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TRF0108-SP

AKTIV

Radiation-hardness-assured (RHA), near-DC to 12GHz, differential to single-ended (D2S) RF amplifier

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Datenblatt

TRF0108-SP

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.9 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 26.5 P1dB (typ) (dBm) 11 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -43 OIP2 (typ) (dBm) 34 2nd harmonic (dBc) -39 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.9 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 26.5 P1dB (typ) (dBm) 11 Frequency of harmonic distortion measurement (GHz) 4 3rd harmonic (dBc) -43 OIP2 (typ) (dBm) 34 2nd harmonic (dBc) -39 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 75 Radiation, TID (typ) (rad) 100000
WQFN-FCRLF (RPV) 12 4 mm² (2 mm × 2 mm)
  • Standard microcircuit drawing (SMD), 5962-25201
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QML-P
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA
  • Standard microcircuit drawing (SMD), 5962-25201
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QML-P
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA

The TRF0108-SP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SP or AFE7950-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.

The TRF0108-SP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SP or AFE7950-SP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt TRF0108-SP Radiation-Hardness-Assured (RHA), Near-DC to 12GHz, Differential to Single-Ended RF Amplifier datasheet PDF | HTML 10.07.2026
* Strahlungs- und Zuverlässigkeitsbericht TRF0108-SP Total Ionizing Dose (TID) Report (Rev. A) 30.03.2026
* Strahlungs- und Zuverlässigkeitsbericht TRF0108-SP Single-Event Effects (SEE) Radiation Report 27.03.2026
Auswahlhilfe TI Space Products (Rev. L) 27.03.2026

Design und Entwicklung

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Simulationsmodell

TRF0108-SP S-Parameter Model

SLOM538.ZIP (8 KB) - S-Parameter-Modell
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Zertifizierung

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