产品详细信息

Rating Catalog Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM Gate drive (A) 0.75 Vs (Min) (V) 5 Vs ABS (Max) (V) 100 Features Bootstrap Diode Operating temperature range (C) -40 to 125
Rating Catalog Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM Gate drive (A) 0.75 Vs (Min) (V) 5 Vs ABS (Max) (V) 100 Features Bootstrap Diode Operating temperature range (C) -40 to 125
TSSOP (PW) 20 29 mm² 6.5 x 4.4
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes (DRV8300UD devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 15S battery powered applications
  • Higher BSTUV (8V typ) and GVDDUV (7.6V typ) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 125-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200 nS for TSSOP package variants
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)
  • 100-V Three Phase Half-Bridge Gate driver
    • Drives N-Channel MOSFETs (NMOS)
    • Gate Driver Supply (GVDD): 5-20 V
    • MOSFET supply (SHx) support upto 100 V
  • Integrated Bootstrap Diodes (DRV8300UD devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports up to 15S battery powered applications
  • Higher BSTUV (8V typ) and GVDDUV (7.6V typ) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 125-V
  • Supports negative transients upto -22-V on SHx
  • Built-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200 nS for TSSOP package variants
  • Supports 3.3-V and 5-V logic inputs with 20 V Abs max
  • 4 nS typical propogation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

DRV8300U is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300U is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

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DRV8300 正在供货 具有自举二极管的最大 100V 简单三相栅极驱动器

Drop-in replacement but without enhanced undervoltage lockout protection

技术文档

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类型 项目标题 下载最新的英语版本 日期
* 数据表 DRV8300U: 100-V Three-Phase BLDC Gate Driver 数据表 PDF | HTML 30 Jun 2022
技术文章 Understanding brushless-DC motor systems, part 2 20 Oct 2021
技术文章 Understanding brushless-DC motor systems, part 1 18 Oct 2021
技术文章 A basic brushless gate driver design – part 3: integrated vs. discrete half bridges 16 Dec 2020
技术文章 Connectivity helps integrate intelligent motor control on a single MCU 06 Jun 2018
应用手册 所选封装材料的热学和电学性质 16 Oct 2008

设计和开发

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评估板

DRV8300DIPW-EVM — DRV8300DIPW three phase BLDC evaluation module

DRV8300DIPW-EVM 是一款基于 DRV8300DIPW 栅极驱动器(适用于 BLDC 电机)的 30A 三相无刷直流驱动级。DRV8300DIPW 包含三个二极管用于自举操作,因此无需使用外部二极管。

此 EVM 包含三个电流分流放大器,可用于低侧电流测量以及 PVDD/GVDD 电压和电路板温度反馈。可向此 EVM 提供高达 100V 的电压,板载降压器件可为自举 GVDD 电源提供所需的 12V 电压。包含所有电源的状态 LED 以及故障 LED,用于提供用户反馈。

此套件需要使用 C2000 Launchpad (LAUNCHXL-F280049C) 控制 (...)

评估板

DRV8300DRGE-EVM — DRV8300DRGE three phase BLDC evaluation module

The DRV8300DRGE-EVM is a 30A, 3-phase brushless DC drive stage based on the DRV8300DRGE gate driver for BLDC motors.

The DRV8300DRGE incorporates three diodes for bootstrap operation without the need for external diodes. The EVM includes three current shunt amplifiers for low-side current (...)

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TSSOP (PW) 20 了解详情

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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 认证摘要
  • 持续可靠性监测

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