전력 관리 전원 보호 스위치 및 컨트롤러 이상적인 다이오드 및 오링 컨트롤러

LM74912-Q1

활성

일체형 과전압 및 단락 보호 기능(오류 출력)이 있는 오토모티브에 이상적인 다이오드

제품 상세 정보

Vin (max) (V) 65 Vin (min) (V) 3 FET External back-to-back FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Under voltage lock out Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Shutdown current (ISD) (mA) (A) 0.00287 Product type Ideal diode controller
Vin (max) (V) 65 Vin (min) (V) 3 FET External back-to-back FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Under voltage lock out Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Shutdown current (ISD) (mA) (A) 0.00287 Product type Ideal diode controller
VQFN (RGE) 24 16 mm² (4 mm × 4 mm)
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overvoltage and undervoltage protection
  • Output short circuit protection with MOSFET latched off state
  • Ultra low power mode with 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
  • Available in 4 mm × 4 mm 24-pin VQFN package
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overvoltage and undervoltage protection
  • Output short circuit protection with MOSFET latched off state
  • Ultra low power mode with 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
  • Available in 4 mm × 4 mm 24-pin VQFN package

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.

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기술 자료

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* 데이터 시트 LM74912-Q1 Automotive Ideal Diode Controller With Fault Output and Overvoltage, Undervoltage, and Short Circuit Protection datasheet (Rev. A) PDF | HTML 2023. 9. 20
애플리케이션 노트 Improving Accuracy of Shunt-Less Short Circuit Protection in Wide Temperature Range Using LM74912-Q1 PDF | HTML 2025. 9. 17
기능 안전 정보 LM74912-Q1 Functional safety FIT rate, FMD and Pin-FMA PDF | HTML 2025. 2. 18
Application brief Enabling Ultra Low Quiescent Current Through LM74912- Q1 Sleep Mode While Powering Always On Loads PDF | HTML 2023. 12. 11
인증서 LM74912Q1EVM EU Declaration of Conformity (DoC) 2023. 6. 26

설계 및 개발

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평가 보드

LM74912Q1EVM — LM74912-Q1 이상적인 다이오드 컨트롤러를 위한 평가 모듈

LM74912-Q1 평가 모듈은 역방향 배터리 보호 애플리케이션에서 LM74912-Q1 최적 다이오드의 작동 및 성능을 평가합니다. 이 평가 모듈은 LM74912-Q1이 전원 경로 ON/OFF 제어, 출력 단락 및 과전압 보호를 지원하는 최적 다이오드 정류기를 에뮬레이션하기 위해 2개의 백-백 N-채널 전원 MOSFET을 제어하는 방법을 보여줍니다.

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시뮬레이션 모델

LM74912-Q1 PSpice Transient Model

SNOM786.ZIP (118 KB) - PSpice 모델
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계산 툴

LM74912-CALC — Design calculator for LM74912-Q1 ideal diode controller

The design calculator allows user to size the external peripheral components while designing with LM74912-Q1 ideal diode controller
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레퍼런스 디자인

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이 설계는 듀얼 출력 컨버터로 사용할 수 있는 저 EMI 이중 위상 벅 컨버터를 보여줍니다. 2상 컨버터로서 이 회로는 12V~5V 구성에서 30A 피크로 22A의 연속 출력 전류를 제공할 수 있습니다.
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