LMG3425R030
- Qualified for JEDEC JEP180 for hard-switching topologies
- 600V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200V/ns FET hold-off
- 2.2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5V to 18V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
- Withstands 720V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Ideal diode mode reduces third-quadrant losses
The LMG3425R030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3425R030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting, fault detection, and ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. Ideal diode mode reduces third-quadrant losses by enabling dead-time control.
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LMG342X-BB-EVM — 适用于 LMG342x 系列的 LMG342x GaN 系统级评估主板
仅需要一个脉宽调制输入,即可在电路板上生成互补的脉宽调制信号和相应的死区时间。提供了探测点,从而可使用具有短接地弹簧的示波器探针测量关键逻辑和功率级波形。
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
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