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UCC27511

AKTIV

4-A/8-A-Einkanal-Gate-Treiber mit 5-V-UVLO, geteilten Ausgängen und 13-ns-Prop Verzögerung

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UCC27511A AKTIV Einkanal-Gate-Treiber mit 4 A/8 A mit 5-V-UVLO, geteilten Ausgängen, 5-V-IN-Handhabung More recent version with better negative voltage handling on the inputs.

UCC27511

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Inverting, Non-Inverting
SOT-23 (DBV) 6 8.12 mm² (2.9 mm × 2.8 mm)
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical
    Drive
  • Strong Sink Current Offers Enhanced Immunity
    Against Miller Turnon
  • Split Output Configuration (Allows Easy and
    Independent Adjustment of Turnon and Turnoff
    Speeds) in the UCC27511 Saves 1 Diode
  • Fast Propagation Delays (13-ns Typical)
  • Fast Rise and Fall Times (9-ns and 7-ns Typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power
    Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual-Input Design (Choice of an Inverting
    (IN– Pin) or Noninverting (IN+ Pin)
    Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low When Input Pins Are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C
    to 140°C
  • 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×
    3-mm WSON With Exposed Thermal Pad) Package
    Options
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical
    Drive
  • Strong Sink Current Offers Enhanced Immunity
    Against Miller Turnon
  • Split Output Configuration (Allows Easy and
    Independent Adjustment of Turnon and Turnoff
    Speeds) in the UCC27511 Saves 1 Diode
  • Fast Propagation Delays (13-ns Typical)
  • Fast Rise and Fall Times (9-ns and 7-ns Typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power
    Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual-Input Design (Choice of an Inverting
    (IN– Pin) or Noninverting (IN+ Pin)
    Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low When Input Pins Are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C
    to 140°C
  • 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×
    3-mm WSON With Exposed Thermal Pad) Package
    Options

The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or IN– pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.

The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511 device also features a unique split output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

UCC27511 and UCC27512 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or IN– pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.

The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511 device also features a unique split output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

UCC27511 and UCC27512 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink) datasheet (Rev. F) PDF | HTML 09.12.2013
Anwendungshinweis Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22.01.2024
Anwendungshinweis Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 08.09.2023
Anwendungshinweis Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10.11.2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18.01.2019
Weitere Dokumente Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29.10.2018
Application brief Enable Function with Unused Differential Input 11.07.2018
Auswahlhilfe Power Management Guide 2018 (Rev. R) 25.06.2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16.03.2018
Whitepaper Advancing Power Supply Solutions Through the Promise of GaN 24.02.2015
Weitere Dokumente Design Review of a Full-Featured 350-W Offline Power Converter 29.10.2013

Design und Entwicklung

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Evaluierungsplatine

UCC57142EVM — UCC57142 – Evaluierungsmodul

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UCC27511 PSpice Transient Model (Rev. B)

SLUM283B.ZIP (48 KB) - PSpice-Modell
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UCC27511 Unencrypted PSpice Transient Model

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SLURB27 — UCC27511 and UCC27512 Schematic Review Template

Design reference and reference for the UCC27511 and the UCC27512 to assist in system design.
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