TLE2064AM-D

現行

採用 SOIC -14 的軍用級、四路、36-V、2-MHz、輸入至 V+、1.5-mv 偏移電壓、JFET 輸入運算放大器

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OPA4991-EP 現行 強化型產品、四路、40-V、4.5-MHz、軌至軌輸入和輸出運算放大器 Rail-to-rail I/O, wider supply range (2.7 V to 40 V), higher GBW (4.5 MHz), lower maximum offset voltage (0.895 mV), lower noise (10.8 nV/√Hz)

TLE2064AM-D

現行

產品詳細資料

Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.4 Vos (offset voltage at 25°C) (max) (mV) 4 Iq per channel (typ) (mA) 0.312 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 6 Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.045 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 1.3 Output swing headroom (to positive supply) (typ) (V) -1.3
Number of channels 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.4 Vos (offset voltage at 25°C) (max) (mV) 4 Iq per channel (typ) (mA) 0.312 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Military Operating temperature range (°C) -55 to 125 Offset drift (typ) (µV/°C) 6 Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.045 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 1.3 Output swing headroom (to positive supply) (typ) (V) -1.3
SOIC (D) 14 51.9 mm² (8.65 mm × 6 mm)
  • Wide bandwidth: 1.1MHz GBW
  • Low supply current: 120µA/Ch (typical)
  • High output drive, specified into 100Ω loads
  • Lower noise floor than earlier generations of low-power BiFET
  • Wide bandwidth: 1.1MHz GBW
  • Low supply current: 120µA/Ch (typical)
  • High output drive, specified into 100Ω loads
  • Lower noise floor than earlier generations of low-power BiFET

The TLE206x is a family of high voltage (36V) FET-Input operational amplifiers. These devices offer good DC precision and AC performance. This includes low noise floor and high slew rate, making TLE206x family a flexible, general-performance amplifier. TLE206x are available in standard packages PDIP and SOIC.

The TLE206xM, TLE206xAM, TLE206xBM devices use the original design with JFET-input transistors and On-chip Zener trimming of offset voltage. The TLE206xM, TLE206xAM, TLE206xBM are available in CDIP, LCCC and CFP package.

The TLE206x is a family of high voltage (36V) FET-Input operational amplifiers. These devices offer good DC precision and AC performance. This includes low noise floor and high slew rate, making TLE206x family a flexible, general-performance amplifier. TLE206x are available in standard packages PDIP and SOIC.

The TLE206xM, TLE206xAM, TLE206xBM devices use the original design with JFET-input transistors and On-chip Zener trimming of offset voltage. The TLE206xM, TLE206xAM, TLE206xBM are available in CDIP, LCCC and CFP package.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 TLE206x,TLE206xA, TLE206xB FET-Input High-Output-Drive μPower Operational Amplifiers datasheet (Rev. D) PDF | HTML 2026/3/4
* SMD TLE2064AM-D SMD 5962-90809 2016/6/21
電子書 The Signal e-book: A compendium of blog posts on op amp design topics PDF | HTML 2017/3/28
應用說明 TLE206x/TLE206xA/TLE206xB EMI Immunity Performance 2013/6/9

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開發板

AMP-PDK-EVM — 放大器性能開發套件評估模組

放大器性能開發套件 (PDK) 是一款評估模組 (EVM) 套件,可測試通用運算放大器 (op amp) 參數,並與大多數運算放大器和比較器相容。EVM 套件提供主板和多個插槽式子卡選項,可滿足封裝需求,使工程師能夠快速評估和驗證裝置性能。

AMP-PDK-EVM 套件支援五種最熱門的業界標準封裝,包括:

  • D (SOIC-8 和 SOIC-14)
  • PW (TSSOP-14)
  • DGK (VSSOP-8)
  • DBV (SOT23-5 和 SOT23-6)
  • DCK (SC70-5 和 SC70-6)
使用指南: PDF | HTML
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