UCC21750 适用于 SiC/IGBT 且具有高级保护功能和高 CMTI 的单通道隔离式栅极驱动器 | 德州仪器 TI.com.cn

UCC21750 (预发布)

适用于 SiC/IGBT 且具有高级保护功能和高 CMTI 的单通道隔离式栅极驱动器

 

Sample availability and more information

Preproduction samples are available (PUCC21750DW). Request now

Full data sheet, EVM user's guide, and PSpice model are available. Request now

描述

The UCC21750 is a galvanic isolated single channel gate drivers designed for up to 1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew and high CMTI.

特性

  • Single channel SiC/IGBT isolated gate driver
  • SiC MOSFETs and IGBTs up to 1700 V
  • 33-V maximum output drive voltage (VDD-COM)
  • High peak drive current and high CMTI
  • Active miller clamp
  • UVLO with power good on RDY
  • Small propagation delay and pulse/part skew
  • Operating temperature range –40°C to 125°C
  • Safety-related certifications (planned):
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01
    • 5700-VRMS Isolation for 1 Minute per UL1577

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参数

与其它产品相比 隔离栅极驱动器 邮件 下载到电子表格中
Part number 立即下单 Isolation rating (Vrms) DIN V VDE V 0884-10 transient overvoltage rating (Vpk) DIN V VDE V 0884-10 working voltage (Vpk) Number of channels (#) Power switch Enable/disable function Output VCC/VDD (Max) (V) Output VCC/VDD (Min) (V) Input VCC (Min) (V) Input VCC (Max) (V) Peak output current (A) Prop delay (ns) Operating temperature range (C) Package Group
UCC21750 立即下单 5700     8400     2121     1     IGBT SiCFET       33     13     3     5.5     10     90     -40 to 125     SOIC | 16    
ISO5451 立即下单 5700     8000     1420     1     IGBT    
   
30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5452 立即下单 5700     8000     1420     1     IGBT
SiCFET    
   
30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16    
ISO5851 立即下单 5700     8000     2121     1     IGBT    
   
30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5852S 立即下单 5700     8000     2121     1     IGBT
SiCFET    
   
30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16