전력 관리 멀티 채널 IC(PMIC)

TPS53317A

활성

0.9V~6V 입력, 6A 출력, D-CAP+ 모드, DDR VTT용 SWIFT 동기 스텝다운 컨버터

제품 상세 정보

Product type DDR Vin (min) (V) 0.9 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Eco Mode, Fixed PWM Mode, Power good, Tracking/Non-Tracking Mode Rating Catalog Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.32 DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
Product type DDR Vin (min) (V) 0.9 Vin (max) (V) 6 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features Eco Mode, Fixed PWM Mode, Power good, Tracking/Non-Tracking Mode Rating Catalog Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.32 DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
VQFN (RGB) 20 14 mm² (4 mm × 3.5 mm)
  • TI-Proprietary Integrated MOSFET and Packaging Technology
  • Supports DDR Memory Termination with up to 6-A Continuous Output Source or Sink Current
  • External Tracking
  • Minimum External Components Count
  • to 6-V Conversion Voltage
  • D-CAP+ Mode Architecture
  • Supports All MLCC Output Capacitors and SP/POSCAP
  • Selectable SKIP Mode or Forced CCM
  • Optimized Efficiency at Light and Heavy Loads
  • Selectable 600-kHz or 1-MHz Switching Frequency
  • Selectable Overcurrent Limit (OCL)
  • Overvoltage, Over-Temperature and Hiccup Undervoltage Protection
  • Adjustable Output Voltage from to 2 V
  • 3.5 mm × 4 mm, 20-Pin, VQFN Package
  • TI-Proprietary Integrated MOSFET and Packaging Technology
  • Supports DDR Memory Termination with up to 6-A Continuous Output Source or Sink Current
  • External Tracking
  • Minimum External Components Count
  • to 6-V Conversion Voltage
  • D-CAP+ Mode Architecture
  • Supports All MLCC Output Capacitors and SP/POSCAP
  • Selectable SKIP Mode or Forced CCM
  • Optimized Efficiency at Light and Heavy Loads
  • Selectable 600-kHz or 1-MHz Switching Frequency
  • Selectable Overcurrent Limit (OCL)
  • Overvoltage, Over-Temperature and Hiccup Undervoltage Protection
  • Adjustable Output Voltage from to 2 V
  • 3.5 mm × 4 mm, 20-Pin, VQFN Package

The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQ with both sink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external component count and fast transient response. The device can also be used for other point-of-load (POL) regulation applications requiring up to 6 A. In addition, the device supports full, 6-A, output sinking current capability with tight voltage regulation.

The device features two switching frequency settings (600 kHz and 1 MHz), integrated droop support, external tracking capability, pre-bias startup, output soft discharge, integrated bootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic and SP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V.

The device is available in the 3.5 mm × 4 mm, 20-pin, VQFN package (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.

For all available packages, see the orderable addendum at the end of the data sheet.

The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQ with both sink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external component count and fast transient response. The device can also be used for other point-of-load (POL) regulation applications requiring up to 6 A. In addition, the device supports full, 6-A, output sinking current capability with tight voltage regulation.

The device features two switching frequency settings (600 kHz and 1 MHz), integrated droop support, external tracking capability, pre-bias startup, output soft discharge, integrated bootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic and SP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V.

The device is available in the 3.5 mm × 4 mm, 20-pin, VQFN package (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.

For all available packages, see the orderable addendum at the end of the data sheet.

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기술 자료

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상위 문서 유형 직함 형식 옵션 최신 영어 버전 다운로드 날짜
* 데이터 시트 TPS53317A 6-A Output, D-CAP+ Mode, Synchronous Step-Down, Integrated-FET Converter for DDR Memory Termination datasheet (Rev. A) PDF | HTML 2015. 11. 10
애플리케이션 노트 Point-of-Load Solutions for Data Center App Implementing VR13.HC Vccin Spec (Rev. A) PDF | HTML 2020. 1. 8
기술 문서 Voltage regulator features – inside the black box PDF | HTML 2016. 5. 31
기술 문서 Simplifying loop compensation and poles and zeros calculations PDF | HTML 2016. 3. 18

설계 및 개발

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평가 보드

TPS53317AEVM-726 — DDR VTT용 동기 스텝다운 컨버터 평가 모듈

The TPS53317AEVM-726 is designed to demonstrate the TPS53317A in a typical low voltage application, simulating a DDR4 enviroment, while providing a number of test points to evaluate the performance of TPS53317A. The TPS53317AEVM-726 is designed to use a 1.2-V voltage rail to produce a regulated (...)

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시뮬레이션 모델

TPS53317A PSpice Transient Model

SLUM499.ZIP (130 KB) - PSpice 모델
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레퍼런스 디자인

PMP11399 — 엔터프라이즈 이더넷 스위치 레퍼런스 설계를 위한 PMBus 전원 시스템

PMP11399는 일반적으로 고성능 이더넷 스위치에서 볼 수 있는 3개의 ASIC/FPGA 코어, DDR3 코어 메모리, VTT 종단 및 보조 전압을 위한 완전한 PMBus 전원 시스템입니다. 하드웨어에는 GUI가 함께 제공되며, 사용자는 이를 통해 전원 공급 장치의 실시간 구성 및 모니터링을 수행할 수 있습니다.

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