The ISO5452-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum
30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span of
2 μs. When OUTL reaches 2 V with respect to the most negative supply potential, VEE2, the gate driver output is pulled hard to VEE2 potential, turning the IGBT immediately off.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
ISO5452-Q1 | SOIC (16) | 10.30 mm × 7.50 mm |
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.
The ISO5452-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | VEE2 | — | Output negative supply. Connect to GND2 for Unipolar supply application. |
2 | DESAT | I | Desaturation voltage input |
3 | GND2 | — | Gate drive common. Connect to IGBT emitter. |
4 | OUTH | O | Positive gate drive voltage output |
5 | VCC2 | — | Most positive output supply potential. |
6 | OUTL | O | Negative gate drive voltage output |
7 | CLAMP | O | Miller clamp output |
8 | VEE2 | — | Output negative supply. Connect to GND2 for Unipolar supply application. |
9 | GND1 | — | Input ground |
10 | IN+ | I | Non-inverting gate drive voltage control input |
11 | IN– | I | Inverting gate drive voltage control input |
12 | RDY | O | Power-good output, active high when both supplies are good. |
13 | FLT | O | Fault output, low-active during DESAT condition |
14 | RST | I | Reset input, apply a low pulse to reset fault latch. |
15 | VCC1 | — | Positive input supply (2.25 V to 5.5 V) |
16 | GND1 | — | Input ground |
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
VCC1 | Supply voltage input side | GND1 – 0.3 | 6 | V | ||
VCC2 | Positive supply voltage output side | (VCC2 – GND2) | –0.3 | 35 | V | |
VEE2 | Negative supply voltage output side | (VEE2 – GND2) | –17.5 | 0.3 | V | |
V(SUP2) | Total supply output voltage | (VCC2 – VEE2) | –0.3 | 35 | V | |
V(OUTH) | Positive gate driver output voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
V(OUTL) | Negative gate driver output voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
I(OUTH) | Gate driver high output current | Gate driver high output current (maximum pulse width = 10 μs, maximum duty cycle = 0.2%) |
2.7 | A | ||
I(OUTL) | Gate driver low output current | Gate driver high output current (maximum pulse width = 10 μs, maximum duty cycle = 0.2%) |
5.5 | A | ||
V(LIP) | Voltage at IN+, IN–, FLT, RDY, RST | GND1 - 0.3 | VCC1 + 0.3 | V | ||
I(LOP) | Output current of FLT, RDY | 10 | mA | |||
V(DESAT) | Voltage at DESAT | GND2 - 0.3 | VCC2 + 0.3 | V | ||
V(CLAMP) | Clamp voltage | VEE2 – 0.3 | VCC2 + 0.3 | V | ||
TJ | Junction temperature | –40 | 150 | °C | ||
TSTG | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCC1 | Supply voltage input side | 2.25 | 5.5 | V | |
VCC2 | Positive supply voltage output side (VCC2 – GND2) | 15 | 30 | V | |
VEE2 | Negative supply voltage output side (VEE2 – GND2) | –15 | 0 | V | |
V(SUP2) | Total supply voltage output side (VCC2 – VEE2) | 15 | 30 | V | |
VIH | High-level input voltage (IN+, IN–, RST) | 0.7 × VCC1 | VCC1 | V | |
VIL | Low-level input voltage (IN+, IN–, RST) | 0 | 0.3 × VCC1 | V | |
tUI | Pulse width at IN+, IN– for full output (CLOAD = 1 nF) | 40 | ns | ||
tRST | Pulse width at RST for resetting fault latch | 800 | ns | ||
TA | Ambient temperature | –40 | 125 | °C |
THERMAL METRIC(1) | ISO5452-Q1 | UNIT | |
---|---|---|---|
DW (SOIC) | |||
16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 99.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 48.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 56.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 29.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 56.5 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PD | Maximum power dissipation(1) | 1255 | mW | |||
PID | Maximum input power dissipation | 175 | mW | |||
POD | Maximum output power dissipation | 1080 | mW |
PARAMETER | TEST CONDITIONS | VALUE | UNIT | |
---|---|---|---|---|
GENERAL | ||||
CLR | External clearance(1) | Shortest terminal-to-terminal distance through air | >8 | mm |
CPG | External creepage(1) | Shortest terminal-to-terminal distance across the package surface | >8 | mm |
DTI | Distance through the insulation | Minimum internal gap (internal clearance) | >21 | μm |
CTI | Tracking resistance (comparative tracking index) | DIN EN 60112 (VDE 0303-11); IEC 60112; | >600 | V |
Material Group | According to IEC 60664-1; UL 746A | I | ||
Overvoltage category (according to IEC 60664-1) | Rated Mains Voltage ≤ 300 VRMS | I-IV | ||
Rated Mains Voltage ≤ 600 VRMS | I-III | |||
Rated Mains Voltage ≤ 1000 VRMS | I-II | |||
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12(2) | ||||
VIORM | Maximum repetitive peak isolation voltage | AC voltage (bipolar) | 1420 | VPK |
VIOWM | Maximum isolation working voltage | AC voltage. Time dependent dielectric breakdown (TDDB) Test, see Figure 1 | 1000 | VRMS |
DC voltage | 1420 | VDC | ||
VIOTM | Maximum transient isolation voltage | VTEST = VIOTM, t = 60 s (qualification), t = 1 s (100% production) | 8000 | VPK |
VIOSM | Maximum surge isolation voltage(3) | Test method per IEC 60065, 1.2/50 μs waveform, VTEST = 1.6 × VIOSM = 10000 VPK (qualification)(3) | 6250 | VPK |
qpd | Apparent charge(4) | Method a: After I/O safety test subgroup 2/3, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 × VIORM = 1704 VPK, tm = 10 s | ≤5 | pC |
Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.6 × VIORM = 2272 VPK, tm = 10 s | ≤5 | |||
Method b1: At routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 60 s; Vpd(m) = 1.875× VIORM = 2663 VPK, tm = 10 s | ≤5 | |||
RIO | Isolation resistance, input to output(5) | VIO = 500 V, TA = 25°C | > 1012 | Ω |
VIO = 500 V, 100°C ≤ TA ≤ 125°C | > 1011 | Ω | ||
VIO = 500 V at TS = 150°C | > 109 | Ω | ||
CIO | Barrier capacitance, input to output(5) | VIO = 0.4 x sin (2πft), f = 1 MHz | 1 | pF |
Pollution degree | 2 | |||
UL 1577 | ||||
VISO | Withstanding Isolation voltage | VTEST = VISO, t = 60 s (qualification), VTEST = 1.2 × VISO = 6840 VRMS, t = 1 s (100% production) |
5700 | VRMS |
VDE | CSA | UL | CQC | TUV |
---|---|---|---|---|
Certified according to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 and DIN EN 60950-1 (VDE 0805 Teil 1):2011-01 |
Certified according to CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 | Certified according to UL 1577 Component Recognition Program | Certified according to GB 4943.1-2011 | Certified according to EN 61010-1:2010 (3rd Ed) and EN 60950-1:2006/A11:2009/A1:2010/ A12:2011/A2:2013 |
Reinforced Insulation Maximum Transient isolation voltage, 8000 VPK; Maximum surge isolation voltage, 6250 VPK, Maximum repetitive peak isolation voltage, 1420 VPK |
Isolation Rating of 5700 VRMS; Reinforced insulation per CSA 60950- 1- 07+A1+A2 and IEC 60950-1 (2nd Ed.), 800 VRMS max working voltage (pollution degree 2, material group I) ; 2 MOPP (Means of Patient Protection) per CSA 60601-1:14 and IEC 60601-1 Ed. 3.1, 250 VRMS (354 VPK) max working voltage |
Single Protection, 5700 VRMS (1) | Reinforced Insulation, Altitude ≤ 5000m, Tropical climate, 400 VRMS maximum working voltage | 5700 VRMS Reinforced insulation per EN 61010-1:2010 (3rd Ed) up to working voltage of 600 VRMS 5700 VRMS Reinforced insulation per EN 60950-1:2006/A11:2009/A1:2010/ A12:2011/A2:2013 up to working voltage of 800 VRMS |
Certification completed Certificate number: 40040142 |
Master contract number: 220991 | Certification completed File number: E181974 |
Certification completed Certificate number: CQC16001141761 |
Certification completed Client ID number: 77311 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IS | Safety input, output or supply current | RθJA = 99.6°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C, see Figure 2 | 456 | mA | ||
RθJA = 99.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C, see Figure 2 | 346 | |||||
RθJA = 99.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C, see Figure 2 | 228 | |||||
RθJA = 99.6°C/W, VI = 15 V, TJ = 150°C, TA = 25°C, see Figure 2 | 484 | |||||
RθJA = 99.6°C/W, VI = 30 V, TJ = 150°C, TA = 25°C, see Figure 2 | 42 | |||||
PS | Safety input, output, or total power | RθJA = 99.6°C/W, TJ = 150°C, TA = 25°C, see Figure 3 | 1255(1) | mW | ||
TS | Safety temperature | 150 | °C |
The safety-limiting constraint is the maximum junction temperature specified in the data sheet. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VOLTAGE SUPPLY | |||||||
VIT+(UVLO1) | Positive-going UVLO1 threshold voltage input side (VCC1 – GND1) | 2.25 | V | ||||
VIT-(UVLO1) | Negative-going UVLO1 threshold voltage input side (VCC1 – GND1) | 1.7 | V | ||||
VHYS(UVLO1) | UVLO1 Hysteresis voltage (VIT+ – VIT–) input side | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.2 | V | |||
VIT+(UVLO2) | Positive-going UVLO2 threshold voltage output side (VCC2 – GND2) | 13 | V | ||||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 12 | ||||||
VIT-(UVLO2) | Negative-going UVLO2 threshold voltage output side (VCC2 – GND2) | 9.5 | V | ||||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 11 | ||||||
VHYS(UVLO2) | UVLO2 Hysteresis voltage (VIT+ – VIT–) output side | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 1 | V | |||
IQ1 | Input supply quiescent current | 4.5 | mA | ||||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.8 | ||||||
IQ2 | Output supply quiescent current | 6 | mA | ||||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 3.6 | ||||||
LOGIC I/O | |||||||
VIT+(IN,RST) | Positive-going input threshold voltage (IN+, IN–, RST) | 0.7 × VCC1 | V | ||||
VIT-(IN,RST) | Negative-going input threshold voltage (IN+, IN–, RST) | 0.3 × VCC1 | V | ||||
VHYS(IN,RST) | Input hysteresis voltage (IN+, IN–, RST) | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.15 × VCC1 | V | |||
IIH | High-level input leakage at (IN+)(1) | IN+ = VCC1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
100 | µA | |||
IIL | Low-level input leakage at (IN–, RST)(2) | IN– = GND1, RST = GND1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | –100 | µA | |||
IPU | Pullup current of FLT, RDY | V(RDY) = GND1, V(FLT) = GND1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
100 | µA | |||
VOL | Low-level output voltage at FLT, RDY | I(FLT) = 5 mA | 0.2 | V | |||
GATE DRIVER STAGE | |||||||
V(OUTPD) | Active output pulldown voltage | I(OUTH/L) = 200 mA, VCC2 = open | 2 | V | |||
V(OUTH) | High-level output voltage | I(OUTH) = –20 mA | VCC2 – 0.5 | V | |||
I(OUTH) = –20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | VCC2 – 0.24 | ||||||
V(OUTL) | Low-level output voltage | I(OUTL) = 20 mA | VEE2 + 50 | mV | |||
I(OUTL) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | VEE2 + 13 | ||||||
I(OUTH) | High-level output peak current | IN+ = high, IN– = low, V(OUTH) = VCC2 – 15 V | 1.5 | A | |||
IN+ = high, IN– = low, V(OUTH) = VCC2 – 15 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
2.5 | ||||||
I(OUTL) | Low-level output peak current | IN+ = low, IN– = high, V(OUTL) = VEE2 + 15 V | 3.4 | A | |||
IN+ = low, IN– = high, V(OUTL) = VEE2 + 15 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
5 | ||||||
I(OLF) | Low level output current during fault condition | TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 130 | mA | |||
ACTIVE MILLER CLAMP | |||||||
V(CLP) | Low-level clamp voltage | I(CLP) = 20 mA | VEE2 + 0.08 | V | |||
I(CLP) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
VEE2 + 0.015 | ||||||
I(CLP) | Low-level clamp current | V(CLAMP) = VEE2 + 2.5 V | 1.6 | 3.3 | A | ||
V(CLAMP) = VEE2 + 2.5 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.5 | ||||||
V(CLTH) | Clamp threshold voltage | 1.6 | 2.5 | V | |||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2.1 | ||||||
SHORT CIRCUIT CLAMPING | |||||||
V(CLP_OUTH) | Clamping voltage (VOUTH – VCC2) |
IN+ = high, IN– = low, tCLP = 10 µs, I(OUTH) = 500 mA |
1.1 | 1.3 | V | ||
IN+ = high, IN– = low, tCLP = 10 µs, I(OUTH) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | |||||||
V(CLP_OUTL) | Clamping voltage (VOUTL – VCC2) |
IN+ = high, IN– = low, tCLP = 10 µs, I(OUTL) = 500 mA |
1.3 | 1.5 | V | ||
IN+ = high, IN– = low, tCLP = 10 µs, I(OUTL) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | |||||||
V(CLP_CLAMP) | Clamping voltage (VCLP – VCC2) |
IN+ = high, IN– = low, tCLP = 10 µs, I(CLP) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 1.3 | V | |||
Clamping voltage at CLAMP | IN+ = High, IN– = Low, I(CLP) = 20 mA | 1.1 | V | ||||
IN+ = High, IN– = Low, I(CLP) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
0.7 | ||||||
V(CLP_OUTL) | Clamping voltage at OUTL (VCLP - VCC2) |
IN+ = High, IN– = Low, I(OUTL) = 20 mA | 1.1 | V | |||
IN+ = High, IN– = Low, I(OUTL) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
0.7 | ||||||
DESAT PROTECTION | |||||||
I(CHG) | Blanking capacitor charge current | V(DESAT) – GND2 = 2 V | 0.42 | 0.58 | mA | ||
V(DESAT) – GND2 = 2 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 0.5 | ||||||
I(DCHG) | Blanking capacitor discharge current | V(DESAT) – GND2 = 6 V | 9 | mA | |||
V(DESAT) – GND2 = 6 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 14 | ||||||
V(DSTH) | DESAT threshold voltage with respect to GND2 | 8.3 | 9.5 | V | |||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 9 | ||||||
V(DSL) | DESAT voltage with respect to GND2, when OUTH/L is driven low | 0.4 | 1 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tr | Output signal rise time, see Figure 44, Figure 45 and Figure 46 | CLOAD = 1 nF | 12 | 35 | ns | |
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 18 | |||||
tf | Output signal fall time, see Figure 44, Figure 45 and Figure 46 | CLOAD = 1 nF | 12 | 37 | ns | |
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 20 | |||||
tPLH, tPHL | Propagation delay, see Figure 44, Figure 45 and Figure 46 | CLOAD = 1 nF | 76 | 110 | ns | |
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | ||||||
tsk-p | Pulse skew |tPHL – tPLH|, see Figure 44, Figure 45 and Figure 46 | CLOAD = 1 nF | 20 | ns | ||
tsk-pp | Part-to-part skew, see Figure 44, Figure 45 and Figure 46 | CLOAD = 1 nF | 30(1) | ns | ||
tGF | Glitch filter on IN+, IN–, RST, see Figure 44, Figure 45 and Figure 46 | CLOAD = 1 nF | 20 | 40 | ns | |
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 30 | |||||
tDS (90%) | DESAT sense to 90% VOUTH/L delay, see Figure 44, Figure 45 and Figure 46 | CLOAD = 10 nF | 760 | ns | ||
CLOAD = 10 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 553 | |||||
tDS (10%) | DESAT sense to 10% VOUTH/L delay, see Figure 44, Figure 45 and Figure 46 | CLOAD = 10 nF | 3.5 | μs | ||
CLOAD = 10 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2 | |||||
tDS (GF) | DESAT glitch filter delay | CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 330 | ns | ||
tDS (FLT) | DESAT sense to FLT-low delay, see Figure 46 | 1.4 | μs | |||
tLEB | Leading edge blanking time, see Figure 44 and Figure 45 | 310 | 480 | ns | ||
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V |
400 | |||||
tGF(RSTFLT) | Glitch filter on RST for resetting FLT | 300 | 800 | ns | ||
CI | Input capacitance(2) | VI = VCC1 / 2 + 0.4 × sin (2πft), f = 1 MHz, VCC1 = 5 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 2 | pF | ||
CMTI | Common-mode transient immunity, see Figure 47 | VCM = 1500 V | 50 | kV/μs | ||
VCM = 1500 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V | 100 |
TA up to 150°C | Stress-voltage frequency = 60 Hz |
Unipolar: VCC2 – VEE2 = VCC2 – GND2 |
CL = 1 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 20 V |
CL = 100 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 20 V |
CL = 10 nF | RGH = 10 Ω | RGL = 5Ω |
VCC2 – VEE2 = VCC2 – GND2 = 20 V |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 15 V | DESAT = 220pF |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 30 V | DESAT = 220pF |
IN+ = High | IN– = Low |
No CL |
CL = 1 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC1 = 5 V |
RGH = 10 Ω | RGL = 5 Ω | VCC1 = 5 V |
RGH = 0 Ω | RGL = 0 Ω | VCC1 = 5 V |
RGH = 10 Ω | RGL = 5 Ω | VCC1 = 5 V |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 = 15 V | DESAT = 6 V |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 20 V |
CL = 1 nF | RGH = 10 Ω | RGL = 5Ω |
VCC2 – VEE2 = VCC2 – GND2 = 20 V |
CL = 100 nF | RGH = 10 Ω | RGL = 5Ω |
VCC2 – VEE2 = VCC2 – GND2 = 20 V |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 15 V | DESAT = 220pF |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 – VEE2 = VCC2 – GND2 = 30 V | DESAT = 220pF |
IN+ = Low | IN– = Low |
Input frequency = 1 kHz |
RGH = 10 Ω | RGL = 5 Ω, 20 kHz |
CL = 1 nF | RGH = 0 Ω | RGL = 0 Ω |
VCC2 = 15 V |
RGH = 0 Ω | RGL = 0 Ω | VCC1 = 5 V |
RGH = 10 Ω | RGL = 5 Ω | VCC1 = 5 V |
CL = 10 nF | RGH = 0 Ω | RGL = 0 Ω |
The ISO5452-Q1 device is an isolated gate driver for IGBTs and MOSFETs. Input CMOS logic and output power stage are separated by a Silicon dioxide (SiO2) capacitive isolation.
The IO circuitry on the input side interfaces with a microcontroller and consists of gate-drive control and RESET (RST) inputs, READY (RDY) and FAULT (FLT) alarm outputs. The power stage consists of power transistors to supply 2.5-A pullup and 5-A pulldown currents to drive the capacitive load of the external power transistors, as well as DESAT detection circuitry to monitor IGBT collector-emitter overvoltage under short-circuit events. The capacitive isolation core consists of transmit circuitry to couple signals across the capacitive isolation barrier, and receive circuitry to convert the resulting low-swing signals into CMOS levels. The ISO5452-Q1 device also has undervoltage lockout circuitry to prevent insufficient gate drive to the external IGBT, and active output pulldown feature which ensures that the gate-driver output is held low, if the output supply voltage is absent. The ISO5452-Q1 device also has an active Miller clamp function which can be used to prevent parasitic turnon of the external power transistor, because of Miller effect, for unipolar supply operation.
The ISO5452-Q1 device supports both bipolar and unipolar power supply with active Miller clamp.
For operation with bipolar supplies, the IGBT is turned off with a negative voltage on the gate with respect to the emitter. This prevents the IGBT from unintentionally turning on because of current induced from the collector to the gate because Miller effect. In this condition connecting the CLAMP output of the gate driver to the IGBT gate is not necessary, but connecting the CLAMP output of the gate driver to the IGBT gate is also not an issue. Typical values of VCC2 and VEE2 for bipolar operation are 15 V and –8 V with respect to GND2.
For operation with unipolar supply, typically, VCC2 is connected to 15 V with respect to GND2, and VEE2 is connected to GND2. In this use case, the IGBT can turn on because of additional charge from IGBT Miller capacitance caused by a high-voltage slew-rate transition on the IGBT collector. To prevent IGBT from turning on, the CLAMP pin is connected to IGBT gate and Miller current is sinked through a low-impedance CLAMP transistor.
Miller CLAMP is designed for miller current up to 2 A. When the IGBT is turned off and the gate voltage transitions below 2 V and the CLAMP current output is activated.
The active output pulldown feature ensures that the IGBT gate OUTH/L is clamped to VEE2 to ensure safe IGBT off-state, when the output side is not connected to the power supply.
Undervoltage lockout (UVLO) ensures correct switching of IGBT. The IGBT is turned off, if the supply VCC1 drops below VIT-(UVLO1), irrespective of IN+, IN– and RST input until VCC1 goes above VIT+(UVLO1).
In similar manner, the IGBT is turned off if the supply VCC2 drops below VIT-(UVLO2), irrespective of IN+, IN– and RST input till VCC2 goes above VIT+(UVLO2).
The RDY pin indicates status of input and output side UVLO internal protection feature. If either side of device have insufficient supply (VCC1 or VCC2), the RDY pin output goes low; otherwise, RDY pin output is high. The RDY pin also serves as an indication to the micro-controller that the device is ready for operation.
During IGBT overcurrent condition, a mute logic initiates a soft-turn-off procedure which disables OUTH and pulls OUTL to low over a time span of 2 μs. When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the RST input. RST has an internal filter to reject noise and glitches. By asserting RST for at least the specified minimum duration (800ns), device input logic can be enabled or disabled.
Under short-circuit events currents can be induced back into the gate-driver OUTH/L and CLAMP pins because of parasitic Miller capacitance between the IGBT collector and gate terminals. Internal protection diodes on OUTH/L and CLAMP help to sink these currents while clamping the voltages on these pins to values slightly higher than the output side supply.
For OUTH/L of the ISO5452-Q1 device to follow IN+ in normal functional mode, the RST and RDY pins must be in the high state. Table 1 lists the device functional modes
VCC1 | VCC2 | IN+ | IN– | RST | RDY | OUTH/L |
---|---|---|---|---|---|---|
PU | PD | X | X | X | Low | Low |
PD | PU | X | X | X | Low | Low |
PU | PU | X | X | Low | High | Low |
PU | Open | X | X | X | Low | Low |
PU | PU | Low | X | X | High | Low |
PU | PU | X | High | X | High | Low |
PU | PU | High | Low | High | High | High |