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LM9061

現行

7-V 至 26-V 高側保護控制器

產品詳細資料

Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Catalog Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Catalog Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM9061 and LM9061-Q1 High-Side Protection Controller datasheet (Rev. I) PDF | HTML 2017/1/4
電子書 11 Ways to Protect Your Power Path 2019/7/3

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LM9061EVM — LM9061EVM 高壓側保護控制器評估模組

LM9061EVM 評估模組展示在高壓側配置下,對所連接負載提供過電流與過電壓保護的功能。  ON/OFF 輸入可控制高壓側 MOSFET 的閘極驅動。過電流保護是透過監測 MOSFET 兩端的壓降 (VDS) 來執行,並將其與外部可編程的閾值電壓進行比較。  如果由於負載電流過大而使 VDS 電壓超過閾值電壓,負載會透過關閉 MOSFET 的閘極驅動,從輸入電源中斷連接。  保護電路不需要與負載串聯電流感測電阻器,因此可在高電流負載下達到更高的效率。

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