SN74LVC1G38

활성

오픈 드레인 출력을 지원하는 단일 2입력, 1.65V~5.5V NAND 게이트

지금 주문하기

데이터 시트

document-pdfAcrobat SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output datasheet (Rev. G) (영어) PDF | HTML

SN74LVC1G38

활성

지금 주문하기

제품 상세 정보

Technology family

LVC

Number of channels

1

Inputs per channel

2

IOL (max) (mA)

32

IOH (max) (mA)

0

Input type

Standard CMOS

Output type

Open-drain

Features

Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns)

Data rate (max) (Mbps)

100

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Technology family

LVC

Number of channels

1

Inputs per channel

2

IOL (max) (mA)

32

IOH (max) (mA)

0

Input type

Standard CMOS

Output type

Open-drain

Features

Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns)

Data rate (max) (Mbps)

100

Rating

Catalog

Operating temperature range (°C)

-40 to 125

SOT-23 (DBV)

5

8.12 mm² (2.9 mm × 2.8 mm)

SOT-SC70 (DCK)

5

4.2 mm² (2 mm × 2.1 mm)

X2SON (DPW)

5

0.64 mm² (0.8 mm × 0.8 mm)

USON (DRY)

6

1.45 mm² (1.45 mm × 1 mm)

X2SON (DSF)

6

1 mm² (1 mm × 1 mm)

Latch-up performance exceeds 100 mA Per JESD 78, Class II
ESD protection exceeds JESD 22
- 2000-V Human-body model (A114-A)
- 200-V Machine model (A115-A)
- 1000-V Charged-device model (C101)
Available in the Texas Instruments
NanoStar™ and NanoFree™ Packages
Supports 5-V V_CC operation
Inputs accept voltages to 5.5 V
Supports down translation to V_CC
Maximum t_pd of 4.5 ns at 3.3 V
Low power consumption, 10-µA maximum I_CC
±24-mA Output drive at 3.3 V
I_off Supports partial-power-down mode and back-drive protection

Latch-up performance exceeds 100 mA Per JESD 78, Class II
ESD protection exceeds JESD 22
- 2000-V Human-body model (A114-A)
- 200-V Machine model (A115-A)
- 1000-V Charged-device model (C101)
Available in the Texas Instruments
NanoStar™ and NanoFree™ Packages
Supports 5-V V_CC operation
Inputs accept voltages to 5.5 V
Supports down translation to V_CC
Maximum t_pd of 4.5 ns at 3.3 V
Low power consumption, 10-µA maximum I_CC
±24-mA Output drive at 3.3 V
I_off Supports partial-power-down mode and back-drive protection

The SN74LVC1G38 device is designed for 1.65-V to 5.5-V V_CC operation.

This device is a single two-input NAND buffer gate with open-drain output. It performs the Boolean function Y = A × B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

The SN74LVC1G38 device is designed for 1.65-V to 5.5-V V_CC operation.

This device is a single two-input NAND buffer gate with open-drain output. It performs the Boolean function Y = A × B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

filter

기타 NAND 게이트 찾기

다운로드 스크립트와 함께 비디오 보기 비디오

관심 가지실만한 유사 제품

open-in-new

대안 비교

비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀.

SN74AHC1G09-Q1

활성

차량용 1채널, 2입력, 2V~5.5V 고속(9ns) AND 게이트, 오픈 드레인 출력 지원 Voltage range 2V to 5.5V, average propagation delay 12ns, average drive strength 9mA

기술 자료

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2개 모두 보기

상위 문서	유형	직함	형식 옵션	최신 영어 버전 다운로드		날짜
*	데이터 시트	SN74LVC1G38 Single 2-Input NAND Gate With Open-Drain Output datasheet (Rev. G)	PDF \| HTML		2018. 11. 8
	애플리케이션 노트	Designing and Manufacturing with TI's X2SON Packages			2017. 8. 23