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Ideale Diode und ODER-verknüpfende Controller

LM74912-Q1

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Ideal für die Automobilindustrie geeignete Diode mit integriertem Überspannungs- und Kurzschlussschu

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LM74912-Q1

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Datenblatt Jetzt bestellen

Produktdetails

Vin (max) (V) 65 Vin (min) (V) 3 FET External back-to-back FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Under voltage lock out Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Shutdown current (ISD) (mA) (A) 0.00287 Product type Ideal diode controller
Vin (max) (V) 65 Vin (min) (V) 3 FET External back-to-back FET Device type Ideal diode controller Number of channels 1 Rating Automotive Features Adjustable current limit, Analog current monitor, Overvoltage protection, Reverse current blocking, Reverse polarity protection, Short circuit protection, Under voltage lock out Iq (typ) (mA) 0.63 TI functional safety category Functional Safety-Capable IGate source (typ) (µA) 18500 IGate sink (typ) (mA) 2670 Operating temperature range (°C) -40 to 125 Shutdown current (ISD) (mA) (A) 0.00287 Product type Ideal diode controller
VQFN (RGE) 24 16 mm² (4 mm × 4 mm)
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overvoltage and undervoltage protection
  • Output short circuit protection with MOSFET latched off state
  • Ultra low power mode with 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
  • Available in 4 mm × 4 mm 24-pin VQFN package
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-channel MOSFETs in common drain configuration
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–10.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turn-off current
  • Adjustable overvoltage and undervoltage protection
  • Output short circuit protection with MOSFET latched off state
  • Ultra low power mode with 2.5-µA shutdown current (EN=Low)
  • SLEEP mode with 6-µA current (EN=High, SLEEP=Low)
  • Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diode
  • Available in 4 mm × 4 mm 24-pin VQFN package

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt LM74912-Q1 Automotive Ideal Diode Controller With Fault Output and Overvoltage, Undervoltage, and Short Circuit Protection datasheet (Rev. A) PDF | HTML 20.09.2023
Anwendungshinweis Improving Accuracy of Shunt-Less Short Circuit Protection in Wide Temperature Range Using LM74912-Q1 PDF | HTML 17.09.2025
Informationen zur funktionalen Sicherheit LM74912-Q1 Functional safety FIT rate, FMD and Pin-FMA PDF | HTML 18.02.2025
Application brief Enabling Ultra Low Quiescent Current Through LM74912- Q1 Sleep Mode While Powering Always On Loads PDF | HTML 11.12.2023
Zertifikat LM74912Q1EVM EU Declaration of Conformity (DoC) 26.06.2023

Design und Entwicklung

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Evaluierungsplatine

LM74912Q1EVM — LM74900-Q1 – Evaluierungsmodul für Idealdiodenregler

Das LM74912-Q1 Evaluierungsmodul evaluiert den Betrieb und die Leistung des Ideale-Diode-Reglers LM74912-Q1 in Verpolungsschutz-Batterieanwendungen. Dieses Evaluierungsmodul demonstriert, wie der LM74912-Q1 zwei Back-N-Kanal-Leistungs-MOSFETs steuert, um einen idealen Dioden-Gleichrichter mit (...)

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