LM74910-Q1
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: –40°C to +125°C ambient operating temperature range
- Functional Safety-Capable
- 3V to 65V input range
- 74V Absolute Maximum Rating for LM74910H-Q1
- Reverse input protection down to –65V
- Drives external back-to-back N-Channel MOSFETs in common drain configuration
- Ideal diode operation with 10.5mV A to C forward voltage drop regulation
- Low reverse detection threshold (–10.5mV) with fast turn off response (0.5µs)
- 20mA peak gate (DGATE) turn on current
- 2.6A peak DGATE turnoff current
- Adjustable overcurrent and short circuit protection
- Analog current monitor output with 2% accuracy for LM74910H-Q1
- Adjustable overvoltage and undervoltage protection
- SLEEP mode OCP Retry in LM74910H-Q1
- Low 2.5µA shutdown current (EN=Low)
- SLEEP mode with 6µA current (EN=High, SLEEP=Low)
- Meets automotive ISO7637 transient requirements with a suitable TVS diode
- Available in space saving 24-pin VQFN package
The LM749x0-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide input supply of 3V to 65V allows protection and control of 12V and 24V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra-low quiescent current consumption (6µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM749x0-Q1 has a maximum voltage rating of 65V.
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技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LM749x0-Q1 Automotive Ideal Diode With Circuit Breaker, Undervoltage, and Overvoltage Protection With Fault Output datasheet (Rev. C) | PDF | HTML | 2025/8/12 | ||
| 功能安全資訊 | LM749x0-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. A) | PDF | HTML | 2026/3/30 | |||
| 測試報告 | Power Delivery Reference Design for AMD Versal™ AI Edge Series | PDF | HTML | 2024/3/25 | |||
| 應用說明 | Power Supply Design for AMD Versal™ AI Edge Series | PDF | HTML | 2024/1/29 | |||
| 應用說明 | Addressing Automotive Reverse Battery Protection Topologies with LM749x0-Q1 | PDF | HTML | 2023/6/13 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
LM74900Q1EVM — 適用於理想二極體控制器的 LM74900-Q1 評估模組
在反向電池保護應用中,LM74900-Q1 評估模組可評估 LM74900-Q1 理想二極體控制器的運作及性能。此評估模組示範 LM74900-Q1 如何控制兩個背對背 N 通道電源 MOSFET,模擬具有電源路徑開/關控制、過電流和過電壓防護的理想二極體整流器。
LM749X0-CALC — Design calculator for LM74900-Q1 and LM74910-Q1 devices
PMP23227 — 適用於 AMD Versal™ Edge AI 系列的電力傳輸參考設計
此參考設計展示了 VE2302 裝置所需的電源軌如何由 TI 的穩壓器 IC 供電。AMD 的最小供應器電源軌電力整合。請參見 AMD 的 Power Design Manager (PDM) 工具,以了解所有可用的電源整合選項。在預估任何應用的功率時,請使用 PDM。此參考設計使用範例功率估計。設計 AI Edge 系列其他裝置的電源樹狀架構時,也可使用此設計作為基礎。此系統的原始電源通常介於 8VIN 至 18VIN 之間,並可提供約 50W 的功率。
TIPA-020007 — 適用於 AMD® Versal™ AI Edge 系列第二代的電源供應概念驗證設計
此概念驗證電源設計展示如何透過 TI 穩壓器積體電路 (IC) 為 2VE3858 裝置所需的電源軌供電。此設計方法符合 AMD® 標準,可將整合的電源供應軌數量減至最少。請參閱 AMD Power Design Manager (PDM) 工具頁面,了解所有可用的電源整合選項。對於任何應用,請使用預估功率時實作的 PDM。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。