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  • ISO5452-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

    • SLLSEQ5A September   2016  – December 2016

      PRODUCTION DATA.  

  • CONTENTS
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  • ISO5452-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Function
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Supply and Active Miller Clamp
      2. 9.3.2 Active Output Pull-down
      3. 9.3.3 Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication Output
      4. 9.3.4 Soft Turn-Off, Fault (FLT) and Reset (RST)
      5. 9.3.5 Short Circuit Clamp
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Recommended ISO5452-Q1 Application Circuit
        2. 10.2.2.2  FLT and RDY Pin Circuitry
        3. 10.2.2.3  Driving the Control Inputs
        4. 10.2.2.4  Local Shutdown and Reset
        5. 10.2.2.5  Global-Shutdown and Reset
        6. 10.2.2.6  Auto-Reset
        7. 10.2.2.7  DESAT Pin Protection
        8. 10.2.2.8  DESAT Diode and DESAT Threshold
        9. 10.2.2.9  Determining the Maximum Available, Dynamic Output Power, POD-max
        10. 10.2.2.10 Example
        11. 10.2.2.11 Higher Output Current Using an External Current Buffer
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 PCB Material
    3. 12.3 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information
  15. IMPORTANT NOTICE
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DATA SHEET

ISO5452-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM Classification Level 3A
    • Device CDM Classification Level C6
  • 50-kV/μs Minimum and 100-kV/μs Typical Common-Mode Transient Immunity (CMTI)
    at VCM = 1500 V
  • Split Outputs to provide 2.5-A Peak Source and
    5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ),
    110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Soft Turn-Off (STO) during Short Circuit
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication
  • Active Output Pulldown and Default Low Outputs With Low Supply or Floating Inputs
  • 2.25-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Isolation Surge Withstand Voltage 10000-VPK
  • Safety-Related Certifications:
    • 8000-VPK VIOTM and 1420-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-VRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
    • All Certifications Complete

2 Applications

  • Isolated IGBT and MOSFET Drives in:
    • HEV and EV Power Modules
    • Industrial Motor Control Drives
    • Industrial Power Supplies
    • Solar Inverters
    • Induction Heating

3 Description

The ISO5452-Q1 is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum
30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a Mute logic immediately blocks the output of the isolator and initiates a soft-turn-off procedure which disables OUTH, and pulls OUTL to low over a time span of
2 μs. When OUTL reaches 2 V with respect to the most negative supply potential, VEE2, the gate driver output is pulled hard to VEE2 potential, turning the IGBT immediately off.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
ISO5452-Q1 SOIC (16) 10.30 mm × 7.50 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Functional Block Diagram

ISO5452-Q1 FBD_SLLSEQ0.gif

4 Revision History

Changes from * Revision (September 2015) to A Revision

  • Changed the Title From: "Active Safety Features" To: Active Protection Features" Go
  • Changed the status of all certifications to complete Go
  • Changed the Electrostatic Discharge CautionGo

5 Description (continued)

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5452-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

6 Pin Configuration and Function

DW Package
16-Pin SOIC
Top View

Pin Functions

PIN I/O DESCRIPTION
NO. NAME
1 VEE2 — Output negative supply. Connect to GND2 for Unipolar supply application.
2 DESAT I Desaturation voltage input
3 GND2 — Gate drive common. Connect to IGBT emitter.
4 OUTH O Positive gate drive voltage output
5 VCC2 — Most positive output supply potential.
6 OUTL O Negative gate drive voltage output
7 CLAMP O Miller clamp output
8 VEE2 — Output negative supply. Connect to GND2 for Unipolar supply application.
9 GND1 — Input ground
10 IN+ I Non-inverting gate drive voltage control input
11 IN– I Inverting gate drive voltage control input
12 RDY O Power-good output, active high when both supplies are good.
13 FLT O Fault output, low-active during DESAT condition
14 RST I Reset input, apply a low pulse to reset fault latch.
15 VCC1 — Positive input supply (2.25 V to 5.5 V)
16 GND1 — Input ground

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC1 Supply voltage input side GND1 – 0.3 6 V
VCC2 Positive supply voltage output side (VCC2 – GND2) –0.3 35 V
VEE2 Negative supply voltage output side (VEE2 – GND2) –17.5 0.3 V
V(SUP2) Total supply output voltage (VCC2 – VEE2) –0.3 35 V
V(OUTH) Positive gate driver output voltage VEE2 – 0.3 VCC2 + 0.3 V
V(OUTL) Negative gate driver output voltage VEE2 – 0.3 VCC2 + 0.3 V
I(OUTH) Gate driver high output current Gate driver high output current
(maximum pulse width = 10 μs,
maximum duty cycle = 0.2%)
2.7 A
I(OUTL) Gate driver low output current Gate driver high output current
(maximum pulse width = 10 μs,
maximum duty cycle = 0.2%)
5.5 A
V(LIP) Voltage at IN+, IN–, FLT, RDY, RST GND1 - 0.3 VCC1 + 0.3 V
I(LOP) Output current of FLT, RDY 10 mA
V(DESAT) Voltage at DESAT GND2 - 0.3 VCC2 + 0.3 V
V(CLAMP) Clamp voltage VEE2 – 0.3 VCC2 + 0.3 V
TJ Junction temperature –40 150 °C
TSTG Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±1500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC1 Supply voltage input side 2.25 5.5 V
VCC2 Positive supply voltage output side (VCC2 – GND2) 15 30 V
VEE2 Negative supply voltage output side (VEE2 – GND2) –15 0 V
V(SUP2) Total supply voltage output side (VCC2 – VEE2) 15 30 V
VIH High-level input voltage (IN+, IN–, RST) 0.7 × VCC1 VCC1 V
VIL Low-level input voltage (IN+, IN–, RST) 0 0.3 × VCC1 V
tUI Pulse width at IN+, IN– for full output (CLOAD = 1 nF) 40 ns
tRST Pulse width at RST for resetting fault latch 800 ns
TA Ambient temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) ISO5452-Q1 UNIT
DW (SOIC)
16 PINS
RθJA Junction-to-ambient thermal resistance 99.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 48.5 °C/W
RθJB Junction-to-board thermal resistance 56.5 °C/W
ψJT Junction-to-top characterization parameter 29.2 °C/W
ψJB Junction-to-board characterization parameter 56.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

7.5 Power Ratings

VCC1 = 5.5 V, VCC2 = 30 V, TA = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PD Maximum power dissipation(1) 1255 mW
PID Maximum input power dissipation 175 mW
POD Maximum output power dissipation 1080 mW
(1) Full chip power dissipation is derated 10.04 mW/°C beyond 25°C ambient temperature. At 125°C ambient temperature, a maximum of 251 mW total power dissipation is allowed. Power dissipation can be optimized depending on ambient temperature and board design, while ensuring that Junction temperature does not exceed 150°C.

7.6 Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT
GENERAL
CLR External clearance(1) Shortest terminal-to-terminal distance through air >8 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface >8 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) >21 μm
CTI Tracking resistance (comparative tracking index) DIN EN 60112 (VDE 0303-11); IEC 60112; >600 V
Material Group According to IEC 60664-1; UL 746A I
Overvoltage category (according to IEC 60664-1) Rated Mains Voltage ≤ 300 VRMS I-IV
Rated Mains Voltage ≤ 600 VRMS I-III
Rated Mains Voltage ≤ 1000 VRMS I-II
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12(2)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 1420 VPK
VIOWM Maximum isolation working voltage AC voltage. Time dependent dielectric breakdown (TDDB) Test, see Figure 1 1000 VRMS
DC voltage 1420 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 s (qualification), t = 1 s (100% production) 8000 VPK
VIOSM Maximum surge isolation voltage(3) Test method per IEC 60065, 1.2/50 μs waveform, VTEST = 1.6 × VIOSM = 10000 VPK (qualification)(3) 6250 VPK
qpd Apparent charge(4) Method a: After I/O safety test subgroup 2/3, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 × VIORM = 1704 VPK, tm = 10 s ≤5 pC
Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.6 × VIORM = 2272 VPK, tm = 10 s ≤5
Method b1: At routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 60 s; Vpd(m) = 1.875× VIORM = 2663 VPK, tm = 10 s ≤5
RIO Isolation resistance, input to output(5) VIO = 500 V, TA = 25°C > 1012 Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C > 1011 Ω
VIO = 500 V at TS = 150°C > 109 Ω
CIO Barrier capacitance, input to output(5) VIO = 0.4 x sin (2πft), f = 1 MHz 1 pF
Pollution degree 2
UL 1577
VISO Withstanding Isolation voltage VTEST = VISO, t = 60 s (qualification),
VTEST = 1.2 × VISO = 6840 VRMS,
t = 1 s (100% production)
5700 VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
(2) This coupler is suitable for basic electrical insulation only within the maximum operating ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-terminal device

7.7 Safety-Related Certifications

VDE CSA UL CQC TUV
Certified according to DIN V VDE V 0884-10
(VDE V 0884-10):2006-12 and DIN EN 60950-1
(VDE 0805 Teil 1):2011-01
Certified according to CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 Certified according to UL 1577 Component Recognition Program Certified according to GB 4943.1-2011 Certified according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
Reinforced Insulation Maximum Transient isolation voltage, 8000 VPK;
Maximum surge isolation voltage, 6250 VPK,
Maximum repetitive peak isolation voltage, 1420 VPK
Isolation Rating of 5700 VRMS;
Reinforced insulation per CSA 60950- 1- 07+A1+A2 and IEC 60950-1 (2nd Ed.), 800 VRMS max working voltage (pollution degree 2, material group I) ;

2 MOPP (Means of Patient Protection) per CSA 60601-1:14 and IEC 60601-1 Ed. 3.1, 250 VRMS (354 VPK) max working voltage
Single Protection, 5700 VRMS (1) Reinforced Insulation, Altitude ≤ 5000m, Tropical climate, 400 VRMS maximum working voltage 5700 VRMS Reinforced insulation per
EN 61010-1:2010 (3rd Ed) up to working voltage of 600 VRMS

5700 VRMS Reinforced insulation per
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to working voltage of 800 VRMS
Certification completed
Certificate number: 40040142
Master contract number: 220991 Certification completed
File number: E181974
Certification completed
Certificate number: CQC16001141761
Certification completed
Client ID number: 77311
(1) Production tested ≥ 6840 VRMS for 1 second in accordance with UL 1577.

7.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system failures.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IS Safety input, output or supply current RθJA = 99.6°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C, see Figure 2 456 mA
RθJA = 99.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C, see Figure 2 346
RθJA = 99.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C, see Figure 2 228
RθJA = 99.6°C/W, VI = 15 V, TJ = 150°C, TA = 25°C, see Figure 2 484
RθJA = 99.6°C/W, VI = 30 V, TJ = 150°C, TA = 25°C, see Figure 2 42
PS Safety input, output, or total power RθJA = 99.6°C/W, TJ = 150°C, TA = 25°C, see Figure 3 1255(1) mW
TS Safety temperature 150 °C
(1) Input, output, or the sum of input and output power should not exceed this value

The safety-limiting constraint is the maximum junction temperature specified in the data sheet. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance.

7.9 Electrical Characteristics

Over recommended operating conditions unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOLTAGE SUPPLY
VIT+(UVLO1) Positive-going UVLO1 threshold voltage input side (VCC1 – GND1) 2.25 V
VIT-(UVLO1) Negative-going UVLO1 threshold voltage input side (VCC1 – GND1) 1.7 V
VHYS(UVLO1) UVLO1 Hysteresis voltage (VIT+ – VIT–) input side TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 0.2 V
VIT+(UVLO2) Positive-going UVLO2 threshold voltage output side (VCC2 – GND2) 13 V
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 12
VIT-(UVLO2) Negative-going UVLO2 threshold voltage output side (VCC2 – GND2) 9.5 V
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 11
VHYS(UVLO2) UVLO2 Hysteresis voltage (VIT+ – VIT–) output side TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 1 V
IQ1 Input supply quiescent current 4.5 mA
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 2.8
IQ2 Output supply quiescent current 6 mA
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 3.6
LOGIC I/O
VIT+(IN,RST) Positive-going input threshold voltage (IN+, IN–, RST) 0.7 × VCC1 V
VIT-(IN,RST) Negative-going input threshold voltage (IN+, IN–, RST) 0.3 × VCC1 V
VHYS(IN,RST) Input hysteresis voltage (IN+, IN–, RST) TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 0.15 × VCC1 V
IIH High-level input leakage at (IN+)(1) IN+ = VCC1, TA = 25°C, VCC1 = 5 V,
VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
100 µA
IIL Low-level input leakage at (IN–, RST)(2) IN– = GND1, RST = GND1, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V –100 µA
IPU Pullup current of FLT, RDY V(RDY) = GND1, V(FLT) = GND1, TA = 25°C,
VCC1 = 5 V, VCC2 – GND2 = 15 V,
GND2 – VEE2 = 8 V
100 µA
VOL Low-level output voltage at FLT, RDY I(FLT) = 5 mA 0.2 V
GATE DRIVER STAGE
V(OUTPD) Active output pulldown voltage I(OUTH/L) = 200 mA, VCC2 = open 2 V
V(OUTH) High-level output voltage I(OUTH) = –20 mA VCC2 – 0.5 V
I(OUTH) = –20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V VCC2 – 0.24
V(OUTL) Low-level output voltage I(OUTL) = 20 mA VEE2 + 50 mV
I(OUTL) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V VEE2 + 13
I(OUTH) High-level output peak current IN+ = high, IN– = low, V(OUTH) = VCC2 – 15 V 1.5 A
IN+ = high, IN– = low, V(OUTH) = VCC2 – 15 V,
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
2.5
I(OUTL) Low-level output peak current IN+ = low, IN– = high, V(OUTL) = VEE2 + 15 V 3.4 A
IN+ = low, IN– = high, V(OUTL) = VEE2 + 15 V,
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
5
I(OLF) Low level output current during fault condition TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 130 mA
ACTIVE MILLER CLAMP
V(CLP) Low-level clamp voltage I(CLP) = 20 mA VEE2 + 0.08 V
I(CLP) = 20 mA, TA = 25°C, VCC1 = 5 V,
VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
VEE2 + 0.015
I(CLP) Low-level clamp current V(CLAMP) = VEE2 + 2.5 V 1.6 3.3 A
V(CLAMP) = VEE2 + 2.5 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 2.5
V(CLTH) Clamp threshold voltage 1.6 2.5 V
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 2.1
SHORT CIRCUIT CLAMPING
V(CLP_OUTH) Clamping voltage
(VOUTH – VCC2)
IN+ = high, IN– = low, tCLP = 10 µs,
I(OUTH) = 500 mA
1.1 1.3 V
IN+ = high, IN– = low, tCLP = 10 µs, I(OUTH) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
V(CLP_OUTL) Clamping voltage
(VOUTL – VCC2)
IN+ = high, IN– = low, tCLP = 10 µs,
I(OUTL) = 500 mA
1.3 1.5 V
IN+ = high, IN– = low, tCLP = 10 µs, I(OUTL) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
V(CLP_CLAMP) Clamping voltage
(VCLP – VCC2)
IN+ = high, IN– = low, tCLP = 10 µs, I(CLP) = 500 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 1.3 V
Clamping voltage at CLAMP IN+ = High, IN– = Low, I(CLP) = 20 mA 1.1 V
IN+ = High, IN– = Low, I(CLP) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V,
GND2 – VEE2 = 8 V
0.7
V(CLP_OUTL) Clamping voltage at OUTL
(VCLP - VCC2)
IN+ = High, IN– = Low, I(OUTL) = 20 mA 1.1 V
IN+ = High, IN– = Low, I(OUTL) = 20 mA, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V,
GND2 – VEE2 = 8 V
0.7
DESAT PROTECTION
I(CHG) Blanking capacitor charge current V(DESAT) – GND2 = 2 V 0.42 0.58 mA
V(DESAT) – GND2 = 2 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 0.5
I(DCHG) Blanking capacitor discharge current V(DESAT) – GND2 = 6 V 9 mA
V(DESAT) – GND2 = 6 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 14
V(DSTH) DESAT threshold voltage with respect to GND2 8.3 9.5 V
TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 9
V(DSL) DESAT voltage with respect to GND2, when OUTH/L is driven low 0.4 1 V
(1) IIH for IN–, RST pin is zero as they are pulled high internally.
(2) IIL for IN+ is zero, as it is pulled low internally.

7.10 Switching Characteristics

Over recommended operating conditions unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tr Output signal rise time, see Figure 44, Figure 45 and Figure 46 CLOAD = 1 nF 12 35 ns
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 18
tf Output signal fall time, see Figure 44, Figure 45 and Figure 46 CLOAD = 1 nF 12 37 ns
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 20
tPLH, tPHL Propagation delay, see Figure 44, Figure 45 and Figure 46 CLOAD = 1 nF 76 110 ns
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
tsk-p Pulse skew |tPHL – tPLH|, see Figure 44, Figure 45 and Figure 46 CLOAD = 1 nF 20 ns
tsk-pp Part-to-part skew, see Figure 44, Figure 45 and Figure 46 CLOAD = 1 nF 30(1) ns
tGF Glitch filter on IN+, IN–, RST, see Figure 44, Figure 45 and Figure 46 CLOAD = 1 nF 20 40 ns
CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 30
tDS (90%) DESAT sense to 90% VOUTH/L delay, see Figure 44, Figure 45 and Figure 46 CLOAD = 10 nF 760 ns
CLOAD = 10 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 553
tDS (10%) DESAT sense to 10% VOUTH/L delay, see Figure 44, Figure 45 and Figure 46 CLOAD = 10 nF 3.5 μs
CLOAD = 10 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 2
tDS (GF) DESAT glitch filter delay CLOAD = 1 nF, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 330 ns
tDS (FLT) DESAT sense to FLT-low delay, see Figure 46 1.4 μs
tLEB Leading edge blanking time, see Figure 44 and Figure 45 310 480 ns
TA = 25°C, VCC1 = 5 V,
VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V
400
tGF(RSTFLT) Glitch filter on RST for resetting FLT 300 800 ns
CI Input capacitance(2) VI = VCC1 / 2 + 0.4 × sin (2πft), f = 1 MHz, VCC1 = 5 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 2 pF
CMTI Common-mode transient immunity, see Figure 47 VCM = 1500 V 50 kV/μs
VCM = 1500 V, TA = 25°C, VCC1 = 5 V, VCC2 – GND2 = 15 V, GND2 – VEE2 = 8 V 100
(1) Measured at same supply voltage and temperature condition
(2) Measured from input pin to ground.

7.11 Insulation Characteristics Curves

ISO5452-Q1 tddb_curve.gif
TA up to 150°C Stress-voltage frequency = 60 Hz
Figure 1. Reinforced Isolation Capacitor Lifetime Projection
ISO5452-Q1 D100_SLLSEQ0.gif Figure 2. Thermal Derating Curve for Safety Limiting Current per VDE
ISO5452-Q1 D101_SLLSEQ0.gif Figure 3. Thermal Derating Curve for Safety Limiting Power per VDE

7.12 Typical Characteristics

ISO5452-Q1 D001_SLLSEQ0.gif
Figure 4. Output High Drive Current vs Temperature
ISO5452-Q1 D002_SLLSEQ0.gif
Figure 6. Output Low Drive Current vs Temperature
ISO5452-Q1 D005_SLLSEQ0.gif
Unipolar: VCC2 – VEE2 = VCC2 – GND2
Figure 8. DESAT Threshold Voltage vs Temperature
ISO5452-Q1 D003_SLLSEQ0.gif
Figure 5. Output High Drive Current vs Output Voltage
ISO5452-Q1 D004_SLLSEQ0.gif
Figure 7. Output Low Drive Current vs Output Voltage
ISO5452-Q1 G010_SLLSEQ0.gif
CL = 1 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 20 V
Figure 9. Output Transient Waveform
ISO5452-Q1 G002_SLLSEQ0.gif
CL = 100 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 20 V
Figure 11. Output Transient Waveform
ISO5452-Q1 G004_SLLSEQ0.gif
CL = 10 nF RGH = 10 Ω RGL = 5Ω
VCC2 – VEE2 = VCC2 – GND2 = 20 V
Figure 13. Output Transient Waveform
ISO5452-Q1 Figure12_Out_Tranfer_Wave_FLT_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 15 V DESAT = 220pF
Figure 15. Output Transient Waveform DESAT, RDY and FLT
ISO5452-Q1 G006_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 30 V DESAT = 220pF
Figure 17. Output Transient Waveform DESAT, RDY and FLT
ISO5452-Q1 D006_SLLSEQ0.gif
IN+ = High IN– = Low
Figure 19. ICC1 Supply Current vs Temperature
ISO5452-Q1 D008_SLLSEQ0.gif
Figure 21. ICC1 Supply Current vs Input Frequency
ISO5452-Q1 D009_SLLSEQ0.gif
No CL
Figure 23. ICC2 Supply Current vs Input Frequency
ISO5452-Q1 D012_SLLSEQ0.gif
CL = 1 nF RGH = 0 Ω RGL = 0 Ω
VCC1 = 5 V
Figure 25. Propagation Delay vs Temperature
ISO5452-Q1 D014_SLLSEQ0.gif
RGH = 10 Ω RGL = 5 Ω VCC1 = 5 V
Figure 27. Propagation Delay vs Load Capacitance
ISO5452-Q1 D016_SLLSEQ0.gif
RGH = 0 Ω RGL = 0 Ω VCC1 = 5 V
Figure 29. tf Fall Time v. Load Capacitance
ISO5452-Q1 D018_SLLSEQ0.gif
RGH = 10 Ω RGL = 5 Ω VCC1 = 5 V
Figure 31. tf Fall Time vs Load Capacitance
ISO5452-Q1 D020_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
Figure 33. DESAT Sense to VOUTH/L 10% Delay vs Temperature
ISO5452-Q1 D022_SLLSEQ0.gif
Figure 35. DESAT Sense to Fault Low Delay vs Temperature
ISO5452-Q1 D023_SLLSEQ0.gif
Figure 37. Reset to Fault Delay Across Temperature
ISO5452-Q1 D026_SLLSEQ0.gif
Figure 39. Active Pull Down Voltage vs Temperature
ISO5452-Q1 D027_SLLSEQ2.gif
Figure 41. VOUTH_CLAMP - Short Circuit Clamp Voltage on OUTH Across Temperature
ISO5452-Q1 D030_SLLSEQ0.gif
VCC2 = 15 V DESAT = 6 V
Figure 43. Blanking Capacitor Charging Current vs Temperature
ISO5452-Q1 G001_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 20 V
Figure 10. Output Transient Waveform
ISO5452-Q1 G003_SLLSEQ0.gif
CL = 1 nF RGH = 10 Ω RGL = 5Ω
VCC2 – VEE2 = VCC2 – GND2 = 20 V
Figure 12. Output Transient Waveform
ISO5452-Q1 G005_SLLSEQ0.gif
CL = 100 nF RGH = 10 Ω RGL = 5Ω
VCC2 – VEE2 = VCC2 – GND2 = 20 V
Figure 14. Output Transient Waveform
ISO5452-Q1 G007_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 15 V DESAT = 220pF
Figure 16. Output Transient Waveform DESAT, RDY and FLT
ISO5452-Q1 G008_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
VCC2 – VEE2 = VCC2 – GND2 = 30 V DESAT = 220pF
Figure 18. Output Transient Waveform DESAT, RDY and FLT
ISO5452-Q1 D007_SLLSEQ0.gif
IN+ = Low IN– = Low
Figure 20. ICC1 Supply Current vs Temperature
ISO5452-Q1 D010_SLLSEQ0.gif
Input frequency = 1 kHz
Figure 22. ICC2 Supply Current vs Temperature
ISO5452-Q1 D011_SLLSEQ0.gif
RGH = 10 Ω RGL = 5 Ω, 20 kHz
Figure 24. ICC2 Supply Current vs Load Capacitance
ISO5452-Q1 D013_SLLSEQ0.gif
CL = 1 nF RGH = 0 Ω RGL = 0 Ω
VCC2 = 15 V
Figure 26. Propagation Delay vs Temperature
ISO5452-Q1 D015_SLLSEQ0.gif
RGH = 0 Ω RGL = 0 Ω VCC1 = 5 V
Figure 28. tr Rise Time vs Load Capacitance
ISO5452-Q1 D017_SLLSEQ0.gif
RGH = 10 Ω RGL = 5 Ω VCC1 = 5 V
Figure 30. tr Rise Time vs Load Capacitance
ISO5452-Q1 D019_SLLSEQ0.gif
Figure 32. Leading Edge Blanking Time With Temperature
ISO5452-Q1 D021_SLLSEQ0.gif
CL = 10 nF RGH = 0 Ω RGL = 0 Ω
Figure 34. DESAT Sense to VOUTH/L 90% Delay vs Temperature
ISO5452-Q1 D024_SLLSEQ0.gif
Figure 36. Fault and RDY Low to RDY High Delay vs Temperature
ISO5452-Q1 D025_SLLSEQ0.gif
Figure 38. Miller Clamp Current vs Temperature
ISO5452-Q1 D029_SLLSEQ2.gif
Figure 40. VCLP_CLAMP - Short Circuit Clamp Voltage on Clamp Across Temperature
ISO5452-Q1 D028_SLLSEQ2.gif
Figure 42. VOUTL_CLAMP - Short Circuit Clamp Voltage on OUTL Across Temperature

8 Parameter Measurement Information

ISO5452-Q1 Propagation_Delay_NonInverting_Configuration_SLLSEQ0.gif Figure 44. OUTH and OUTL Propagation Delay, Noninverting Configuration
ISO5452-Q1 Propagation_Delay_Inverting_Configuration_SLLSEQ0.gif Figure 45. OUTH and OUTL Propagation Delay, Inverting Configuration
ISO5452-Q1 DESAT_OUT_FLT_RST_Delay_SLLSEQ0.gif Figure 46. DESAT, OUTH, OUTL, FLT, RST Delay
ISO5452-Q1 CMTI_test_circuit_SLLSEQ5.gif Figure 47. Common-Mode Transient Immunity Test Circuit

9 Detailed Description

9.1 Overview

The ISO5452-Q1 device is an isolated gate driver for IGBTs and MOSFETs. Input CMOS logic and output power stage are separated by a Silicon dioxide (SiO2) capacitive isolation.

The IO circuitry on the input side interfaces with a microcontroller and consists of gate-drive control and RESET (RST) inputs, READY (RDY) and FAULT (FLT) alarm outputs. The power stage consists of power transistors to supply 2.5-A pullup and 5-A pulldown currents to drive the capacitive load of the external power transistors, as well as DESAT detection circuitry to monitor IGBT collector-emitter overvoltage under short-circuit events. The capacitive isolation core consists of transmit circuitry to couple signals across the capacitive isolation barrier, and receive circuitry to convert the resulting low-swing signals into CMOS levels. The ISO5452-Q1 device also has undervoltage lockout circuitry to prevent insufficient gate drive to the external IGBT, and active output pulldown feature which ensures that the gate-driver output is held low, if the output supply voltage is absent. The ISO5452-Q1 device also has an active Miller clamp function which can be used to prevent parasitic turnon of the external power transistor, because of Miller effect, for unipolar supply operation.

9.2 Functional Block Diagram

ISO5452-Q1 FBD_SLLSEQ0.gif

9.3 Feature Description

9.3.1 Supply and Active Miller Clamp

The ISO5452-Q1 device supports both bipolar and unipolar power supply with active Miller clamp.

For operation with bipolar supplies, the IGBT is turned off with a negative voltage on the gate with respect to the emitter. This prevents the IGBT from unintentionally turning on because of current induced from the collector to the gate because Miller effect. In this condition connecting the CLAMP output of the gate driver to the IGBT gate is not necessary, but connecting the CLAMP output of the gate driver to the IGBT gate is also not an issue. Typical values of VCC2 and VEE2 for bipolar operation are 15 V and –8 V with respect to GND2.

For operation with unipolar supply, typically, VCC2 is connected to 15 V with respect to GND2, and VEE2 is connected to GND2. In this use case, the IGBT can turn on because of additional charge from IGBT Miller capacitance caused by a high-voltage slew-rate transition on the IGBT collector. To prevent IGBT from turning on, the CLAMP pin is connected to IGBT gate and Miller current is sinked through a low-impedance CLAMP transistor.

Miller CLAMP is designed for miller current up to 2 A. When the IGBT is turned off and the gate voltage transitions below 2 V and the CLAMP current output is activated.

9.3.2 Active Output Pull-down

The active output pulldown feature ensures that the IGBT gate OUTH/L is clamped to VEE2 to ensure safe IGBT off-state, when the output side is not connected to the power supply.

9.3.3 Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication Output

Undervoltage lockout (UVLO) ensures correct switching of IGBT. The IGBT is turned off, if the supply VCC1 drops below VIT-(UVLO1), irrespective of IN+, IN– and RST input until VCC1 goes above VIT+(UVLO1).

In similar manner, the IGBT is turned off if the supply VCC2 drops below VIT-(UVLO2), irrespective of IN+, IN– and RST input till VCC2 goes above VIT+(UVLO2).

The RDY pin indicates status of input and output side UVLO internal protection feature. If either side of device have insufficient supply (VCC1 or VCC2), the RDY pin output goes low; otherwise, RDY pin output is high. The RDY pin also serves as an indication to the micro-controller that the device is ready for operation.

9.3.4 Soft Turn-Off, Fault (FLT) and Reset (RST)

During IGBT overcurrent condition, a mute logic initiates a soft-turn-off procedure which disables OUTH and pulls OUTL to low over a time span of 2 μs. When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turn-off period. The FLT output condition is latched and can be reset only after RDY goes high, through a low-active pulse at the RST input. RST has an internal filter to reject noise and glitches. By asserting RST for at least the specified minimum duration (800ns), device input logic can be enabled or disabled.

9.3.5 Short Circuit Clamp

Under short-circuit events currents can be induced back into the gate-driver OUTH/L and CLAMP pins because of parasitic Miller capacitance between the IGBT collector and gate terminals. Internal protection diodes on OUTH/L and CLAMP help to sink these currents while clamping the voltages on these pins to values slightly higher than the output side supply.

9.4 Device Functional Modes

For OUTH/L of the ISO5452-Q1 device to follow IN+ in normal functional mode, the RST and RDY pins must be in the high state. Table 1 lists the device functional modes

Table 1. Function Table(1)

VCC1 VCC2 IN+ IN– RST RDY OUTH/L
PU PD X X X Low Low
PD PU X X X Low Low
PU PU X X Low High Low
PU Open X X X Low Low
PU PU Low X X High Low
PU PU X High X High Low
PU PU High Low High High High
(1) PU: Power Up (VCC1 ≥ 2.25-V, VCC2 ≥ 13-V), PD: Power Down (VCC1 ≤ 1.7-V, VCC2 ≤ 9.5-V), X: Irrelevant

 

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