TRF0108-SEP

활성

방사능 저항, DC에 가까운 주파수부터 12GHz 주파수까지 지원, D2S(차동→단일 종단) RF 증폭기

제품 상세 정보

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.2, 15.5 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 27 P1dB (typ) (dBm) 11.4 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -50 OIP2 (typ) (dBm) 43 2nd harmonic (dBc) -49 Supply voltage (V) 5 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.2, 15.5 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 27 P1dB (typ) (dBm) 11.4 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -50 OIP2 (typ) (dBm) 43 2nd harmonic (dBc) -49 Supply voltage (V) 5 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
— (—) See data sheet
  • Vendor item drawing number: VID V62/26604
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA
  • Vendor item drawing number: VID V62/26604
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA

The TRF0108-SEP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SEP or AFE7950-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SEP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.

The TRF0108-SEP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SEP or AFE7950-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SEP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.

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기술 자료

star =TI에서 선정한 이 제품의 인기 문서
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4개 모두 보기
상위 문서 유형 직함 형식 옵션 날짜
* Data sheet TRF0108-SEP Radiation-Tolerant, Near-DC to 12GHz, Differential to Single-Ended RF Amplifier datasheet PDF | HTML 2025/12/23
* Radiation & reliability report TRF0108-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 2026/03/30
* Radiation & reliability report TRF0108-SEP Total Ionizing Dose (TID) Report 2026/03/30
Selection guide TI Space Products (Rev. L) 2026/03/27

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

시뮬레이션 모델

TRF0108-SEP S-Parameter Model

SLOM539.ZIP (8 KB) - S-Parameter Model
계산 툴

RF-CASCADE-CALC-TOOL TI RF Cascade Calculator

A browser-based RF lineup analysis tool supporting up to 10 stages. Computes gain, NF, OIP3, OIP2, OP1dB, and derived metrics. Features dual-axis Plotly charts, P1dB saturation detection, and export to CSV
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레퍼런스 디자인

TIDA-010274 — 우주 등급 개별 RF 샘플링 트랜시버 레퍼런스 설계

이 레퍼런스 설계에는 10GSPS 듀얼 디지털-아날로그 컨버터와 최대 X-대역을 지원하는 RF 인터페이스의 액티브 발룬을 갖춘 5GSPS 듀얼 아날로그-디지털 컨버터가 통합되어 있습니다. 또한 설계에는 우주 항공 등급 클로킹 도터 카드와 우주 항공 등급 전원 솔루션 도터 카드가 통합되어 있습니다.
Design guide: PDF
패키지 CAD 기호, 풋프린트 및 3D 모델
— (—)

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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