TLE2024B

구형

Excalibur 고속 저전력 정밀 쿼드 연산 증폭기

제품 상세 정보

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SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Supply current: 300µA, max
  • High unity-gain bandwidth: 2MHz
  • High slew rate: 0.65V/µs
  • Specified for both 5V single-supply and ±15V operation
  • Phase-reversal protection
  • High open-loop gain: 6.5V/µV (136dB)
  • Low offset voltage: 100µV, max
  • Low input bias current: 50nA, max
  • Low noise voltage: 19nV/√Hz
  • Supply current: 300µA, max
  • High unity-gain bandwidth: 2MHz
  • High slew rate: 0.65V/µs
  • Specified for both 5V single-supply and ±15V operation
  • Phase-reversal protection
  • High open-loop gain: 6.5V/µV (136dB)
  • Low offset voltage: 100µV, max
  • Low input bias current: 50nA, max
  • Low noise voltage: 19nV/√Hz

The TLE2021, TLE2022, and TLE2024 (TLE202x) devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments state-of-the art bipolar process. These devices combine the best features of the OP21, with a highly improved slew rate and unity-gain bandwidth.

The complementary bipolar process uses isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. Therefore, a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices an excellent choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs is less than the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to +85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to +125°C.

The TLE2021, TLE2022, and TLE2024 (TLE202x) devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments state-of-the art bipolar process. These devices combine the best features of the OP21, with a highly improved slew rate and unity-gain bandwidth.

The complementary bipolar process uses isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. Therefore, a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices an excellent choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs is less than the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to +85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to +125°C.

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* Data sheet TLE202x High-Speed, Low-Power, Bipolar Precision Operational Amplifiers datasheet (Rev. A) PDF | HTML 2026/04/13

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치