TPS54332 具有 Eco-Mode 的 3.5A、28V、1MHz 直流/直流降压转换器
- ZHCSSP5D January 2009 – September 2023 TPS54332
  
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TPS54332 具有 Eco-Mode 的 3.5A、28V、1MHz 直流/直流降压转换器

本资源的原文使用英文撰写。为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

3.5V 至 28V 输入电压范围
可调节输出电压低至 0.8V
集成式 80mΩ 高侧 MOSFET 支持高达 3.5A 的持续输出电流
使用脉冲跳跃 Eco-mode 在轻负载条件下实现高效率
固定 1MHz 开关频率
1μA 关断静态电流（典型值）
可调节慢启动限制浪涌电流
可编程 UVLO 阈值
过压瞬态保护
逐周期电流限制、频率折返和热关断保护
采用热增强型 8 引脚 SOIC PowerPAD™ 集成电路封装
为 30V 输入电压转换器使用更高频率、更低 IQ 和改进 EMI 的 TPS62933
使用 TPS54332 并借助 WEBENCH® Power Designer 创建定制设计方案

2 应用

消费类应用，例如机顶盒、CPE 设备、LCD 显示屏、外设和电池充电器
工业用和车载音频电源
5V、12V 和 24V 分布式电源系统

3 说明

TPS54332 器件是一款 28V、3.5A 非同步降压转换器，该器件集成了一个低 R_DS(on) 的高侧 MOSFET。为了提高轻负载条件下的效率，将自动激活脉冲跳跃 Eco-mode 特性。此外，1μA 的关断电源电流使得该器件适用于电池供电类应用。具有内部斜坡补偿的电流模式控制简化了外部补偿计算，并在允许使用陶瓷输出电容器的同时减少了元件数量。一个电阻分压器对输入欠压锁定的迟滞进行编程。过压瞬态保护电路可限制启动期间和瞬态条件下的电压过冲。逐周期电流限制方案、频率折返和热关断特性可在过载条件下对器件和负载施加保护。TPS54332 采用 8 引脚 SOIC PowerPAD 集成电路封装。

封装信息⁽¹⁾

器件型号	封装	封装尺寸⁽²⁾
TPS54332	DDA（SO PowerPAD，8）	4.9mm × 6mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

(2) 封装尺寸（长 × 宽）为标称值，并包括引脚（如适用）

简化原理图

效率

4 Revision History

Changes from Revision C (November 2014) to Revision D (September 2023)

更新了整个文档中的表格、图和交叉参考的编号格式Go
向特性中添加了 TPS62933 信息Go
更改了封装信息 表的列标题措辞Go
更新的商标信息Go
Moved storage temperature to the Absolute Maximum Ratings tableGo
Change table title from Handling Ratings to ESD Ratings Go
Add WEBENCH information in the Development Support sectionGo

Changes from Revision B (February 2012) to Revision C (November 2014)

添加了引脚配置和功能 部分、处理等级 表、特性说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go

Changes from Revision A (January 2013) to Revision B (February 2012)

删除了特性项：有关 SWIFT™ 文档的更多信息，请访问 TI 网站 www.ti.com/swiftGo
Changed Go
Changed Go

5 Pin Configuration and Functions

Figure 5-1 DDA Package, 8-Pin SO PowerPAD™ Integrated Circuit Package (Top View)

Table 5-1 Pin Functions

PIN		I/O	DESCRIPTION
NAME	NO.	I/O	DESCRIPTION
BOOT	1	O	A 0.1-μF bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor falls below the minimum requirement, the high-side MOSFET is forced to switch off until the capacitor is refreshed.
VIN	2	I	Input supply voltage, 3.5 V to 28 V.
EN	3	I	Enable pin. Pull below 1.25 V to disable. Float to enable. TI recommends programming the input undervoltage lockout with two resistors.
SS	4	I	Slow-start pin. An external capacitor connected to this pin sets the output rise time.
VSENSE	5	I	Inverting node of the gm error amplifier.
COMP	6	O	Error amplifier output, and input to the PWM comparator. Connect frequency compensation components to this pin.
GND	7	—	Ground
PH	8	O	The source of the internal high-side power MOSFET
PowerPAD	9	—	GND pin must be connected to the exposed pad for proper operation.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Input Voltage	VIN	–0.3	30	V
	EN	–0.3	6
	BOOT		38
	VSENSE	–0.3	3
	COMP	–0.3	3
	SS	–0.3	3
Output Voltage	BOOT-PH		8	V
	PH	–0.6	30
	PH (10-ns transient from ground to negative peak)		–5
Source Current	EN		100	μA
	BOOT		100	mA
	VSENSE		10	μA
	PH		9.25	A
Sink Current	VIN		9.25	A
	COMP		100	μA
	SS		200	μA
Operating Junction Temperature		–40	150	°C
Storage temperature		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			MIN	MAX	UNIT
V_(ESD)	Electrostatic Discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾		2	kV
V_(ESD)	Electrostatic Discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾		500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Operating Input Voltage on (VIN pin)	3.5	28	V
Operating junction temperature, T_J	–40	150	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS54332	UNIT
		HSOP
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	48.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	52.4
R_θJB	Junction-to-board thermal resistance	25.3
ψ_JT	Junction-to-top characterization parameter	8.4
ψ_JB	Junction-to-board characterization parameter	25.2
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	2.3

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

T_J = –40°C to 150°C, VIN = 3.5 V to 28 V (unless otherwise noted)

DESCRIPTION	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
Internal undervoltage lockout threshold	Rising and Falling			3.5	V
Shutdown supply current	EN = 0 V, VIN = 12 V, –40°C to 85°C		1	4	μA
Operating – non switching supply current	VSENSE = 0.85 V		82	120	μA
ENABLE AND UVLO (EN PIN)
Enable threshold	Rising and Falling		1.25	1.35	V
Input current	Enable threshold – 50 mV		-1		μA
Input current	Enable threshold + 50 mV		-4		μA
VOLTAGE REFERENCE
Voltage reference		0.772	0.8	0.828	V
HIGH-SIDE MOSFET
On resistance	BOOT-PH = 3 V, VIN = 3.5 V		115	200	mΩ
On resistance	BOOT-PH = 6 V, VIN = 12 V		80	150	mΩ
ERROR AMPLIFIER
Error amplifier transconductance (gm)	–2 μA < I_COMP < 2 μA, V(COMP) = 1 V		92		μmhos
Error amplifier DC gain⁽¹⁾	VSENSE = 0.8 V		800		V/V
Error amplifier unity gain bandwidth⁽¹⁾	5 pF capacitance from COMP to GND pins		2.7		MHz
Error amplifier source/sink current	V_(COMP) = 1.0 V, 100-mV overdrive		±7		μA
Switch current to COMP transconductance	VIN = 12 V		12		A/V
PULSE-SKIPPING ECO-MODE
Pulse-skipping Eco-mode switch current threshold			160		mA
CURRENT LIMIT
Current limit threshold	VIN = 12 V	4.2	6.5		A
THERMAL SHUTDOWN
Thermal Shutdown			165		°C
SLOW-START (SS PIN)
Charge current	V_(SS) = 0.4 V		2		μA
SS to VSENSE matching	V_(SS) = 0.4 V		10		mV

(1) Specified by design

6.6 Switching Characteristics

PARAMETERS⁽¹⁾	TEST CONDITIONS	MIN	TYP	MAX	UNIT
TPS54332 Switching Frequency	VIN = 12 V, 25°C	800	1000	1200	kHz
Minimum controllable on time	VIN = 12 V, 25°C		110	135	ns
Maximum controllable duty ratio⁽¹⁾	BOOT-PH = 6 V	90%	93%

(1) Specified by design

6.7 Typical Characteristics: Characterization Curves

Figure 6-1 On Resistance vs Junction Temperature

Figure 6-3 Switching Frequency vs Junction Temperature

Figure 6-5 Minimum Controllable on Time vs Junction Temperature

Figure 6-7 SS Charge Current vs Junction Temperature

Figure 6-2 Shutdown Quiescent Current vs Input Voltage

Figure 6-4 Voltage Reference vs Junction Temperature

Figure 6-6 Minimum Controllable Duty Ratio vs Junction Temperature

Figure 6-8 Current Limit Threshold vs Input Voltage

6.8 Typical Characteristics: Supplemental Application Curves

Figure 6-9 Typical Minimum Output Voltage vs Input Voltage

Figure 6-10 Typical Maximum Output Voltage vs Input Voltage

7 Detailed Description

7.1 Overview

The TPS54332 is a 28-V, 3.5-A, step-down (buck) converter with an integrated high-side, N-channel MOSFET. To improve performance during line and load transients, the device implements a constant-frequency, current mode control, which reduces output capacitance and simplifies external frequency compensation design. The TPS54332 has a preset switching frequency of 1 MHz.

The TPS54332 needs a minimum input voltage of 3.5 V to operate normally. The EN pin has an internal pullup current source that can be used to adjust the input voltage undervoltage lockout (UVLO) with two external resistors. In addition, the pullup current provides a default condition when the EN pin is floating for the device to operate. The operating current is 82 μA typically when not switching and under no load. When the device is disabled, the supply current is 1 μA typically.

The integrated 80-mΩ high-side MOSFET allows for high-efficiency power supply designs with continuous output currents up to 3.5 A.

The TPS54332 reduces the external component count by integrating the boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by an external capacitor on the BOOT to PH pin. The boot capacitor voltage is monitored by an UVLO circuit and turns the high-side MOSFET off when the voltage falls below a preset threshold of 2.1 V typically. The output voltage can be stepped down to as low as the reference voltage.

By adding an external capacitor, the slow-start time of the TPS54332 can be adjustable which enables flexible output filter selection.

To improve the efficiency at light load conditions, the TPS54332 enters a special pulse-skipping Eco-mode when the peak inductor current drops below 160 mA typically.

The frequency foldback reduces the switching frequency during start-up and overcurrent conditions to help control the inductor current. The thermal shutdown gives the additional protection under fault conditions.