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INA1H94-SEP

활성

Radiation-tolerant, high common-mode voltage difference amplifier

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데이터 시트

document-pdfAcrobat INA1H94-SEP Radiation-Tolerant, High Common-Mode Voltage Difference Amplifier datasheet (영어) PDF | HTML

INA1H94-SEP

활성

지금 주문하기

제품 상세 정보

Number of channels

1

Vs (min) (V)

4

Vs (max) (V)

18

CMRR (min) (dB)

84

Common-mode input low (min) (V)

-150

Common-mode input high (max) (V)

150

Input offset (±) (max) (V)

0.0035

Iq (typ) (mA)

0.81

Slew rate (typ) (V/µs)

5

Voltage gain (min) (V/V)

1

Voltage gain (max) (V/V)

1

Small-signal bandwidth (typ) (Hz)

500000

Rating

Space

Operating temperature range (°C)

-55 to 125

Gain error (±) (max) (%)

0.65

Number of channels

1

Vs (min) (V)

4

Vs (max) (V)

18

CMRR (min) (dB)

84

Common-mode input low (min) (V)

-150

Common-mode input high (max) (V)

150

Input offset (±) (max) (V)

0.0035

Iq (typ) (mA)

0.81

Slew rate (typ) (V/µs)

5

Voltage gain (min) (V/V)

1

Voltage gain (max) (V/V)

1

Small-signal bandwidth (typ) (Hz)

500000

Rating

Space

Operating temperature range (°C)

-55 to 125

Gain error (±) (max) (%)

0.65

SOIC (D)

8

29.4 mm² (4.9 mm × 6 mm)

Radiation tolerant
- Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
- ELDRS-free up to TID = 30krad(Si)
- Single event latch-up (SEL) immune to 43MeV×cm2 /mg
- Single event effect (SEE) characterized to 43MeV×cm2 /mg
Space enhanced plastic
- Supports defense and aerospace applications
- Controlled baseline
- One assembly and test site
- One Fabrication site
- Extended product life cycle
- Product traceability
- Outgassing test performed per ASTM E595
- Au bondwire and NiPdAu lead finish
Common-mode voltage range: ±150V
Minimum CMRR: 84dB from –55°C to +125°C
DC specifications:
- Maximum gain error: 0.067%
- Typical gain error drift: 1.5ppm/°C
- Typical gain nonlinearity: 0.0005% FSR
AC performance:
- Small-signal bandwidth: 500kHz
- Typical slew rate: 5V/µs
Wide supply range: ±2V to ±9V

Radiation tolerant
- Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
- ELDRS-free up to TID = 30krad(Si)
- Single event latch-up (SEL) immune to 43MeV×cm2 /mg
- Single event effect (SEE) characterized to 43MeV×cm2 /mg
Space enhanced plastic
- Supports defense and aerospace applications
- Controlled baseline
- One assembly and test site
- One Fabrication site
- Extended product life cycle
- Product traceability
- Outgassing test performed per ASTM E595
- Au bondwire and NiPdAu lead finish
Common-mode voltage range: ±150V
Minimum CMRR: 84dB from –55°C to +125°C
DC specifications:
- Maximum gain error: 0.067%
- Typical gain error drift: 1.5ppm/°C
- Typical gain nonlinearity: 0.0005% FSR
AC performance:
- Small-signal bandwidth: 500kHz
- Typical slew rate: 5V/µs
Wide supply range: ±2V to ±9V

The INA1H94-SEP is a radiation-hardened precision unity-gain difference amplifier with a very high input common-mode voltage range. The INA1H94-SEP is a single, monolithic device that consists of a precision op amp and an integrated thin-film resistor network. The INA1H94-SEP can accurately measure small differential voltages in the presence of common-mode signals up to ±150V.

In many applications where galvanic isolation in not required, the INA1H94-SEP can replace isolation amplifiers. The INA1H94-SEP can help eliminate costly isolated input side power supplies, along with the associated ripple, noise, and quiescent current. The excellent 0.0005% typical nonlinearity, high common-mode, and 500kHz bandwidth of the INA1H94-SEP makes for a compelling sensor readout device.

The INA1H94-SEP is a radiation-hardened precision unity-gain difference amplifier with a very high input common-mode voltage range. The INA1H94-SEP is a single, monolithic device that consists of a precision op amp and an integrated thin-film resistor network. The INA1H94-SEP can accurately measure small differential voltages in the presence of common-mode signals up to ±150V.

In many applications where galvanic isolation in not required, the INA1H94-SEP can replace isolation amplifiers. The INA1H94-SEP can help eliminate costly isolated input side power supplies, along with the associated ripple, noise, and quiescent current. The excellent 0.0005% typical nonlinearity, high common-mode, and 500kHz bandwidth of the INA1H94-SEP makes for a compelling sensor readout device.

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6개 모두 보기

상위 문서	유형	직함	형식 옵션
*	데이터 시트	INA1H94-SEP Radiation-Tolerant, High Common-Mode Voltage Difference Amplifier datasheet	PDF \| HTML	2025. 12. 18
*	방사능 및 안정성 보고서	INA1H94-SEP Production Flow and Reliability Report	PDF \| HTML	2025. 12. 8
*	방사능 및 안정성 보고서	INA1H94-SEP Radiation-Tolerant, High Common-Mode Voltage Difference Amplifier TID Report		2025. 12. 5
*	방사능 및 안정성 보고서	INA1H94-SEP Single-Event Effects (SEE) Radiation Report	PDF \| HTML	2025. 12. 3
	Product overview	GEO 및 LEO 플랫폼의 전압 및 고압측 전류 센싱을 위한 ±150V 공 통 모드 차동 증폭기	PDF \| HTML	2026. 5. 5
	선택 가이드	TI Space Products (Rev. L)		2026. 3. 27

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INA1H94-SEP

Radiation-tolerant, high common-mode voltage difference amplifier

INA1H94-SEP

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