ONET8551T

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11,3-Gbit/s-Transimpedanzverstärker mit RSSI

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Datenblatt

document-pdfAcrobat 11.3 Gbps Limiting Transimpedance Amplifier With RSSI, ONET8551T datasheet (Englisch)

ONET8551T

AKTIV

Datenblatt

Jetzt bestellen

Produktdetails

Type

Transimpedance and limiting amplifier

Data rate (max) (Mbps)

11300

Supply current (typ) (µA)

28000

Supply current (max) (µA)

40000

Deterministic jitter (typ) (ps)

6

Operating temperature range (°C)

-40 to 100

Type

Transimpedance and limiting amplifier

Data rate (max) (Mbps)

11300

Supply current (typ) (µA)

28000

Supply current (max) (µA)

40000

Deterministic jitter (typ) (ps)

6

Operating temperature range (°C)

-40 to 100

WAFERSALE (YS)

—

See data sheet

DIESALE (Y)

—

See data sheet

9-GHz Bandwidth
10-kΩ Differential Small Signal
Transimpedance
–20-dBm Sensitivity
0.9-µA_RMS Input Referred Noise
2.5-mA_p-p Input Overload Current
Received Signal Strength Indication
(RSSI)
92-mW Typical Power Dissipation
CML Data Outputs With On-Chip
50-Ω Back-Termination
On Chip Supply Filter Capacitor
Single +3.3-V Supply
Die Size: 870 µm x 1036 µm

9-GHz Bandwidth
10-kΩ Differential Small Signal
Transimpedance
–20-dBm Sensitivity
0.9-µA_RMS Input Referred Noise
2.5-mA_p-p Input Overload Current
Received Signal Strength Indication
(RSSI)
92-mW Typical Power Dissipation
CML Data Outputs With On-Chip
50-Ω Back-Termination
On Chip Supply Filter Capacitor
Single +3.3-V Supply
Die Size: 870 µm x 1036 µm

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.

The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.

The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.

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Technische Dokumentation

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Top-Dokumentation	Typ	Titel	Format-Optionen	Neueste englische Version herunterladen	Datum
*	Datenblatt	11.3 Gbps Limiting Transimpedance Amplifier With RSSI, ONET8551T datasheet			24.10.2013

Design und Entwicklung

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Referenzdesign

TIDA-00088 — Vollständiges Referenzdesign für ONET-Teile von TI in einem mit optischen 10G SFP+ LR-Modulen kompat

This Texas Instruments Reference Design was designed to demonstrate the optical performance of the ONET1151L Laser Driver, the ONET8551T high gain Transimpedance Amplifier (TIA) and the ONET1151P Limiting Amplifier. It is available in a form factor that is compatible with 10.3125Gbps SFP+ LR (...)

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ONET8551T

11,3-Gbit/s-Transimpedanzverstärker mit RSSI

ONET8551T

Produktdetails

Technische Dokumentation

Design und Entwicklung

TIDA-00088 — Vollständiges Referenzdesign für ONET-Teile von TI in einem mit optischen 10G SFP+ LR-Modulen kompat

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