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LM74930-Q1

現行

具有斷路器與過電壓保護的車用 3-V 至 65-V 突波抑制器

產品詳細資料

Vin (max) (V) 65 Vin (min) (V) 4 FET External back-to-back FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Surge protection Iq (typ) (mA) 0.65 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Shutdown current (ISD) (mA) (A) 0.003 Product type Ideal diode controller
Vin (max) (V) 65 Vin (min) (V) 4 FET External back-to-back FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Surge protection Iq (typ) (mA) 0.65 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Shutdown current (ISD) (mA) (A) 0.003 Product type Ideal diode controller
VQFN (RGE) 24 16 mm² (4 mm × 4 mm)
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • 4-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common source configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast DGATE turn-off response (0.5 µs)
  • 18-mA peak gate (DGATE) turn on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overcurrent and short circuit protection
  • Analog current monitor output with 10% accuracy (IMON)
  • Adjustable overvoltage and undervoltage protection
  • Low 2.5-µA shutdown current (EN=Low)
  • MODE pin to allow bi-directional current flow (MODE=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 24-pin VQFN package

  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • 4-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common source configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast DGATE turn-off response (0.5 µs)
  • 18-mA peak gate (DGATE) turn on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overcurrent and short circuit protection
  • Analog current monitor output with 10% accuracy (IMON)
  • Adjustable overvoltage and undervoltage protection
  • Low 2.5-µA shutdown current (EN=Low)
  • MODE pin to allow bi-directional current flow (MODE=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 24-pin VQFN package

The LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier and power path ON and OFF control with over current and overvoltage protection. The wide input supply of 4 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated high side gate control (HGATE) drives the first MOSFET in the power path. The device allows load disconnect (ON and OFF control) in case of overcurrent, overvoltage and undervoltage event using HGATE control while ideal diode controller (DGATE) drives a second MOSFET to replace a Schottky diode for input reverse polarity protection and output voltage holdup by blocking the reverse current from output to input. The device has integrated current sense amplifier which provides with an adjustable overcurrent and short circuit protection with circuit breaker functionality. The device features an adjustable overvoltage and undervoltage protection feature to protect against supply transients. LM74930-Q1 features MODE pin which can be used to selectively enable or disable reverse current blocking functionality.

The LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier and power path ON and OFF control with over current and overvoltage protection. The wide input supply of 4 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated high side gate control (HGATE) drives the first MOSFET in the power path. The device allows load disconnect (ON and OFF control) in case of overcurrent, overvoltage and undervoltage event using HGATE control while ideal diode controller (DGATE) drives a second MOSFET to replace a Schottky diode for input reverse polarity protection and output voltage holdup by blocking the reverse current from output to input. The device has integrated current sense amplifier which provides with an adjustable overcurrent and short circuit protection with circuit breaker functionality. The device features an adjustable overvoltage and undervoltage protection feature to protect against supply transients. LM74930-Q1 features MODE pin which can be used to selectively enable or disable reverse current blocking functionality.

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重要文件 類型 標題 格式選項 下載最新的英文版本 日期
* 資料表 LM74930-Q1 Automotive Ideal Diode Surge Stopper With Circuit Breaker, Overvoltage Protection, and Fault Output datasheet PDF | HTML 2023/10/31
應用說明 Achieving Functional Safety Goals for DC/DC Converters Using PDF | HTML 2026/5/22
功能安全資訊 LM74930-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2024/10/16
Application brief Protection against Unsuppressed Load Dump in Automotive Systems using LM74930-Q1 PDF | HTML 2023/11/14
證書 LM74930Q1EVM EU Declaration of Conformity (DoC) PDF | HTML 2023/10/5

設計與開發

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開發板

LM74930Q1EVM — 適用於具有斷路器的 3-V 至 65-V 突波抑制器的 LM74930-Q1 評估模組

在反向電池保護應用中,LM74930-Q1 評估模組 (EVM) 是一個可評估 LM74930-Q1 理想二極體控制器的運作及性能的平台。LM74930Q1EVM 可展示 LM74930-Q1 如何控制兩個背對背 N 通道功率 MOSFET,以模擬具有突波抑制器、斷路器和過電壓防護的理想二極體整流器。

使用指南: PDF | HTML
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模擬型號

LM74930-Q1 PSpice Transient Model

SNOM787.ZIP (73 KB) - PSpice 模型
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計算工具

LM74930-CALC — Design calculator for LM74930-Q1 ideal diode controller

The design calculator allows user to size the external peripheral components while designing with LM74930-Q1 ideal diode controller
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參考設計

PMP23468 — 適用於音訊系統的 48V 輸入、875W 峰值功率、多相降壓轉換器參考設計

此參考設計可為汽車音響系統提供防護與電源。使用 48VDC 輸入,在整個輸出電壓範圍內進行了作業測試:6VDC 至 35VDC。此設計在額定負載下展現 97% 的峰值效率,並且在 6VDC 與 35VDC 之間的負載轉換中,輸出電壓沒有明顯的未達目標和過衝。此測試報告包含輸出電壓範圍與負載的操作資料,其中包括波德圖、切換波形、負載暫態響應、啟動與關機波形,以及熱成像。

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參考設計

TIDA-020106 — 機電煞車 (EMB) 參考設計

機電煞車 (EMB) 是一種旨在推動汽車電氣化與智慧化的新型煞車技術,能為高階自動駕駛提供更低的整體成本、更快的反應速度與更精準的操控。本參考設計展示了完整的全功能 EMB 設計。本指南詳細說明了硬體、軟體以及功能安全設計。由於電子動力轉向系統 (EPS) 的關鍵零組件與 EMB 極為相似,因此本參考設計亦可作為 EPS 的設計參考。

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
VQFN (RGE) 24 Ultra Librarian

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