Home Energiemanagement Gate-Treiber Low-Side-Treiber

UCC27624

AKTIV

2-Kanal-Low-Side-Treiber, 5 A/5 A, mit 4 V UVLO, 30 V VDD und geringer Ausbreitungsverzögerung

Produktdetails

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm) VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm) WSON (DSD) 8 9 mm² (3 mm × 3 mm) HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm)
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute maximum VDD voltage: 30V
  • Wide VDD operating range from 4.5V to 26V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 PowerPAD™ and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute maximum VDD voltage: 30V
  • Wide VDD operating range from 4.5V to 26V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 PowerPAD™ and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C

The UCC27624 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shutoff by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse transformer and avoid driver malfunction.

The UCC27624 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

The UCC27624 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shutoff by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse transformer and avoid driver malfunction.

The UCC27624 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC27624 30V, 5A, Dual-Channel, Low-Side Gate Driver with –10V Input Capability datasheet (Rev. E) PDF | HTML 23.03.2026
Product overview UCC27624: Enabling Higher Efficiency in a Smaller Package (Rev. A) PDF | HTML 29.05.2026
Anwendungshinweis Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML 07.11.2025
Anwendungshinweis Why use a Gate Drive Transformer? PDF | HTML 04.03.2024
Anwendungshinweis Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 22.01.2024
Anwendungshinweis Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22.01.2024
Technischer Artikel Managing power-supply noise with a 30-V gate driver PDF | HTML 07.12.2021
Anwendungshinweis Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10.11.2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Anwendungshinweis Improving Efficiency of DC-DC Conversion through Layout 07.05.2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18.01.2019
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 26.11.2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16.03.2018

Design und Entwicklung

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Evaluierungsplatine

UCC27624DGNEVM — UCC27624-Evaluierungsmodul für zweikanaligen 30-V-, 5-A-Hochgeschwindigkeits-Low-Side-Gate-Treiber

Das Evaluierungsmodul (EVM) UCC27624 ist zur Evaluierung von Einkanal-Gate-Treibern für 30 V und 5 A konzipiert. Mit diesem EVM kann der Treiber-IC anhand der im Datenblatt angegebenen Parameter evaluiert werden. Der Treiber-IC kann im Hinblick auf verschiedene kapazitive und ohmsche Lasten (...)

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Evaluierungsplatine

UCC27624EVM — UCC27624-Evaluierungsmodul für zweikanaligen 30-V-, 5-A-Hochgeschwindigkeits-Lowside-Gate-Treiber

Das Evaluierungsmodul (EVM) UCC27624 ist zur Evaluierung von Einkanal-Gate-Treibern von TI für 30 V und 5 A konzipiert. Mit diesem EVM kann der Treiber-IC anhand der im Datenblatt angegebenen Parameter evaluiert werden. Der Treiber-IC kann im Hinblick auf verschiedene kapazitive und ohmsche Lasten (...)

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Simulationsmodell

UCC27624 PSpice Transient Model

SLUM884.ZIP (32 KB) - PSpice-Modell
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Simulationsmodell

UCC27624 SIMPLIS Model

SLUM795.ZIP (34 KB) - SIMPLIS-Modell
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Berechnungstool

SLURB18 — UCC27624 Schematic Review Template

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Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
SOIC (D) 8 Ultra Librarian
HSOIC (DDA) 8 Ultra Librarian
VSSOP (DGK) 8 Ultra Librarian
WSON (DSD) 8 Ultra Librarian
HVSSOP (DGN) 8 Ultra Librarian

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