4) offering ±20-kV contact discharge and ±20-kV IEC air-gap protection. ESD voltages can easily reach 5-kV and during extreme conditions these voltages can be significantly higher, causing damages to many integrated circuits. For example, in a low humidity environment voltages can exceed 20-kV.

The low dynamic resistance (0.5 Ω) and low clamping voltage (13 V at 1-A IPP) allows for system level protection against transient events, providing robust protection on designs that are exposed to ESD events. This device also features a 10-pF IO capacitance making it an excellent choice for audio lines, push buttons, memory interfaces, or GPIOs.

This device is also available without automotive qualification: TPD1E10B09.

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技術文件

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TPD1E10B09-Q1 Automotive 1-Channel ESD in 0402 Package With 10-pF Capacitance and 9-V Breakdown datasheet (Rev. B) PDF | HTML 2023/9/7
應用說明 ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022/8/18
應用說明 ISO 10605 Road Vehicles Test Methods for Elec. Disturbances from Electrostatic D (Rev. B) PDF | HTML 2022/8/17
Application brief ESD Protection for Automotive Infotainment (Rev. A) PDF | HTML 2021/11/12
使用指南 Generic ESD Evaluation Module User's Guide (Rev. A) PDF | HTML 2021/9/27
選擇指南 ESD by Interface Selection Guide (Rev. A) 2017/6/26
類比設計期刊 Design Considerations for System-Level ESD Circuit Protection 2012/9/25

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開發板

ESDEVM — 適用於 ESD 二極體封裝的通用評估模組,包括 0402、0201等

靜電敏感裝置 (ESD) 評估模組 (EVM) 是我們大多數 ESD 產品組合的開發平台。此電路板配備所有傳統 ESD 元件封裝,可測試任意數量的裝置。裝置可以焊接到其相應的元件封裝上,然後進行測試。對於一般高速 ESD 二極體,會實作阻抗控制的配置以取得 S 參數並取消內嵌電路板軌跡。對於非高速 ESD 二極體,其元件封裝會包含連接至測試點的軌跡,讓您輕鬆執行 DC 測試,例如崩潰電壓、保持電壓、洩漏等。電路板配置也可以透過將訊號針腳短路到訊號所在的任何地方,讓任何裝置針腳都能輕鬆地連接到電源 (VCC) 或接地。
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模擬型號

TPD1E10B09-Q1 IBIS Model

SLVMBQ8.ZIP (3 KB) - IBIS 模型
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X1SON (DPY) 2 Ultra Librarian

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