产品详情

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 16 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 16 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
SSOP (DL) 48 164.358 mm² 15.88 x 10.35 TSSOP (DGG) 48 101.25 mm² 12.5 x 8.1 TVSOP (DGV) 48 62.08 mm² 9.7 x 6.4
  • Members of the Texas Instruments Widebus™ Family
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise
  • Flow-Through Architecture Optimizes PCB Layout
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JESD 70
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Package Options Includes Plastic Thin Very Small-Outline (DGV), Shrink Small-Outline (DL), and Thin Shrink Small-Outline (DGG) Packages and 380-mil Fine-Pitch Ceramic (WD) Flat Package Using 25-mil Center-to-Center Spacings

Widebus, EPIC-IIB are trademarks of Texas Instruments.

  • Members of the Texas Instruments Widebus™ Family
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise
  • Flow-Through Architecture Optimizes PCB Layout
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JESD 70
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Package Options Includes Plastic Thin Very Small-Outline (DGV), Shrink Small-Outline (DL), and Thin Shrink Small-Outline (DGG) Packages and 380-mil Fine-Pitch Ceramic (WD) Flat Package Using 25-mil Center-to-Center Spacings

Widebus, EPIC-IIB are trademarks of Texas Instruments.

The 'ABT16245A devices are 16-bit noninverting 3-state transceivers designed for synchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements.

These devices can be used as two 8-bit transceviers or one 16-bit transceiver. They allow data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control (DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively isolated.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impendance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT16245A is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT16245A is characterized for operation from -40°C to 85°C.

The 'ABT16245A devices are 16-bit noninverting 3-state transceivers designed for synchronous two-way communication between data buses. The control-function implementation minimizes external timing requirements.

These devices can be used as two 8-bit transceviers or one 16-bit transceiver. They allow data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control (DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively isolated.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impendance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT16245A is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT16245A is characterized for operation from -40°C to 85°C.

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类型 标题 下载最新的英语版本 日期
* 数据表 SN54ABT16245A, SN74ABT16245A 数据表 (Rev. G) 2006年 1月 6日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 《高级总线接口逻辑器件选择指南》 英语版 2010年 7月 7日
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应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 Quad Flatpack No-Lead Logic Packages (Rev. D) 2004年 2月 16日
应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
应用手册 Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
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设计和开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

仿真模型

SN74ABT16245A IBIS Model (Rev. A)

SCBM006A.ZIP (10 KB) - IBIS Model
封装 引脚 下载
SSOP (DL) 48 查看选项
TSSOP (DGG) 48 查看选项
TVSOP (DGV) 48 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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