SN54SC6T07-SEP Single-Event Latch-Up (SEL) Radiation Report
Abstract
The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC6T07-SEP, a radiation tolerant, hex open-drain buffer with integrated translation. Heavy-ions with an LETEFF of 43MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC6T07-SEP is SEL-free up to LETEFF = 43MeV-cm2 / mg as 125°C.
The SN54SC6T07-SEP Single-Event Latch-Up (SEL) radiation report covers the SEL performance of all four devices listed below. The SN54SC6T07-SEP device covers all functional blocks and active die area of the other three devices, which is why the device was selected for single-event effect testing for this group of voltage translation devices.
- SN54SC6T07-SEP
- SN54SC6T06-SEP
- SN54SC6T14-SEP
- SN54SC6T17-SEP
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1 Overview
The SN54SC6T07-SEP device contains six independent buffers with open-drain outputs and extended voltage operation to allow for level translation. Each buffer performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8V, 2.5V, 3.3V, and 5V CMOS levels.
The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example, 3.3V to 2.5V output).
| Description | Device Information |
|---|---|
| TI Part Number | SN54SC6T07-SEP |
| MLS Number | SN54SC6T07MPWTSEP |
| Device Function | Radiation Tolerant, Single Power Supply Hex Open Drain Buffer Voltage Translator |
| Technology | LBC9 |
| Exposure Facility | Facility for Rare Isotope Beams (FRIB) at Michigan State University FRIB Single Event Effects (FSEE) Facility |
| Heavy Ion Fluence per Run | 1 × 107 ions / cm2 |
| Irradiation Temperature | 125°C (for SEL testing) |
2 Single-Event Effects (SEE)
The primary single-event effect (SEE) event of interest in the SN54SC6T07-SEP is the destructive single-event latch-up. From a risk or impact perspective, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the Linear BiCMOS (LBC9) process used for SN54SC6T07-SEP, the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient, as the SN54SC6T07-SEP exhibited no SEL with heavy-ions up to an LETEFF of 43MeV-cm2 / mg at a fluence of 1 × 107 ions / cm2 and a chip temperature of 125°C.
Figure 2-1 Functional Block Diagram of the SN54SC6T07-SEP
