Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled, Zero voltage detection

Rating

Catalog

Operating temperature range (°C)

-40 to 125

VDS (max) (V)

650

RDS(on) (mΩ)

30

ID (max) (A)

55

Features

Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled, Zero voltage detection

Rating

Catalog

Operating temperature range (°C)

-40 to 125

VQFN (RQS)

52

144 mm² 12 x 12

650-V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns FET hold-off
- 2-MHz switching frequency
- 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
- Digital temperature PWM output
Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
Zero voltage detection feature that facilitates soft-switching converters

650-V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns FET hold-off
- 2-MHz switching frequency
- 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
- Digital temperature PWM output
Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
Zero voltage detection feature that facilitates soft-switching converters

The LMG3526R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3526R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced features include digital temperature reporting, fault detection and zero voltage detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output. Faults reported include overtemperature, overcurrent, and UVLO monitoring. Zero-voltage detection (ZVD) feature can provide a pulse output from ZVD pin when zero-voltage switching is realized.

The LMG3526R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3526R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced features include digital temperature reporting, fault detection and zero voltage detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output. Faults reported include overtemperature, overcurrent, and UVLO monitoring. Zero-voltage detection (ZVD) feature can provide a pulse output from ZVD pin when zero-voltage switching is realized.

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具有集成驱动器、保护和温度报告功能的 650V 30mΩ GaN FET

Standard version without zero-voltage switching detection feature

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	类型	项目标题		下载最新的英语版本		日期
*	数据表	LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 数据表	PDF \| HTML			2023年 3月 13日
	更多文献资料	实现 GaN 产品的寿命可靠性		下载英文版本	PDF \| HTML	2021年 10月 11日
	更多文献资料	汽车 650V GaN 功率级顶部冷却 QFN 12x12 封装的热设计和性能		下载英文版本		2021年 10月 11日

设计和开发

如需其他信息或资源，请查看下方列表，点击标题即可进入详情页面。

评估板

LMG342X-BB-EVM — 适用于 LMG342x 系列的 LMG342x GaN 系统级评估主板

LMG342X-BB-EVM 是易于使用的输出板，可将 LMG3422EVM-043 等各种 LMG342xR0x0 半桥板配置为同步降压转换器。通过提供功率级、偏置电源和逻辑电路，该 EVM 可用于快速测量 GaN 器件的开关速度。该 EVM 能够在提供充分热管理（强制通风、低频运行等）的同时提供高达 12A 的输出电流，从而确保不超出最大工作温度。该 EVM 不适合用于瞬态测量，因为该板是开环板。

仅需要一个脉宽调制输入，即可在电路板上生成互补的脉宽调制信号和相应的死区时间。提供了探测点，从而可使用具有短接地弹簧的示波器探针测量关键逻辑和功率级波形。

用户指南: PDF | HTML

下载英文版本 (Rev.B): PDF | HTML

TI.com 上无现货

子卡

LMG3522EVM-042 — LMG3522R030-Q1 具有集成驱动器子卡的汽车类 650V 30mΩ GaN FET

LMG3522EVM-042 在半桥中配置两个 LMG3522R030 GaN FET，具有逐周期过流保护、短路锁存保护功能和所有必要的辅助外围电路。该 EVM 旨在与大型系统配合使用。

用户指南: PDF

TI.com 上无现货

计算工具

GaN CCM Boost PFC Power Loss Calculation Excel Sheet (Rev. B)

SNOR029B.ZIP (205 KB)

下载

计算工具

GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet (Rev. A)

SNOR030A.ZIP (229 KB)

下载

模拟工具

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PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库，您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案，然后再进行布局和制造，可缩短产品上市时间并降低开发成本。

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参考设计

PMP40988 — 变频、ZVS、5kW、基于 GaN 的两相图腾柱 PFC 参考设计

该参考设计为高密度高效 5kW 图腾柱功率因数校正 (PFC) 设计。设计采用两相图腾柱 PFC，能在可变频率和零电压开关 (ZVS) 条件下运行。控制器采用新拓扑和改进型三角电流模式 (iTCM)，能够减小尺寸并提高效率。设计方案为在 TMS320F280049C 微控制器内使用高性能处理内核，可在广泛的工作范围内保证效率。PFC 的运行频率范围为 100kHz 至 800kHz。峰值系统效率为 99%，该数值在 120W/in3 开放式框架功率密度下实现。

测试报告: PDF

封装	引脚数	下载
VQFN (RQS)	52	了解详情

LMG3526R030

具有集成驱动器、保护和零电压检测功能的 650V 30mΩ GaN FET

LMG3526R030

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