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ISO5851

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Isolierter Einkanal-Gate-Treiber, 5,7 kVrms, 2,5/5 A mit aktiven Schutzfunktionen

Produktdetails

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 20 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 20 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm)
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 100-kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 12800-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 2121-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5851 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.

The ISO5851 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5851 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.

The ISO5851 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt ISO5851 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. C) PDF | HTML 30.05.2023
Zertifikat VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 15.07.2026
EVM User's guide UCC2181xx, UCC217xx, and ISO5x5x Evaluation Module (Rev. A) PDF | HTML 08.06.2026
Whitepaper High-voltage reinforced isolation: Definitions and test methodologies (Rev. A) PDF | HTML 12.05.2026
Zertifikat TUV Certificate for Isolation Devices (Rev. M) 07.05.2026
Zertifikat UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. S) 07.05.2026
Application brief Does My Design Need a Miller Clamp? PDF | HTML 11.12.2024
Anwendungshinweis Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 19.07.2024
Whitepaper Understanding failure modes in isolators (Rev. B) PDF | HTML 29.01.2024
Anwendungshinweis Digital Isolator Design Guide (Rev. G) PDF | HTML 13.09.2023
Whitepaper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 31.08.2023
Zertifikat ISO5451 CQC Certificate of Product Certification PDF | HTML 16.08.2023
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16.12.2021
Zertifikat CSA Certification (Rev. Q) 14.06.2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22.08.2018
Informationen zur funktionalen Sicherheit Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18.05.2018
Anwendungshinweis Isolation Glossary (Rev. A) 19.09.2017
Technischer Artikel Understanding isolator failure modes for safe isolation PDF | HTML 28.03.2016
Technischer Artikel 7 steps to choose the right isolators for AC motor-drive applications PDF | HTML 24.11.2015
Analog Design Journal Common-mode transient immunity for isolated gate drivers 30.10.2015
Analog Design Journal 4Q 2015 Analog Applications Journal 30.10.2015
Technischer Artikel What you can do with a high-CMTI isolator PDF | HTML 01.10.2015
Whitepaper Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. B) 25.09.2015
Technischer Artikel Isolators as insulators: using isolation for electrical safety PDF | HTML 25.08.2015
Whitepaper Understanding electromagnetic compliance tests in digital isolators 17.10.2014
Anwendungshinweis Shelf-Life Evaluation of Lead-Free Component Finishes 24.05.2004

Design und Entwicklung

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Evaluierungsplatine

ISO5851EVM — ISO5851-Evaluierungsmodul (EVM)

This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

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Referenzdesign

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The TIDA-00446 reference design consists of six reinforced isolated IGBT gate drivers along with dedicated gate drive power supplies. This compact reference design is intended to control IGBT’s in 3-phase inverters like AC drives, uninterruptible power supplies (UPS) and solar inverters. The (...)

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