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LMG1020-Q1

現行
立即訂購
產品規格表

LMG1020-Q1

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 1 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
DSBGA (YBV) 6 1.1049 mm² (0.87 mm × 1.27 mm)
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.
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* 資料表 LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications datasheet PDF | HTML 2025/4/29

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LMG1020EVM-006 — LMG1020 GaN 低壓側驅動器 + GaN FET 光達評估模組

LMG1020EVM-006 是一款小型又容易使用的功率級產品，且具有 LIDAR 雷射驅動。EVM 包括整合式電阻負載（不包括雷射），並採用可緩衝（並進一步縮短）或直接傳遞至功率級的短脈衝輸入。電路板可展示用於高解析度 LIDAR 和 ToF 系統的奈秒雷射脈衝。
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