ISOS510-SP
- Radiation Performance
- Total Ionizing Dose (TID) characterized up to 100krad(Si)
- TID RLAT/RHA up to 100krad(Si)
- Single-Event Latch-up (SEL) Immune to LET up to 75MeV-cm2/mg at 125℃
- Single-event transient (SET) characterized LET up to 75MeV-cm2/mg
- SMD# 5962R2620601PXE
- QML Class
P
- Meets NASA ASTM E595 Outgassing Spec
- Military Temp Range (-55℃ to 125℃)
- 1-channel diode input
- Current transfer ratio (CTR) at IF = 5mA, VCE = 5V: 95% to 164%
- High collector-emitter voltage: VCE (max) = 30V
- Robust SiO2 isolation barrier
- Isolation rating: 3750VRMS
- Working voltage: 500VRMS, 707VPK
- Surge capability: up to 10kV
- Response time: 3µs (typical) at VCE = 10V, IC = 2mA, RL = 100Ω
- Small 4-pin package (DFG)
The ISOS510-SPradiation-hardened device is a single-channel, current-driven, analog isolator with transistor output. The device offers significant reliability and performance advantages compared to other current-driven analog isolators, including high bandwidth, low turn-off delay, low power consumption, wider temperature ranges, flat current transfer ratio (CTR), and tight process controls resulting in small part-to-part skew. These performance advantages stay stable across radiation, temperature, and lifetime.
ISOS510-SP is offered in small a SOIC-4 package with 2.54mm pin pitch, supporting a 3.75kVRMS isolation rating . The high performance and reliability of ISOS510-SP enables these devices to be used in aerospace and defense applications such as feedback loops in isolated DC/DC modules, satellite propulsion power processing units, spacecraft battery management systems, and more.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | ISOS510-SP Radiation Hardened , Current-Driven Analog Isolator With Transistor Output datasheet | PDF | HTML | 2026. 5. 4 |
설계 및 개발
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ISOM-EVM — 범용 옵토 에뮬레이터 평가 모듈
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| SOIC (DFG) | 4 | Ultra Librarian |
주문 및 품질
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