TLV8811

AKTIV

Präziser einfacher Nanopower-Operationsverstärker für 425 nA für kostenoptimierte Systeme

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Datenblatt

document-pdfAcrobat TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems datasheet (Rev. A) (Englisch) PDF | HTML

TLV8811

AKTIV

Jetzt bestellen

Produktdetails

Number of channels

1

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

5.5

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

1.7

Vos (offset voltage at 25°C) (max) (mV)

0.55

Offset drift (typ) (µV/°C)

1

GBW (typ) (MHz)

0.006

Features

Cost Optimized, EMI Hardened

Slew rate (typ) (V/µs)

0.0015

Rail-to-rail

In to V-, Out

Iq per channel (typ) (mA)

0.00045

Vn at 1 kHz (typ) (nV√Hz)

450

CMRR (typ) (dB)

95

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Iout (typ) (A)

0.0047

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

0

Input common mode headroom (to positive supply) (typ) (V)

-0.9

Output swing headroom (to negative supply) (typ) (V)

0.0025

Output swing headroom (to positive supply) (typ) (V)

-0.0035

Number of channels

1

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)

5.5

Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)

1.7

Vos (offset voltage at 25°C) (max) (mV)

0.55

Offset drift (typ) (µV/°C)

1

GBW (typ) (MHz)

0.006

Features

Cost Optimized, EMI Hardened

Slew rate (typ) (V/µs)

0.0015

Rail-to-rail

In to V-, Out

Iq per channel (typ) (mA)

0.00045

Vn at 1 kHz (typ) (nV√Hz)

450

CMRR (typ) (dB)

95

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Iout (typ) (A)

0.0047

Architecture

CMOS

Input common mode headroom (to negative supply) (typ) (V)

0

Input common mode headroom (to positive supply) (typ) (V)

-0.9

Output swing headroom (to negative supply) (typ) (V)

0.0025

Output swing headroom (to positive supply) (typ) (V)

-0.0035

SOT-23 (DBV)

5

8.12 mm² (2.9 mm × 2.8 mm)

For Cost-Optimized Systems
Nanopower Supply Current: 425 nA/channel
Offset Voltage: 500 µV (max)
TcVos: 1 µV/°C
Gain-Bandwidth: 6 kHz
Unity-Gain Stable
Low Input Bias Current : 100 fA
Wide Supply Range: 1.7 V to 5.5 V
Rail-to-Rail Output
No Output Reversals
EMI Protection
Temperature Range: –40°C to 125°C
Industry Standard Packages:
- Single in 5-pin SOT-23
- Dual in 8-pin VSSOP

For Cost-Optimized Systems
Nanopower Supply Current: 425 nA/channel
Offset Voltage: 500 µV (max)
TcVos: 1 µV/°C
Gain-Bandwidth: 6 kHz
Unity-Gain Stable
Low Input Bias Current : 100 fA
Wide Supply Range: 1.7 V to 5.5 V
Rail-to-Rail Output
No Output Reversals
EMI Protection
Temperature Range: –40°C to 125°C
Industry Standard Packages:
- Single in 5-pin SOT-23
- Dual in 8-pin VSSOP

The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing I_BIAS and I_OS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively.

The TLV8811 (single) and TLV8812 (dual) family of precision ultra-low-power operational amplifiers are ideal for cost-optimized, “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 6 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 500µV, the TLV881x amplifiers provide high precision while minimizing power consumption in equipment such as CO gas detectors and portable electronic devices where operational battery-life is critical. They also have a CMOS input stage enabling fempto-amp bias currents, thereby reducing I_BIAS and I_OS errors that would otherwise impact high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The TLV8811 (single) and TLV8812 (dual) channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively.

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Top-Dokumentation	Typ	Titel	Format-Optionen
*	Datenblatt	TLV8811,TLV8812 425 nA Precision Nanopower Op Amps for Cost-Optimized Systems datasheet (Rev. A)	PDF \| HTML	16.11.2016
	Anwendungshinweis	Nano-Power Transimpedance Amplifier for Current Output Sensors		07.03.2018
	Anwendungshinweis	Nano-Power Battery Monitoring in Personal Electronics		08.12.2017
	E-book	The Signal e-book: A compendium of blog posts on op amp design topics	PDF \| HTML	28.03.2017

Design und Entwicklung

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