UCC20225-Q1

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Automotive Basic, 4A/6A dual-channel isolated gate driver w/ single PWM input

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Datenblatt

document-pdfAcrobat UCC20225-Q1, UCC20225A-Q1 Isolated Dual-Channel Gate Driver with Single Input in LGA for Automotive 48-V Systems datasheet (Rev. C) (Englisch) PDF | HTML

UCC20225-Q1

AKTIV

Datenblatt

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Produktdetails

Number of channels

2

Isolation rating

Functional

Power switch

IGBT, MOSFET, SiCFET

Withstand isolation voltage (VISO) (Vrms)

2500

Working isolation voltage (VIOWM) (Vrms)

792

Transient isolation voltage (VIOTM) (VPK)

3535

Peak output current (A)

6

Features

Disable, Programmable dead time

Output VCC/VDD (min) (V)

9.2

Output VCC/VDD (max) (V)

25

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

18

Propagation delay time (µs)

0.019

Input threshold

CMOS, TTL

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

792

Rise time (ns)

6

Fall time (ns)

7

Undervoltage lockout (typ) (V)

8

Number of channels

2

Isolation rating

Functional

Power switch

IGBT, MOSFET, SiCFET

Withstand isolation voltage (VISO) (Vrms)

2500

Working isolation voltage (VIOWM) (Vrms)

792

Transient isolation voltage (VIOTM) (VPK)

3535

Peak output current (A)

6

Features

Disable, Programmable dead time

Output VCC/VDD (min) (V)

9.2

Output VCC/VDD (max) (V)

25

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

18

Propagation delay time (µs)

0.019

Input threshold

CMOS, TTL

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

792

Rise time (ns)

6

Fall time (ns)

7

Undervoltage lockout (typ) (V)

8

VLGA (NPL)

13

25 mm² (5 mm × 5 mm)

AEC Q100 qualified with:
- Device temperature grade 1
- Device HBM ESD classification level H2
- Device CDM ESD classification level C6
Single PWM input, dual output
Resistor-programmable dead time
4-A peak source, 6-A peak sink output
CMTI greater than 100-V/ns
Switching parameters:
- 19-ns typical propagation delay
- 5-ns maximum delay matching
- 6-ns maximum pulse-width distortion
3-V to 18-V input VCCI range
Up to 25-V VDD with 5V and 8-V UVLO Options
Rejects input transients shorter than 5-ns
TTL and CMOS compatible inputs
5-mm x 5-mm space-saving LGA-13 Package
Safety-related certifications:
- 3535-V_PK isolation per VDE V 0884-11:2017
- 2500-V_RMS isolation for 1 minute per UL 1577
- CQC Certification per GB4943.1-2011

AEC Q100 qualified with:
- Device temperature grade 1
- Device HBM ESD classification level H2
- Device CDM ESD classification level C6
Single PWM input, dual output
Resistor-programmable dead time
4-A peak source, 6-A peak sink output
CMTI greater than 100-V/ns
Switching parameters:
- 19-ns typical propagation delay
- 5-ns maximum delay matching
- 6-ns maximum pulse-width distortion
3-V to 18-V input VCCI range
Up to 25-V VDD with 5V and 8-V UVLO Options
Rejects input transients shorter than 5-ns
TTL and CMOS compatible inputs
5-mm x 5-mm space-saving LGA-13 Package
Safety-related certifications:
- 3535-V_PK isolation per VDE V 0884-11:2017
- 2500-V_RMS isolation for 1 minute per UL 1577
- CQC Certification per GB4943.1-2011

The UCC20225-Q1 family are single-input, dual-output isolated gate drivers with 4-A source and 6-A sink peak current in 5-mm x 5-mm LGA-13. It is designed to drive power transistors up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 2.5-kV_RMS isolation barrier, with minimum 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two output-side drivers allows working voltage up to 700-V_DC.

The UCC20225-Q1 family allow programmable dead time through a resistor on DT pin. A DIS pin shuts down both outputs simultaneously when set high, and allows normal operation when left grounded.

The device accepts VDD supply voltages up to 25-V. A wide VCCI range from 3-V to 18-V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC20225-Q1 family enables high power density, high efficiency, and robustness in a variety of automotive applications.

The UCC20225-Q1 family are single-input, dual-output isolated gate drivers with 4-A source and 6-A sink peak current in 5-mm x 5-mm LGA-13. It is designed to drive power transistors up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 2.5-kV_RMS isolation barrier, with minimum 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two output-side drivers allows working voltage up to 700-V_DC.

The UCC20225-Q1 family allow programmable dead time through a resistor on DT pin. A DIS pin shuts down both outputs simultaneously when set high, and allows normal operation when left grounded.

The device accepts VDD supply voltages up to 25-V. A wide VCCI range from 3-V to 18-V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC20225-Q1 family enables high power density, high efficiency, and robustness in a variety of automotive applications.

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Technische Dokumentation

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Top-Dokumentation	Typ	Titel	Format-Optionen	Datum
*	Datenblatt	UCC20225-Q1, UCC20225A-Q1 Isolated Dual-Channel Gate Driver with Single Input in LGA for Automotive 48-V Systems datasheet (Rev. C)	PDF \| HTML	19.09.2019
	Zertifikat	VDE Certificate for Basic Isolation for DIN EN IEC 60747-17 (Rev. AA)		11.06.2026
	Whitepaper	Understanding failure modes in isolators (Rev. B)	PDF \| HTML	29.01.2024
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	Technischer Artikel	Evolution of 48V starter-generator systems	PDF \| HTML	23.09.2019
	Zertifikat	UL Certification E181974 Vol 4. Sec 8 (Rev. A)		23.07.2018
	Whitepaper	Driving the future of HEV/EV with high-voltage solutions (Rev. B)		16.05.2018
	Zertifikat	CQC Product Certificate 2		07.02.2018
	Whitepaper	Cities grow smarter through innovative semiconductor technologies		07.07.2017

Design und Entwicklung

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