This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter and increasing the power density of the power stage. The multilevel topology allows the use of 600-V rated power devices at higher DC bus voltages of up to 1000 V. The lower switching voltage stress reduces switching losses, resulting in a peak efficiency of 98.5%.

• Power stage for three-phase inverters and PFCs using GaN switch
• 600-V rated switches in 800-V system (due to three levels)
• Novel onboard protection implemented using CLB of C2000
• Iso-quad channel driver supports high-frequency operation (100 kHz)
• Shunt-based current sense (high accuracy and linearity over temperature)
• Power module with up to 16-A current (on AC side)
• High power density due to high switching frequency (100 kHz) and high efficiency (> 98% at full load)
• Bidirectional operation with < 1-ms direction changeover
• Low component stress helps improve system reliability
• Optimized control scheme needs only 6 PWMs versus 9 PWMs for standard implementation
• Reduced cost - four high frequency switches (versus six) per arm
• Real-time safety operation with no extra cost