TMCS1126-Q1

現行

具有 AFR、參考和 ALERT 功能且符合 AEC-Q100 資格的 80ARMS 500kHz 霍爾效應電流感測器

產品詳細資料

Continuous current (max) (A) 80 Rating Automotive Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Iq (max) (mA) 14 Small-signal bandwidth (kHz) 500 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 80 Rating Automotive Sensitivity (typ) (mV/mT) 25, 33, 50, 75, 100, 150 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Iq (max) (mA) 14 Small-signal bandwidth (kHz) 500 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy - Grade A
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • Standard accuracy - Grade B
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 500kHz
    • Response time: 250ns
    • Propagation delay: 60ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 15mV/A to 150mV/A
  • Safety related certifications
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to 125°C, TA
  • Functional Safety-Capable
    • Documentation available to aid functional safety system design
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
  • High accuracy - Grade A
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • Standard accuracy - Grade B
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 500kHz
    • Response time: 250ns
    • Propagation delay: 60ns
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 15mV/A to 150mV/A
  • Safety related certifications
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1126-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±120A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides Grade B options at lower-cost.

The TMCS1126-Q1 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 0.9% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated, on-chip, Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±120A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with a minimum of 8mm creepage and clearance, provides high levels of reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides Grade B options at lower-cost.

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設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TMCS-A-ADAPTER-EVM — 適用於 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應電流感測器轉接卡 (不包括 IC)

TMCS-A-ADAPTER-EVM 是一款評估模組 (EVM),旨在協助快速、便利地使用採用 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應精密電流感測監控器。此 EVM 可讓使用者在透過隔離層測量隔離輸出時,將高達 90A 的電流推經霍爾輸入側。TMCS-A-ADAPTER-EVM 包含一個未組裝的 PCB,其具備可安裝測試點和分接接頭針腳的位置,以評估裝置。PCB 焊盤是重疊的,因此任何 DVG、DVF 或 DZP TMCS 零件都可以搭配 TMCS-A-ADAPTER-EVM 使用。

使用指南: PDF | HTML
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開發板

TMCS1126EVM — TMCS1126 評估模組

TMCS1126EVM 是旨在協助方便快速使用 TMCS1126 的工具,而 TMCS1126 是使用內部參考的隔離式霍爾效應精密電流感測監控器。此評估模組可讓使用者將最大操作電流推經霍爾輸入側,同時透過強化型隔離層量測隔離輸出。此固定裝置配置不做為目標電路模型使用,且此固定裝置也不是為了電磁 (EMI) 測試而配置。TMCS1126EVM 包含單一印刷電路板,分為五個獨立部分,可讓使用者測試單一靜態點的所有靈敏度變化 (A = 0.5 Vs、B = 0.33 Vs 或 C = 0.1 Vs)。
使用指南: PDF | HTML
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126BBA)

SBOMCP0.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126B6A)

SBOMCP2.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126B9A)

SBOMCP9.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126BAA)

SBOMCP1.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126BEA)

SBOMCO8.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126x2A)

SBOMCP3.ZIP (13 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126x3A)

SBOMCP5.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126x4A)

SBOMCO6.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126x5A)

SBOMCP4.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126x7A)

SBOMCP7.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126x8A)

SBOMCP8.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126xA1)

SBOMCJ7.ZIP (405 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 PSpice Model (for TMCS1126xDA)

SBOMCO7.ZIP (11 KB) - PSpice Model
模擬型號

TMCS1126 and TMCS1126-Q1 TINA-TI Reference Design

SBOMCP6.ZIP (294 KB) - TINA-TI Reference Design
模擬型號

TMCS1126 and TMCS1126-Q1 TINA-TI Spice Model (for TMCS1126x1A )

SBOMCJ8.ZIP (35 KB) - TINA-TI Spice Model
計算工具

CS-MAGNETIC-ERROR-TOOL-CALC Hall-Effect Current Sensor Comparison and Error Tool

Hall-Effect Current Sensor Comparison and Error Tool
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產品
霍爾效應電流感測器
TMCS1100 具有外部參考的 ±600V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1101-Q1 具有內部參考的 AEC-Q100、±600-V 精密隔離式電流感測器 TMCS1100-Q1 具有外部參考的 AEC-Q100、±600-V 精密隔離式電流感測器 TMCS1101 具有參考的 ±600V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1107 具有參考的 ±420V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1107-Q1 具有內部參考的 AEC-Q100、±420-V 隔離式霍爾效應電流感測器 TMCS1108 具有參考的 ±100V 基本隔離 20Arms 80kHz 霍爾效應電流感測器 TMCS1108-Q1 具有內部參考的 AEC-Q100、±100-V 隔離式霍爾效應電流感測器 TMCS1123 具有 AFR、參考及 ALERT 功能的 ±1300V 強化型隔離 80ARMS 250kHz 霍爾效應電流感測器 TMCS1123-Q1 具有 AFR 和 ALERT 功能的 AEC-Q100 80ARMS 霍爾效應電流感測器 TMCS1126 具有 AFR、參考和 ALERT 功能的 80ARMS、500kHz 霍爾效應電流感測器 TMCS1126-Q1 具有 AFR、參考和 ALERT 功能且符合 AEC-Q100 資格的 80ARMS 500kHz 霍爾效應電流感測器 TMCS1127 具有 AFR 功能的 80ARMS、250kHz 霍爾效應電流感測器 TMCS1127-Q1 具有 AFR 功能的 AEC-Q100 80ARMS、250kHz 霍爾效應電流感測器 TMCS1133 具有 AFR 和 ALERT 功能的 80ARMS、1MHz 霍爾效應電流感測器 TMCS1133-Q1 具有 AFR 和 ALERT 功能的車用 1MHz 霍爾效應電流感測器 TMCS1143 125ARMS 250kHz Hall-effect current sensor with AFR, reference, OCP and ALERT TMCS1148 具有 OCP、參考和 AFR 功能的 125ARMS、500kHz 霍爾效應電流感測器
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DVG) 10 Ultra Librarian

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  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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