TPS7H2221-SEP

Name: TPS7H2221-SEP
Brand: TI
SKU: TPS7H2221-SEP
Price: 225.451 USD

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Strahlungstoleranter Lastschalter, Eingangsspannung 1,6bis 5,5 V Eingangsspannung, 1,25 A

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Datenblatt

document-pdfAcrobat TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch datasheet (Rev. A) (Englisch) PDF | HTML

TPS7H2221-SEP

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Datenblatt

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Produktdetails

Imax (A)

1.25

Vin (max) (V)

5.5

Vin (min) (V)

1.6

Number of channels

1

Features

Inrush current control, Quick output discharge, Short circuit protection, Thermal shutdown

Quiescent current (Iq) (typ) (µA)

8

Soft start

Fixed Rise Time

Rating

Space

Ron (typ) (mΩ)

115

Shutdown current (ISD) (typ) (µA)

0.003

Current limit type

Fixed

Function

Inrush current control, Short circuit protection, Thermal shutdown

FET

Internal

Operating temperature range (°C)

-55 to 125

Device type

Load switch

Imax (A)

1.25

Vin (max) (V)

5.5

Vin (min) (V)

1.6

Number of channels

1

Features

Inrush current control, Quick output discharge, Short circuit protection, Thermal shutdown

Quiescent current (Iq) (typ) (µA)

8

Soft start

Fixed Rise Time

Rating

Space

Ron (typ) (mΩ)

115

Shutdown current (ISD) (typ) (µA)

0.003

Current limit type

Fixed

Function

Inrush current control, Short circuit protection, Thermal shutdown

FET

Internal

Operating temperature range (°C)

-55 to 125

Device type

Load switch

SOT-SC70 (DCK)

6

4.2 mm² 2 x 2.1

Vendor item drawing available, VID V62/22609
Total ionizing dose (TID) characterized to 30 krad(Si)
- TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
Single-event effects (SEE) characterized
- Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to effective linear energy transfer (LET_EFF) of 43 MeV– cm²/mg.
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized to LET_EFF of 43 MeV– cm²/mg.
Input operating voltage range (V_IN): 1.6 to 5.5 V
Recommended continuous current (I_MAX): 1.25 A
On-resistance (R_ON):
- 116 mΩ (typ.) at V_IN = 5 V
- 115 mΩ (typ.) at V_IN = 3.3 V
- 133 mΩ (typ.) at V_IN = 1.8 V
Output short protection (I_SC): 3 A (typ.)
Low power consumption:
- ON state (I_Q): 8.3 µA (typ.)
- OFF state (I_SD): 3 nA (typ.)
Slow turn ON timing to limit inrush current (t_ON):
- t_ON at 5 V = 1.68 ms at 3.61 mV/µs
- t_ON at 3.3 V = 1.51 ms at 2.91 mV/µs
- t_ON at 1.8 V = 1.32 ms at 2.15 mV/µs
Adjustable output discharge and fall time:
- Internal QOD resistance = 9.2 Ω (typ.) at V_IN = 3.3 V
Space Enhanced Plastic (SEP)
- Controlled baseline
- Gold bondwire
- NiPdAu lead finish
- One assembly and test site
- One fabrication site
- Military (–55°C to 125°C) temperature range
- Extended product life cycle
- Extended product-change notification (PCN)
- Product traceability
- Enhance mold compound for low outgassing

Vendor item drawing available, VID V62/22609
Total ionizing dose (TID) characterized to 30 krad(Si)
- TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
Single-event effects (SEE) characterized
- Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to effective linear energy transfer (LET_EFF) of 43 MeV– cm²/mg.
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized to LET_EFF of 43 MeV– cm²/mg.
Input operating voltage range (V_IN): 1.6 to 5.5 V
Recommended continuous current (I_MAX): 1.25 A
On-resistance (R_ON):
- 116 mΩ (typ.) at V_IN = 5 V
- 115 mΩ (typ.) at V_IN = 3.3 V
- 133 mΩ (typ.) at V_IN = 1.8 V
Output short protection (I_SC): 3 A (typ.)
Low power consumption:
- ON state (I_Q): 8.3 µA (typ.)
- OFF state (I_SD): 3 nA (typ.)
Slow turn ON timing to limit inrush current (t_ON):
- t_ON at 5 V = 1.68 ms at 3.61 mV/µs
- t_ON at 3.3 V = 1.51 ms at 2.91 mV/µs
- t_ON at 1.8 V = 1.32 ms at 2.15 mV/µs
Adjustable output discharge and fall time:
- Internal QOD resistance = 9.2 Ω (typ.) at V_IN = 3.3 V
Space Enhanced Plastic (SEP)
- Controlled baseline
- Gold bondwire
- NiPdAu lead finish
- One assembly and test site
- One fabrication site
- Military (–55°C to 125°C) temperature range
- Extended product life cycle
- Extended product-change notification (PCN)
- Product traceability
- Enhance mold compound for low outgassing

The TPS7H2221-SEP device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can operate over an input voltage range of 1.6 V to 5.5 V and can support a maximum continuous current of 1.25 A.

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. When power is first applied, a Smart Pull Down is used to keep the ON pin from floating until system sequencing is complete. Once the pin is deliberately driven high (V_ON>V_IH), the Smart Pull Down will be disconnected to prevent unnecessary power loss.

The TPS7H2221-SEP load switch is also self-protected, meaning that it protects against short circuit events on the output of the device.

The TPS7H2221-SEP is available in a standard SC-70 package characterized for operation over an ambient temperature range of –55°C to 125°C.

The TPS7H2221-SEP device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can operate over an input voltage range of 1.6 V to 5.5 V and can support a maximum continuous current of 1.25 A.

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. When power is first applied, a Smart Pull Down is used to keep the ON pin from floating until system sequencing is complete. Once the pin is deliberately driven high (V_ON>V_IH), the Smart Pull Down will be disconnected to prevent unnecessary power loss.

The TPS7H2221-SEP load switch is also self-protected, meaning that it protects against short circuit events on the output of the device.

The TPS7H2221-SEP is available in a standard SC-70 package characterized for operation over an ambient temperature range of –55°C to 125°C.

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Top-Dokumentation	Typ	Titel	Format-Optionen	Datum
*	Data sheet	TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch datasheet (Rev. A)	PDF \| HTML	20 Sep 2022
*	VID	TPS7H2221-SEP VID V62-22609		22 Dez 2022
*	Radiation & reliability report	TPS7H2221-SEP Total Ionizing Dose (TID) Radiation Report (Rev. A)		28 Sep 2022
*	Radiation & reliability report	TPS7H2221-SEP Production Flow and Reliability Report		22 Sep 2022
*	Radiation & reliability report	TPS7H2221-SEP Neutron Displacement (NDD) Characterization Report		18 Aug 2022
*	Radiation & reliability report	TPS7H2221-SEP Single-Event Effects (SEE) Report	PDF \| HTML	12 Jul 2022
	Selection guide	TI Space Products (Rev. L)		27 Mär 2026
	White paper	Designing Space Systems With Integrated FDIR: A Guide to TI's Space-Grade Components	PDF \| HTML	12 Jul 2025
	Technical article	How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A)	PDF \| HTML	18 Dez 2023
	Application note	Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A)	PDF \| HTML	15 Sep 2022
	E-book	Radiation Handbook for Electronics (Rev. A)		21 Mai 2019

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TPS7H2221-SEP

Strahlungstoleranter Lastschalter, Eingangsspannung 1,6bis 5,5 V Eingangsspannung, 1,25 A

TPS7H2221-SEP

Produktdetails

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Design und Entwicklung

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