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運算放大器 (op amps)
高速運算放大器 (GBW ≥ 50 MHz)

TLV365-Q1

現行

具軌至軌輸入和輸出的車用 50-MHz 單電源供電運算放大器

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產品規格表

TLV365-Q1

現行
產品規格表 立即訂購

產品詳細資料

Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 GBW (typ) (MHz) 50 BW at Acl (MHz) 80 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 27 Vn at flatband (typ) (nV√Hz) 4.5 Vn at 1 kHz (typ) (nV√Hz) 4.5 Iq per channel (typ) (mA) 4.6 Vos (offset voltage at 25°C) (max) (mV) 1.9 Rail-to-rail In, Out Features Zero Crossover Rating Automotive Operating temperature range (°C) -40 to 125 CMRR (typ) (dB) 115 Input bias current (max) (pA) 20 Offset drift (typ) (µV/°C) 0.4 Iout (typ) (mA) 85
Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 GBW (typ) (MHz) 50 BW at Acl (MHz) 80 Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 27 Vn at flatband (typ) (nV√Hz) 4.5 Vn at 1 kHz (typ) (nV√Hz) 4.5 Iq per channel (typ) (mA) 4.6 Vos (offset voltage at 25°C) (max) (mV) 1.9 Rail-to-rail In, Out Features Zero Crossover Rating Automotive Operating temperature range (°C) -40 to 125 CMRR (typ) (dB) 115 Input bias current (max) (pA) 20 Offset drift (typ) (µV/°C) 0.4 Iout (typ) (mA) 85
SOT-23 (DBV) 5 8.12 mm² (2.9 mm × 2.8 mm)
  • AEC-Q100 qualified
    • Temperature grade 1: –40°C to +125°C
  • Gain bandwidth: 50MHz
  • Zero-crossover distortion topology:
    • CMRR: 115dB (typical)
    • Rail-to-rail input and output
      • Input 100mV beyond supply rail
  • Noise: 4.5nV/√Hz
  • Slew rate: 27V/µs
  • Fast settling: 0.2µs to 0.01%
  • Precision:
    • Offset drift: 2.6µV/°C (maximum)
    • Input bias current: 20pA (maximum)
  • Operating voltage: 2.2V to 5.5V
  • AEC-Q100 qualified
    • Temperature grade 1: –40°C to +125°C
  • Gain bandwidth: 50MHz
  • Zero-crossover distortion topology:
    • CMRR: 115dB (typical)
    • Rail-to-rail input and output
      • Input 100mV beyond supply rail
  • Noise: 4.5nV/√Hz
  • Slew rate: 27V/µs
  • Fast settling: 0.2µs to 0.01%
  • Precision:
    • Offset drift: 2.6µV/°C (maximum)
    • Input bias current: 20pA (maximum)
  • Operating voltage: 2.2V to 5.5V

The TLV365-Q1 and TLV2365-Q1 (TLVx365-Q1) devices are a family of zero-crossover, rail-to-rail input and output, CMOS operational amplifiers, optimized for low voltage and cost-sensitive applications. Low-noise (4.5nV/√Hz) and high-speed operation (50MHz gain bandwidth) make these devices an excellent choice for driving sampling analog-to-digital converters (ADCs) in applications such as low-side current sensing, audio, signal conditioning, and sensor amplification.

Special features include an excellent common-mode rejection ratio (CMRR), no input stage crossover distortion, high input impedance, and rail-to-rail input and output swing. The input common-mode range includes both the negative and positive supplies. The output voltage swings to within 12mV of the rails.

The TLVx365-Q1 are specified for operation from −40°C to +125°C.

The TLV365-Q1 and TLV2365-Q1 (TLVx365-Q1) devices are a family of zero-crossover, rail-to-rail input and output, CMOS operational amplifiers, optimized for low voltage and cost-sensitive applications. Low-noise (4.5nV/√Hz) and high-speed operation (50MHz gain bandwidth) make these devices an excellent choice for driving sampling analog-to-digital converters (ADCs) in applications such as low-side current sensing, audio, signal conditioning, and sensor amplification.

Special features include an excellent common-mode rejection ratio (CMRR), no input stage crossover distortion, high input impedance, and rail-to-rail input and output swing. The input common-mode range includes both the negative and positive supplies. The output voltage swings to within 12mV of the rails.

The TLVx365-Q1 are specified for operation from −40°C to +125°C.
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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TLVx365-Q1 Automotive, 50MHz, Zero-Crossover, Low-Distortion, High-CMRR, RRI/O, Single-Supply Operational Amplifiers datasheet (Rev. C) PDF | HTML 2025/2/28
Application brief Quickly Detecting Overcurrent Faults With Low-Side Current Shunt Measurement Required for SiC or GaN Switches PDF | HTML 2024/8/14
功能安全資訊 TLV365-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 2024/3/15

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此參考設計為數位控制、氮化鎵 (GaN) 架構的四開關降壓升壓 DC/DC 轉換器，用於電池備援 (BBU) 應用。此設計共有七個相位。以並聯方式連接六個相位以進行電池放電作業，可提供高達 8.1kW 的放電功率。第七個相位用於電池充電作業。轉換器可根據 VIN 和 VOUT 電壓，以降壓、降壓升壓或升壓模式運作，並且可在各模式間平穩轉換。
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